GVT7264A16J-12 [ETC]
x16 SRAM ; X16 SRAM
| 型号： | GVT7264A16J-12 |
| 厂家： | 
ETC |
| 描述： | x16 SRAM
|
| 文件： | 总11页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH, INC.
ASYNCHRONOUS
SRAM
64K x 16 SRAM
WITH SINGLE CHIP ENABLE
REVOLUTIONARY PINOUT
FEATURES
GENERAL DESCRIPTIO N
•
•
•
•
•
•
•
•
•
•
Fast access times: 10, 12, 15and 20ns
Fast OE# access times: 5, 6, 7 and 8ns
Single +5V +10% power supply
Fully static -- no clock or timing strobes necessary
All inputs and outputs are TTL-compatible
Three state outputs
Center power and ground pins for greater noise immunity
Easy memory expansion with CE# and OE# options
Automatic CE# power down
High-performance, low-power consumption, CMOS
double-poly, double-metal process
The GVT7264A16 is organized as a 65,536 x 16 SRAM
using a four-transistor memory cell with a high performance,
silicon gate, low-power CMOS process. Galvantech SRAMs
are fabricated using double-layer polysilicon, double-layer
metal technology.
This device offers center power and ground pins for
improved performance and noise immunity. Static design
eliminates the need for external clocks or timing strobes. For
increased system flexibility and eliminating bus contention
problems, this device offers chip enable (CE#), separate byte
enable controls (BLE# and BHE#) and output enable (OE#)
with this organization.
•
Packaged in 44-pin, 400-mil SOJ and 44-pin, 400-mil
TSOP
The device offers a low power standby mode when chip
is not selected. This allows system designers to meet low
standby power requirements.
OPTIONS
•
MARKING
Timing
10ns access
12ns access
15ns access
20ns access
-10
-12
-15
-20
PIN ASSIGNMENT
44-Pin SOJ
44-Pin TSOP
1
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A4
A3
A5
A6
•
•
Packages
44-pin SOJ (400 mil)
44-pin TSOP (400 mil)
2
J
TS
3
A2
A1
A0
A7
4
OE#
BHE#
BLE#
DQ16
DQ15
DQ14
DQ13
VSS
VCC
DQ12
DQ11
DQ10
DQ9
NC
5
Power consumption
Standard
Low
6
CE#
DQ1
DQ2
DQ3
DQ4
VCC
VSS
DQ5
DQ6
DQ7
DQ8
WE#
A15
A14
A13
A12
NC
None
L
7
8
•
•
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Temperature
Commercial
Industrial
None (0°C to 70°C)
I
(-40°C to 85°C)
•
A8
A9
A10
A11
NC
Galvantech, Inc. reserves the right to chaneg
products or specifications without notic.e
Galvantech, Inc. 3080 Oakmead Village Drive, Santa Clara, CA 95051
Tel (408) 566-0688 Fax (408) 566-0699 Web Site: http://www.galvantech.com
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH,INC.
FUNCTIONAL BLOCK DIAGRAM
VCC
VSS
BLE#
DQ1
A0
DQ8
MEMORY ARRAY
512 ROWS X 128 X 16
COLUMNS
DQ9
DQ16
A15
POWER
DOWN
CE#
BHE#
WE#
COLUMN DECODER
OE#
January 22, 199 9
2
Galvantech, Inc. reserves the right to change products or specifications without not.ice
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH,INC.
TRUTH TABLE
DQ1-
DQ8
DQ9-
DQ16
MODE
CE#
WE#
OE#
BLE#
BHE#
POWE R
LOW BYTE READ (DQ1-DQ8)
HIGH BYTE READ (DQ9-DQ16)
WORD READ (DQ1-DQ16)
L
L
L
L
L
L
L
L
H
H
H
L
L
L
L
H
L
H
L
Q
HIGH-Z
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
ACTIVE
HIGH-Z
Q
L
L
Q
D
Q
HIGH-Z
D
LOW BYTE WRITE (DQ1-DQ8)
HIGH BYTE WRITE (DQ9-DQ16)
WORD WRITE (DQ1-DQ16)
X
X
X
X
H
L
H
L
L
H
L
HIGH-Z
D
L
L
D
X
H
H
X
H
X
HIGH-Z HIGH-Z
HIGH-Z HIGH-Z
OUTPUT DISABLE
STANDBY
H
X
X
X
X
HIGH-Z HIGH-Z
STANDBY
PIN DESCRIPTIONS
SOJ & TSOP
SYMBO L
TYPE
DESCRIPTIO N
Addresses Inputs: These inputs determine which cell is addressed .
Pin Number s
5, 4, 3, 2, 1, 44, 43,
42, 27, 26, 25, 24,
21, 20, 19, 18
A0-A15
Input
Input
17
WE#
CE#
Write Enable: This input determines if the cycle is a READ or WRITE cycle. WE# is LOW
for a WRITE cycle and HIGH for a READ cycle .
Input
6
Chip Enable: This active LOW input is used to enable the device. When CE# is LOW, the
chip is selected. When CE# is HIGH, the chip is disabled and automatically goes into
standby power mode.
Input
39, 40
41
BLE#, BHE#
Byte Enable: These active LOW inputs allow individual bytes to be written or read. When
BLE# is LOW, the data is written to or read from the lower byte (DQ1-DQ8). When BHE# is
LOW, the data is written to or read from the higher byte (DQ9-DQ16) .
Input
OE#
Output Enable: This active LOW input enables the output drivers .
Input/Output
7, 8, 9, 10, 13, 14,
15, 16, 29, 30, 31,
32, 35, 36, 37, 38
DQ1-DQ16
SRAM Data I/O: Data inputs and data outputs. Lower byte is DQ1-DQ8 and upper byte is
DQ9-DQ16.
11, 33
12, 34
VCC
VSS
Supply
Supply
Power Supply: 5V +10%
Ground
January 22, 199 9
3
Galvantech, Inc. reserves the right to change products or specifications without not.ice
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH,INC.
*Stresses greater than those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.This is a stress
rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
ABSOLUTE MAXIMUM RATINGS *
Voltage on VCC Supply Relative to VSS........-0.5V to +7.0V
V
..........................................................-0.5V to VCC+0.5V
IN
o
o
Storage Temperature (plastic) ..........................-55 C to +125
Junction Temperature .....................................................+125
Power Dissipation ...........................................................1.2W
Short Circuit Output Current .......................................50mA
o
DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITION S
(All Temperature Ranges; VCC = 5V +10% unless otherwise noted)
DESCRIPTIO N
CONDITION S
SYMBO L
MIN
MAX
UNITS
NOTE S
Input High (Logic 1) voltage
Input Low (Logic 0) Voltage
Input Leakage Current
VIH
VIl
2.2
-0.5
-5
VCC+1
V
V
1, 2
1, 2
0.8
5
0V < VIN < VCC
ILI
uA
uA
Output Leakage Current
Output(s) disabled,
0V < VOUT < VCC
ILO
-5
5
Output High Voltage
Output Low Voltage
Supply Voltage
IOH = -4.0mA
IOL = 8.0mA
VOH
VOL
2.4
4.5
V
V
V
1
1
1
0.4
5.5
VCC
POWER
NOTES
UNITS
DESCRIPTIO N
CONDITION S
SYM
TYP
-10
-12
-15
-20
Power Supply
Current: Operating f=fMAX; outputs open
Device selected; CE# < VIL; VCC =MAX;
Icc
120
260
240
60
220
200
55
190
170
50
150
130
45
mA
3, 14
standard
low
standard
low
TTL Standby
CE# >VIH; VCC = MAX; f=fMAX
ISB1
25
mA
mA
14
50
45
40
35
CMOS Standby
CE1# >VCC -0.2; VCC = MAX;
all other inputs < VSS +0.2 or >VCC -0.2;
all inputs static; f= 0
ISB2
0.02
standard
low
10
10
10
10
14
1.0
1.0
1.0
1.0
CAPACITANCE
DESCRIPTIO N
CONDITION S
SYMBO L
MAX
UNITS
NOTE S
Input Capacitance
TA = 25oC; f = 1 MHz
VCC = 5V
CI
6
8
pF
pF
4
4
Input/Output Capacitance (DQ)
CI/O
January 22, 199 9
4
Galvantech, Inc. reserves the right to change products or specifications without not.ice
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH,INC.
AC ELECTRICAL CHARACTERISTICS
(Note 5) (All Temperature Ranges; VCC = 5V +10%)
- 10
- 12
- 15
- 20
DESCRIPTIO N
SYM
MIN
MAX
MIN
MAX
MIN
MAX
MIN
MAN UNITS NOTES
READ Cycle
READ cycle time
tRC
tAA
tACE
tOH
tLZCE
tHZCE
tAOE
tLZOE
tHZOE
tABE
tLZBE
tHZBE
tPU
10
12
15
20
ns
ns
ns
ns
ns
Address access time
10
10
12
12
15
15
20
20
Chip Enable access time
Output hold from address change
Chip Enable to output in Low-Z
Chip disable to output in High-Z
Output Enable access time
Output Enable to output in Low-Z
Output Enable to output in High-Z
Byte Enable access time
Byte Enable to output in Low-Z
Byte disable to output in High-Z
Chip Enable to power-up time
Chip disable to power-down time
WRITE Cycle
3
3
4
4
4
4
4
4
4, 7
5
5
6
6
7
7
8
8
ns 4, 6, 7
ns
ns
0
0
0
0
5
6
6
7
7
8
8
9
ns
ns
ns
4, 6
4, 7
0
0
0
0
0
0
0
0
5
6
7
8
ns 4, 6, 7
ns
ns
4
4
tPD
10
12
15
20
WRITE cycle time
tWC
tCW
tAW
10
8
12
8
15
9
20
10
10
ns
ns
ns
Chip Enable to end of write
Address valid to end of write, with OE#
HIGH
8
8
9
Address setup time
tAS
tAH
tWP2
tWP1
tDS
0
0
0
0
0
0
0
0
ns
ns
ns
ns
ns
ns
ns
Address hold from end of write
WRITE pulse width
10
8
10
8
11
9
12
10
8
WRITE pulse width, with OE# HIGH
Data setup time
6
6
7
Data hold time
tDH
0
0
0
0
Write disable to output in Low-Z
Write Enable to output in High-Z
Byte Enable to end of write
tLZWE
tHZWE
tBW
3
4
5
5
4, 7
5
6
7
8
ns 4, 6, 7
ns
8
8
9
10
January 22, 199 9
5
Galvantech, Inc. reserves the right to change products or specifications without not.ice
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH,INC.
OUTPUT LOADS
AC TEST CONDITIONS
Q
Input pulse levels
0V to 3.0V
Z0 = 50 W
50W
Vt = 1.5V
30 pF
Input rise and fall times
Input timing reference levels
Output reference levels
Output load
1.5ns
1.5V
Fig. 1 OUTPUT LOAD EQUIVALENT
1.5V
See Figures 1 and 2
+5V
480W
Q
5 pF
255W
Fig. 2 OUTPUT LOAD EQUIVALENT
8. WE# is HIGH for READ cycle.
NOTES
9. Device is continuously selected. Chip enable and output enables
are held in their active state.
1. All voltages referenced to VSS (GND).
t
2. Overshoot:
Undershoot:
V
V
£ +7.0V for t £ RC /2.
IH
IL
t
10. Address valid prior to, or coincident with, latest occurring chip
enable.
£ -2.0V for t £ RC /2
3.
I is given with no output current.I increases with greater
cc cc
11. t
= Read Cycle Time.
output loading and faster cycle times.
RC
12. Chip Enable and Write Enable can initiate and terminate a
WRITE cycle.
4. This parameter is sampled.
5. Test conditions as specified with the output loading as shown in
Fig. 1 unless otherwise noted.
13. Capacitance derating applies to capacitance different from the
load capacitance shown in Fig. 1.
6. Output loading is specified withC =5pF as in Fig. 2. Transition
L
o
14. Typical values are measured at 5V, 25 C and 20ns cycle time.
is measured +500mV from steady state voltage.
t
7. At any given temperature and voltage condition, HZCE is less
t
t
t
than LZCE and HZWE is less than LZWE.
DATA RETENTION ELECTRICAL CHARACTERISTICS (L Version Only )
DESCRIPTIO N
CONDITION S
SYMBO L MIN
TYP
MAX
UNITS NOTE S
Vcc for Retention Data
Data Retention Current
VDR
ICCDR
ICCDR
2
V
CE# >VCC -0.2;
all other inputs < VSS +0.2
or >VCC -0.2;
Vcc = 2V
Vcc = 3V
2
3
400
600
uA
uA
13
13
all inputs static; f= 0
Chip Deselect to
Data Retention Time
tCDR
tR
0
ns
ns
4
Operation Recovery Time
tRC
4, 11
January 22, 199 9
6
Galvantech, Inc. reserves the right to change products or specifications without not.ice
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH,INC.
LOW VCC DATA RETENTION WAVEFOR M
DATA RETENTION MODE
V
4.5V
4.5V
VCC
CE#
DR
t
CDR
t
RC
V
IH
IL
V
READ CYCLE NO. 1(8, 9)
t
RC
ADDR
VALID
t
AA
t
OH
Q
PREVIOUS DATA VALID
DATA VALID
READ CYCLE NO. 2(7, 8, 10, 12)
t
RC
CE#
t
HZCE
t
ABE
t
BLE#
BHE#
t
AOE
HZBE
t
LZOE
OE#
t
LZBE
t
t
ACE
HZOE
t
LZCE
Q
HIGH Z
DATA VALID
DON'T CARE
UNDEFINED
January 22, 199 9
7
Galvantech, Inc. reserves the right to change products or specifications without not.ice
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH,INC.
WRITE CYCLE NO. 1(7, 12, 13)
(Write Enable Controlled with Output Enable OE# active LOW))
t
WC
ADDR
CE#
t
t
AW
t
AH
CW
t
BW
BLE#
BHE#
t
t
AS
WP2
WE#
t
t
DS
DH
t
D
Q
DATA VALID
HIGH Z
t
HZWE
LZWE
WRITE CYCLE NO. 2(12, 13)
(Write Enable Controlled with Output Enable OE# inactive HIG)H
t
WC
ADDR
CE#
t
t
AW
t
AH
CW
t
BW
BLE#
BHE#
t
t
AS
WP1
WE#
t
t
DS
DH
D
Q
DATA VALID
HIGH Z
DON'T CARE
UNDEFINED
January 22, 199 9
8
Galvantech, Inc. reserves the right to change products or specifications without not.ice
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH,INC.
WRITE CYCLE NO. 3(12, 13)
(Chip Enable Controlled)
t
WC
ADDR
CE#
t
t
AW
AH
t
t
AS
CW
t
BW
BLE#
BHE#
t
WP1
WE#
D
t
t
DS
DH
DATA VALID
Q
HIGH Z
DON'T CARE
WRITE CYCLE NO. 4(12, 13)
(Byte Enable Controlled)
t
WC
ADDR
t
t
AW
AH
t
t
AS
BW
BLE#
BHE#
t
CW
CE#
t
WP1
WE#
D
t
t
DS
DH
DATA VALID
Q
HIGH Z
DON'T CARE
January 22, 199 9
9
Galvantech, Inc. reserves the right to change products or specifications without not.ice
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH,INC.
Package Dimensions
44-pin 400 Mil Plastic SOJ (J)
1.129 (28.68)
1.123 (28.52)
.405 (10.29)
.395 (10.03)
.445 (11.30)
.435 (11.05)
PIN #1 INDEX
.148 (3.76)
.138 (3.51)
.050 (1.27) TYP
.030 (0.76)
MIN
.095 (2.41)
.080 (2.03)
SEATING
PLANE
.020 (0.51)
.015 (0.38)
.380 (9.65)
.360 (9.14)
MAX
MIN
Note: All dimensions in inches (millimeters)
or typical, min where noted.
44-pin 400 Mil Plastic TSOP (TS)
.741 (18.81)
.721 (18.31)
.402 (10.21)
.398 (10.11)
.467 (11.86)
.459 (11.66)
PIN #1 INDEX
.0315 (0.80) TYP
.007 (0.18)
.005 (0.12)
SEATING
PLANE
.018 (0.45)
.010 (0.25)
.032 (0.80)
.047 (1.20)
MAX
.024 (0.60)
.016 (0.40)
.008 (0.20)
.002 (0.05)
MAX
MIN
Note: All dimensions in inches (millimeters)
or typical, max where noted.
January 22, 199 9
10
Galvantech, Inc. reserves the right to change products or specifications without not.ice
Rev. 1/99
GVT7264A16
REVOLUTIONARY PINOUT 64K X 16
GALVANTECH,INC.
Ordering Information
GVT 7264A16 XX - XX X X
Galvantech Prefix
Part Number
Temperature (Blank = Commercial
I = Industrial)
Power (Blank= Standard,
L= Low Power)
Speed (10 = 10ns, 12= 12ns
15 = 15ns, 20 = 20ns)
Package (J = 400 mil SOJ,
TS = TSOP TYPE II)
January 22, 199 9
11
Galvantech, Inc. reserves the right to change products or specifications without not.ice
Rev. 1/99
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