HF42A040SCE [ETC]

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型号：	HF42A040SCE
厂家：	ETC
描述：	二极管
文件：	总1页 (文件大小：19K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Preliminary Data Sheet PD-20611 12/98

HF42A040SCE

Hexfred Die in Wafer Form

400 V

Size 42

5" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

Description

Guaranteed (Min/Max)

Test Conditions

T_J= 25°C, I_F= 60A

V_FM

Forward Voltage

1.2V Max.

400V Min.

6µA Max.

BV_R

Reverse Breakdown Voltage

Reverse Leakage Current

T_J= 25°C, I_R= 200µA

T_J= 25°C, V_R= 400V

I_RM

Mechanical Data

Nominal Back Metal Composition, Thickness

Nominal Front Metal Composition, Thickness

Chip Dimensions

Cr-Ni-Ag ( 1kA-4kA-6kA )

Ti-Ni-Ag ( 2kA-1kA-35kA )

0.1988" x 0.1988"

Wafer Diameter

125mm, with std. < 100 > flat

.015" ± .003"

Wafer Thickness

Relevant Die Mechanical Dwg. Number

MinimumStreetWidth

01-5313

100 Microns

Reject Ink Dot Size

0.25mmDiameterMinimum

Store in original container, in dessicated

nitrogen, with no contamination

Recommended Storage Environment

Reference Standard IR packaged part ( for design ) : HFA120MD40C

Die Outline

NOTES:

1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )

2. CONTROLLING DIMENSION : ( INCH )

3. DIMENSIONALTOLERANCES:

BONDING PADS : <0.635TOLERANCE=± 0.013

WIDTH

<(.0250)TOLERANCE=± (.0005)

>0.635TOLERANCE=± 0.025

>(.0250)TOLERANCE=± (.0010)

< 1.270TOLRANCE=± 0.102

< (.050) TOLERANCE = ± (.004)

>1.270 TOLERANCE=± 0.203

> (.050) TOLERANCE = ± (.008)

LENGTH

OVERALLDIE

WIDTH

LENGTH

相关型号：

HF42A040SCEPBF

Rectifier Diode, 1 Phase, 1 Element, Silicon, 5 INCH, WAFER

INFINEON

HF42A060SCE

ETC