HGT1S14N41G3VLT [ETC]

TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | 18A I(C) | TO-263AB ; 晶体管| IGBT | N -CHAN | 445V V( BR ) CES | 18A I(C ) | TO- 263AB\n
HGT1S14N41G3VLT
型号: HGT1S14N41G3VLT
厂家: ETC    ETC
描述:

TRANSISTOR | IGBT | N-CHAN | 445V V(BR)CES | 18A I(C) | TO-263AB
晶体管| IGBT | N -CHAN | 445V V( BR ) CES | 18A I(C ) | TO- 263AB\n

晶体 晶体管 双极性晶体管
文件: 总9页 (文件大小:262K)
下载:  下载PDF数据表文档文件

HGT1S15N120C3

35A, 1200V, UFS Series N-Channel IGBTs

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34 INTERSIL

HGT1S15N120C3

TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,35A I(C),TO-262AA

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0 RENESAS

HGT1S15N120C3S

35A, 1200V, UFS Series N-Channel IGBTs

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22 INTERSIL

HGT1S15N120C3S

TRANSISTOR,IGBT,N-CHAN,1.2KV V(BR)CES,35A I(C),TO-263AB

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0 RENESAS

HGT1S15N120C3S9A

35A, 1200V, N-CHANNEL IGBT, TO-263AB

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0 RENESAS

HGT1S1N120BNDS

5.3A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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26 INTERSIL

HGT1S1N120BNDS9A

TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 5.3A I(C) | TO-263AB

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20 ETC

HGT1S1N120CNDS

6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode

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14 INTERSIL

HGT1S1N120CNDS9A

TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 6.2A I(C) | TO-263AB

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26 ETC

HGT1S20N35G3VL

20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs

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27 FAIRCHILD

HGT1S20N35G3VL

20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs

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20 INTERSIL

HGT1S20N35G3VLS

20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs

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37 INTERSIL

HGT1S20N35G3VLS

20A, 350V N-Channel, Logic Level, Voltage Clamping IGBTs

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20 FAIRCHILD

HGT1S20N35G3VLS9A

TRANSISTOR | IGBT | N-CHAN | 380V V(BR)CES | 20A I(C) | TO-263AB

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19 ETC

HGT1S20N36G3VL

20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs

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27 FAIRCHILD