HTSC429.XXX-1812 [ETC]
High Temperature Silicon Capacitor; 高温硅电容
| 型号： | HTSC429.XXX-1812 |
| 厂家： | 
ETC |
| 描述： | High Temperature Silicon Capacitor |
| 文件： | 总2页 (文件大小：379K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HTSC429.xxx - 1812 High Temperature
Silicon Capacitor
Rev 2.0
Key features
Key applications
All applications up to 200°C, such as
military, aerospace and automotive
industries
High stability up to 200°C:
Temperature <±1% (-55 °C to +200 °C)
Voltage <0.1 %/V
High reliability applications
Negligible capacitance loss through aging
Replacement of X7R and C0G dielectrics
Unique high capacitance in EIA/1812 package
Decoupling / Filtering / Charge pump
(i.e.: motor management, temperature
sensors)
size, up to 3,3µF
High reliability (FIT <0.017 parts / billion hours)
Low leakage current < 3nA
Downsizing
Low ESL and Low ESR
Suitable for lead free reflow-soldering
Thanks to the unique IPDiA Silicon capacitor
technology, most of the problems encountered in
demanding applications can be solved.
The IPDiA technology offers industry leading
performances relative to Failure rate with a
FIT<0.017.
High Temperature Silicon Capacitors are
dedicated to applications where reliability up to
200°C is the main parameter.
This technology also offers high reliability, up to
10 times better than alternative capacitor
technologies, such as Tantalum or MLCC, and
eliminates cracking phenomena.
This technology features a capacitor integration
²
capability (up to 250nF/mm ) which offers
This Silicon based technology is RoHS compliant
and compatible with lead free reflow soldering
process.
capacitance value similar to X7R dielectric, but
with better electrical performances than C0G/NP0
dielectrics, up to 200°C.
HTSC provides the highest capacitor stability
over the full -55°C/+200°C temperature range in
HTSC429.xxx
Electrical specification
Capacitance value
Parameters
Capacitance range
Capacitance tolerances
Operating temperature range
Storage temperatures
Temperature coefficient
Breakdown voltage (BV)
Capacitance variation versus
RVDC
Value
1µF to 3.3µF(**)
10
22
27
33
47
±15 %(**)
1 nF
-55 °C to 200 °C
- 70 °C to 215 °C
<±1 %, from -55 °C to +200 °C
11 VDC(**)
Contact
IPDIA Sales
1µF
Contact
IPDIA Sales
2.2µF
Contact
IPDIA Sales
2.7µF
Contact
IPDIA Sales
3.3µF
10 nF
0,1 µF 935.xxx.xxx.xxx 935.xxx.xxx.xxx 935.xxx.xxx.xxx 935.132.429.733
0.1 % /V (from 0 V to RVDC)
1 µF
Max 1nH
Equivalent Serial Inductor (ESL)
Equivalent Serial Resistor (ESR)
(*) Thinner thickness (as low as 100 µm thick) available, see Low Profile Silicon Capacitor product: LPSC
(**) Other values on request.
Max 800m(**)
1G min @ 3V,25°C
100M min @ 3V,200°C
Insulation resistance
Negligible, < 0.001 % / 1000 h
Ageing
FIT<0.017 parts / billion hours,
Reliability
Capacitor height
(*)
Max 400 µm
DC Voltage stability
MLCC capacitors vs. PICS
ESL (nH) @25°C
0402 C0G(NPO) vs. PICS
10
0
1,1
1
PICS
C0G
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
C0G
X7R
Y5V
PICS
0
50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000
0
1
2
3
4
5
6
7
Capacitance (pF)
Bias voltage (V)
Fig.1 Capacitance change versus temperature
variation compared with alternative dielectrics
Fig.2 Capacitance change versus voltage
variation compared with alternative dielectrics
Fig.3 ESL versus capacitance value
compared with alternative dielectrics
Part Number
935.132.
B.2
S.
U
xx
Value (E6)
Breakdown
Voltage
4 = 11V
Unit
5 = 1n
0 = 10f
1 = 0.1p
2 = 1p
3 = 10p
4 = 0.1n
Size
9 = 1812
6 = 10n
7 = 0.1u
8 = 1u
i.e.: 3.3 µF/1812 case (HTSC type)
935.132.429.733
9 = 10u
Termination and Outline
Termination
Package outline
L
Lead-free nickel/solder coating
compatible with automatic soldering
technologies: reflow and manual
Typ.
1812
W
L
Comp. size
W
4.66 ± 0.05
Solder
Resist
IPD
component
Land
pattern
3.56 ± 0.05
Typical dimensions, all dimensions in mm
X
0.9
3.4
IPD Land
patterns size
Y
Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner. The information
presented in this document does not form part of any
quotation or contract, is believed to be accurate and reliable
and may be changed without notice. No liability will be
accepted by the publisher for any consequence of its use.
Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
For more information, please visit: http://www.ipdia.com
To contact us, email to: sales@ipdia.com
Date of release: xxxxxxxxxxxxxxxx
Document identifier: xxxxxxxxxxxxx
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