HW108C [ETC]
InSb Hall Element; 锑化铟霍尔元件
| 型号： | HW108C |
| 厂家： | 
ETC |
| 描述： | InSb Hall Element |
| 文件： | 总2页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
R : 2
50
t
o
450
in
InSb Hall Element
Please be aware that AKE products are not intended for use in life
support equipment, devices, or systems. Use of AKE products in such
applications requires the advance written approval of the appropriate
AKE officer.
Certain applications using semiconductor devices may involve potential
risks of personal injury, property damage, or loss of life. In order to
minimize these risks, adequate design and operating safeguards
should be provided by the customer to minimize inherent or procedural
hazards. Inclusion of AKE products in such applications is understood to
be fully at the risk of the customer using AKE devices or systems.
HW-108C
•High-linearity InSb Hall element.
•Super mini-mold SMT package (fits SOT 343 land pattern).
•Shipped in packet-tape reel (4000pcs per reel).
Note : It is requested to read and accept "IMPORTANT NOTICE".
•Absolute Maximum Ratings
Item
Symbol
Limit
20
Unit
mA
˚C
I
Max. Input Current
Operating Temp. Range
Storage Temp. Range
Const. Current Drive
c
T
–40 to +110
–40 to +125
opr.
T
˚C
stg.
•Classification of Output Hall Voltage (VH)
VH [ mV ]
Rank
Conditions
•Electrical Characteristics(T =25˚C)
a
Item
Symbol
Conditions
Min. Typ. Max. Unit
Q
41 to 57
B=50mT, V =IV
c
Constant Voltage Drive
Const. Voltage Drive
VH
Output Hall Voltage
41
74
mV
B=50mT, V =IV
c
R
51 to 74
R
in
B=0mT, I =0.1mA
c
Input Resistance
Output Resistance
Offset Voltage
250
250
–7
450
450
+7
R
out
B=0mT, I =0.1mA
c
•Input Current Derating Curve
V
os
B=0mT, V =IV
c
mV
Input Resistance
20
Temp. Coefficient of VH
B=50mT, I =5mA
c
VH
–1.8
–1.8
%/˚C
Temp. Coefficient of R
in
B=0mT, I =0.1mA
c
R
in
%/˚C
M
10
Dielectric Strength
100V D.C
1.0
Notes : 1. VH = VHM – Vos (VHM:meter indication)
1
VH (T3) – VH (T2)
(T3 – T2)
Rin (T3) – Rin (T2)
(T3 – T2)
2. VH
3. Rin
=
=
X
X 100
X 100
VH (T1)
1
(T ) X
Rin
1
0
–60 –40 –20
0
20
40
60
80 100 120
T1 = 20˚C, T2 = 0˚C, T3 = 40˚C
Ambient Temperature.(˚C)
•Dimensional Drawing (mm)
Note : Rin of Hall element decreases rapidly as ambient temperature
increases. Ensure compliance with input current derating curve envelope,
throughout the operating temperature range.
2.1±0.1
1.3
0.4
0.4
0.3
•Input Voltage Derating Curve
2
3
1
4
Input Resistance
R
in
: 250 to 450
0 to 0.1
2.0
1.0
0
0.1
Pinning
–60 –40 –20
0
20
40
60
80 100 120
Ambient Temperature.(˚C)
) ± (
3
Input
1(±)
2(±)
Note : For constant-voltage drive, stay within this input voltage derating
curve envelope.
) ± (
4
Output
33
HW-108C
•Characteristic Curves
R -T
in
b
c
VH-B
1600
1400
1200
1000
800
100
90
80
70
60
50
40
30
20
10
0
I
const
c
V
const
c
I
V
T
= 5 (mA)
= 1 (V)
I
c
c
c
= 25 (˚C)
a
V
in
600
400
200
0
–50
0
0
0
50
100
100
100
150
0
10
20
30
40
50
Ambient Temperature(˚C)
Magnetic Flux Density B (mT)
VH-T
VH-V , VH-Ic
c
390
300
250
200
150
100
50
I
const
const
I
const
c
c
360
330
300
270
240
210
180
150
120
90
V
V
const
c
c
I
c
I
B = 50 (mT)
= 25 (˚C)
I
V
= 5 (mA)
= 1 (V)
c
c
c
T
a
B = 50 (mT)
V
in
g
V
in
60
30
5
10
15
20
I :(mA)
c
0
0.0
0
–50
50
150
0.5
1.0
1.5
2.0
V :(V)
c
I
(mA) Input Current
Ambient Temperature(˚C)
c
V
(V) Input Voltage
c
V
-V , V -I
os c
V
-T
os
c
os
20
10
0
20
I
const
I
const
c
c
18
16
14
12
10
8
V
const
V
const
c
c
i
I
= 5 (mA)
= 1 (V)
B = 0 (mT)
= 25 (˚C)
c
V
T
c
a
B = 0 (mT)
I
c
I
c
6
4
V
in
V
in
2
I :(mA)
c
V :(V)
c
5
10
1.0
(mA) Input Current
15
20
0
0.0
–50
50
150
0.5
1.5
2.0
I
Ambient Temperature(˚C)
c
V
(V) Input Voltage
c
*Magnetic Flux Density
1(mT)=10(G)
In This Example : R =340( ), V =2.4(mV), V =
1(V)
c
in
os
34
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