HW302B [ETC]
?High-sensitivity InSb Hall element. ?Thin SIP package. ?Shipped in bulk (500pcs per pack).; ？高灵敏度InSb霍尔元件。 ？薄SIP封装。 ？装运散装（每包500个） 。
| 型号： | HW302B |
| 厂家： | 
ETC |
| 描述： | ?High-sensitivity InSb Hall element. ?Thin SIP package. ?Shipped in bulk (500pcs per pack). |
| 文件： | 总2页 (文件大小：44K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
InSb Hall Element
Please be aware that AKE products are not intended for use in life
support equipment, devices, or systems. Use of AKE products in such
applications requires the advance written approval of the appropriate
AKE officer.
Certain applications using semiconductor devices may involve potential
risks of personal injury, property damage, or loss of life. In order to
minimize these risks, adequate design and operating safeguards
should be provided by the customer to minimize inherent or procedural
hazards. Inclusion of AKE products in such applications is understood to
be fully at the risk of the customer using AKE devices or systems.
HW-302B
•High-sensitivity InSb Hall element.
•Thin SIP package.
•Shipped in bulk (500pcs per pack).
Note : It is requested to read and accept "IMPORTANT NOTICE".
•Absolute Maximum Ratings
Item
Symbol
Limit
20
Unit
mA
˚C
I
Max. Input Current
Operating Temp. Range
Storage Temp. Range
Const. Current Drive
c
T
–40 to +110
–40 to +125
opr.
T
˚C
stg.
•Classification of Output Hall Voltage (VH)
VH [ mV ]
Rank
Conditions
•Electrical Characteristics(T =25˚C)
a
A
B
C
122 to 150
144 to 174
168 to 204
Item
Symbol
Conditions
Min. Typ. Max. Unit
B=50mT, V =IV
c
Constant Voltage Drive
Const. Voltage Drive
VH
Output Hall Voltage
122
204
mV
B=50mT, V =IV
c
R
in
B=0mT, I =0.1mA
c
Input Resistance
Output Resistance
Offset Voltage
240
240
–7
550
550
+7
R
out
B=0mT, I =0.1mA
c
•Input Current Derating Curve
V
os
B=0mT, V =IV
c
mV
Input Resistance
: 240 to 550
20
R
in
Temp. Coefficient of VH
B=50mT, I =5mA
c
VH
–1.8
–1.8
%/˚C
Temp. Coefficient of R
in
B=0mT, I =0.1mA
c
R
in
%/˚C
M
10
Dielectric Strength
100V D.C
1.0
Notes : 1. VH = VHM – Vos (VHM:meter indication)
1
VH (T3) – VH (T2)
(T3 – T2)
Rin (T3) – Rin (T2)
(T3 – T2)
2. VH
3. Rin
=
=
X
X 100
X 100
VH (T1)
1
(T ) X
Rin
1
0
–40 –20
0
20
40
60
80
100 120
T1 = 20˚C, T2 = 0˚C, T3 = 40˚C
Ambient Temperature.(˚C)
•Dimensional Drawing (mm)
Note : Rin of Hall element decreases rapidly as ambient temperature
increases. Ensure compliance with input current derating curve envelope,
throughout the operating temperature range.
0
2.7±0.1
0.95
–
0.1
•Input Voltage Derating Curve
Input Resistance
: 240 to 550
2.0
R
in
0.57
0.38
0.2
0.3
0.4
1.0
1
2
3
4
Pinning
0
–40 –20
0
20
40
60
80
100 120
1.0 1.0 1.0
Ambient Temperature.(˚C)
) ± (
3
Input
1(±)
2(±)
10˚
10˚
Note : For constant-voltage drive, stay within this input voltage derating
curve envelope.
) ± (
4
Output
27
HW-302B
a
•Characteristic Curves
R -T
in
VH-B
1400
1200
1000
800
350.0
300.0
250.0
200.0
150.0
100.0
50.0
I
const
const
c
V
c
I
V
T
= 5 (mA)
= 1 (V)
= 25 (˚C)
c
c
a
I
c
V
in
600
400
200
0
d
0.0
0
–50
0
50
100
150
10
20
30
40
50
Ambient Temperature(˚C)
Magnetic Flux Density B (mT)
VH-T
VH-V , VH-Ic
c
1000
800
600
400
200
I
const
const
I
const
c
c
V
V
const
c
c
B = 50 (mT)
= 25 (˚C)
I
V
= 5 (mA)
= 1 (V)
750
500
250
0
c
c
I
c
T
a
I
c
B = 50 (mT)
V
in
V
in
5
10
15
20
I :(mA)
c
0
0
–50
0
50
100
150
0.5
1.0
1.5
2.0
V :(V)
c
I
(mA) Input Current
Ambient Temperature(˚C)
c
h
i
V
(V) Input Voltage
c
VOS-T
VOS-V , VOS-Ic
c
16.0
14.0
12.0
10.0
8.0
20
I
const
c
I
const
c
18
16
14
12
10
8
V
const
c
V
const
c
I
c
I
V
= 5 (mA)
= 1 (V)
c
B = 0 (mT)
= 25 (˚C)
c
T
a
B = 0 (mT)
I
c
6.0
6
4.0
V
in
4
V
in
2.0
2
I :(mA)
c
V :(V)
c
10
15
20
5
0.0
–50.0
0
0
0.0
50.0
100.0
150.0
0.5
1.0
1.5
2.0
Ambient Temperature(˚C)
I
(mA) Input Current
c
V
(V) Input Voltage
c
*Magnetic Flux Density
1( T)=10(G)
In This Example : R =350( ), V =1.9(mV), V =
1(V)
c
in
os
m
28
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