HWD2182 [ETC]

250mW Audio Power Amplifier with Shutdown Mode; 250mW的音频功率放大器关断模式
HWD2182
型号: HWD2182
厂家: ETC    ETC
描述:

250mW Audio Power Amplifier with Shutdown Mode
250mW的音频功率放大器关断模式

放大器 功率放大器
文件: 总12页 (文件大小:598K)
中文:  中文翻译
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HWD2182  
250mW Audio Power Amplifier with Shutdown Mode  
General Description  
Key Specifications  
The HWD2182 is a single-ended audio power amplifier ca-  
pable of delivering 250mW of continuous average power into  
an 8load with 1% THD+N from a 5V power supply.  
j
THD+N at 1kHz at 250mW  
continuous average output  
power into 8Ω  
1.0% (max)  
audio power amplifiers were designed specifically  
to provide high quality output power with a minimal amount  
of external components using surface mount packaging.  
Since the HWD2182 does not require bootstrap capacitors or  
snubber networks, it is optimally suited for low-power por-  
table systems.  
j
j
Output Power at 1% THD+N  
at 1kHz into 4Ω  
380mW (typ)  
THD+N at 1kHz at 85mW  
continuous average output  
power into 32Ω  
0.1% (typ)  
0.7µA (typ)  
The HWD2182 features an externally controlled, low power  
consumption shutdown mode which is virtually clickless and  
popless, as well as an internal thermal shutdown protection  
mechanism.  
j
Shutdown Current  
Features  
n MSOP surface mount packaging  
n “Click and Pop” Suppression Circuitry  
n Supply voltages from 2.4V–5.5V  
n Operating Temperature −40˚C to 85˚C  
n Unity-gain stable  
The unity-gain stable HWD2182 can be configured by external  
gain-setting resistors.  
n External gain configuration capability  
n No bootstrap capacitors, or snubber circuits are  
necessary  
Applications  
n Personal Computers  
n Cellular Phones  
n General Purpose Audio  
Typical Application  
Connection Diagram  
MSOP and SOIC Package  
Top View  
Order Number HWD2182MM or HWD2182M  
*Refer to the Application Information Section for information concerning  
proper selection of the input and output coupling capacitors.  
FIGURE 1. Typical Audio Amplifier Application Circuit  
1
Absolute Maximum Ratings (Note 1)  
If Military/Aerospace specified devices are required,  
please contact the CSMSC Semiconductor Sales Office/  
Distributors for availability and specifications.  
See AN-450 Surface Mounting and their Effects on  
Product Reliabilityfor other methods of soldering surface  
mount devices.  
Thermal Resistance  
θJC (MSOP)  
θJA (MSOP)  
θJC (SOP)  
θJA (SOP)  
56˚C/W  
210˚C/W  
35˚C/W  
Supply Voltage  
6.0 V  
−65˚C to +150˚C  
−0.3V to VDD + 0.3V  
Internally limited  
2000V  
Storage Temperature  
Input Voltage  
170˚C/W  
Power Dissipation (Note 3)  
ESD Susceptibility (Note 4)  
PIn 5  
Operating Ratings  
1500V  
Temperature Range  
Junction Temperature  
150˚C  
TMIN TA TMAX  
−40˚C TA 85˚C  
2.4V VDD 5.5V  
Soldering Information  
Small Outline Package  
Supply Voltage  
Vapor Phase (60 seconds)  
Infrared (15 seconds)  
215˚C  
220˚C  
Electrical Characteristics (Notes 1, 2)  
The following specifications apply for VDD = 5V unless otherwise specified. Limits apply for TA = 25˚C.  
HWD2182  
Typical Limit  
Units  
(Limits)  
Symbol  
Parameter  
Conditions  
(Note 5)  
(Note 6)  
IDD  
Quiescent Current  
VIN = 0V, IO = 0A  
2
0.5  
5
4.0  
5
mA (max)  
µA (max)  
mV (max)  
ISD  
Shutdown Current  
Offset Voltage  
Output Power  
Vpin1 = VDD  
VOS  
P O  
VIN = 0V  
50  
THD + N = 1% (max); f = 1 kHz;  
RL = 4Ω  
380  
270  
95  
mW  
mW (min)  
mW  
RL = 8Ω  
250  
RL = 32Ω  
THD + N = 10%; f = 1 kHz  
RL = 4Ω  
480  
325  
125  
0.5  
mW  
mW  
mW  
%
RL = 8Ω  
RL = 32Ω  
THD + N  
PSRR  
Total Harmonic Distortion + Noise  
Power Supply Rejection Ratio  
RL = 8, P = 250 mWrms;  
O
RL = 32, PO = 85 mWrms;  
0.1  
%
f = 1 kHz  
Vpin3 = 2.5V, V  
f = 120 Hz  
= 200 mVrms,  
ripple  
50  
dB  
Electrical Characteristics (Notes 1, 2)  
The following specifications apply for VDD = 3V unless otherwise specified. Limits apply for TA = 25˚C.  
HWD2182  
Units  
(Limits)  
Symbol  
Parameter  
Conditions  
Typical  
Limit  
(Note 5)  
(Note 6)  
IDD  
Quiescent Current  
VIN = 0V, IO = 0A  
1.2  
0.3  
5
mA  
µA  
ISD  
Shutdown Current  
Offset Voltage  
Output Power  
Vpin1 = VDD  
VOS  
P O  
VIN = 0V  
mV  
THD + N = 1% (max); f = 1 kHz  
RL = 8Ω  
80  
30  
mW  
mW  
RL = 32Ω  
THD + N = 10%; f = 1 kHz  
RL = 8Ω  
105  
40  
mW  
mW  
RL = 32Ω  
2
Electrical Characteristics (Notes 1, 2) (Continued)  
The following specifications apply for VDD = 3V unless otherwise specified. Limits apply for TA = 25˚C.  
HWD2182  
Units  
(Limits)  
Symbol  
Parameter  
Conditions  
Typical  
Limit  
(Note 6)  
(Note 5)  
THD + N  
Total Harmonic Distortion + Noise  
RL = 8, P = 70 mWrms;  
0.25  
%
%
O
RL = 32, PO = 30 mWrms;  
0.3  
f = 1 kHz  
PSRR  
Power Supply Rejection Ratio  
Vpin3 = 2.5V, V  
f = 120 Hz  
= 200 mVrms,  
ripple  
50  
dB  
Note 1: All voltages are measured with respect to the ground pin, unless otherwise specified.  
Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-  
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular test conditions which guar-  
antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is  
given, however, the typical value is a good indication of device performance.  
Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by T  
, θ , and the ambient temperature T . The maximum  
A
JMAX JA  
allowable power dissipation is P  
= (T  
− T )/θ . For the HWD2182, T  
= 150˚C, and the typical junction-to-ambient thermal resistance, when board  
JMAX  
DMAX  
JMAX  
A
JA  
mounted, is 210˚C/W for the MUA08A Package and 170˚C/W for the M08A Package.  
Note 4: Human body model, 100 pF discharged through a 1.5 kresistor.  
Note 5: Typicals are measured at 25˚C and represent the parametric norm.  
External Components Description  
(Refer to Figure 1)  
Components  
Functional Description  
1. Ri  
Inverting input resistance which sets the closed-loop gain in conjunction with Rf. This resistor also forms a  
high pass filter with Ci at fc = 1 / (2πRiCi).  
2. Ci  
Input coupling capacitor which blocks the DC voltage at the amplifier’s input terminals. Also creates a  
highpass filter with Ri at fc = 1 / (2πRiC ). Refer to the section, Proper Selection of External Components,  
i
for an explanation of how to determine the values of Ci.  
3. Rf  
Feedback resistance which sets closed-loop gain in conjunction with Ri.  
4. CS  
Supply bypass capacitor which provides power supply filtering. Refer to the Application Information section  
for proper placement and selection of the supply bypass capacitor.  
5. CB  
6. CO  
Bypass pin capacitor which provides half-supply filtering. Refer to the section, Proper Selection of External  
Components, for information concerning proper placement and selection of CB.  
Output coupling capacitor which blocks the DC voltage at the amplifier’s output. Forms a high pass filter wth  
RL at fO = 1 / (2πRLC O).  
Typical Performance Characteristics  
THD+N vs Frequency  
THD+N vs Frequency  
THD+N vs Frequency  
3
Typical Performance Characteristics (Continued)  
THD+N vs Frequency  
THD+N vs Frequency  
THD+N vs Frequency  
THD+N vs Frequency  
THD+N vs Frequency  
THD+N vs  
Output Power  
THD+N vs  
Output Power  
THD+N vs  
Output Power  
4
Typical Performance Characteristics (Continued)  
THD+N vs  
Output Power  
THD+N vs  
Output Power  
THD+N vs  
Output Power  
THD+N vs  
Output Power  
THD+N vs  
Output Power  
Output Power vs  
Supply Voltage  
Output Power vs  
Supply Voltage  
Output Power vs  
Supply Voltage  
5
Typical Performance Characteristics (Continued)  
Dropout Voltage vs  
Supply Voltage  
Dropout Voltage vs  
Supply Voltage  
Power Supply  
Rejection Ratio  
Output Power vs  
Load Resistance  
Power Dissipation vs  
Output Power  
Supply Current vs  
Supply Voltage  
6
Typical Performance Characteristics (Continued)  
Open Loop  
Frequency Response  
Output Attenuation in  
Shutdown Mode  
Noise Floor  
Frequency Response  
vs Output Capacitor Size  
Frequency Response  
vs Output Capacitor Size  
Frequency Response  
vs Input Capacitor Size  
Typical Application  
Frequency Response  
Typical Application  
Frequency Response  
Power Derating Curve  
7
displayed in the Typical Performance Characteristics sec-  
tion, the effect of a larger half supply bypass capacitor is im-  
proved low frequency PSRR due to increased half-supply  
stability. Typical applications employ a 5V regulator with  
10 µF and a 0.1 µF bypass capacitors which aid in supply  
stability, but do not eliminate the need for bypassing the sup-  
ply nodes of the HWD2182. The selection of bypass capaci-  
tors, especially CB, is thus dependent upon desired low fre-  
quency PSRR, click and pop performance as explained in  
the section, Proper Selection of External Components  
section, system cost, and size constraints.  
Application Information  
SHUTDOWN FUNCTION  
In order to reduce power consumption while not in use, the  
HWD2182 contains a shutdown pin to externally turn off the  
amplifier’s bias circuitry. This shutdown features turns the  
amplifier off when a logic high is placed on the shutdown pin.  
The trigger point between a logic low and logic high level is  
typically half supply. It is best to switch between ground and  
supply to provide maximum device performance. By switch-  
ing the shutdown pin to the VDD, the HWD2182 supply current  
draw will be minimized in idle mode. While the device will be  
disabled with shutdown pin voltages less than V DD, the idle  
current may be greater than the typical value of 0.5 µA. In ei-  
ther case, the shutdown pin should be tied to a definite volt-  
age because leaving the pin floating may result in an un-  
PROPER SELECTION OF EXTERNAL COMPONENTS  
Selection of external components when using integrated  
power amplifiers is critical to optimize device and system  
performance. While the HWD2182 is tolerant of external com-  
ponent combinations, consideration to component values  
must be used to maximize overall system quality.  
wanted shutdown condition. In many applications,  
a
microcontroller or microprocessor output is used to control  
the shutdown circuitry which provides a quick smooth transi-  
tion into shutdown. Another solution is to use a single-pole,  
single-throw switch in conjunction with an external pull-up re-  
sistor. When the switch is closed, the shutdown pin is con-  
nected to ground and enables the amplifier. If the switch is  
open, then the external pull-up resistor will disable the  
HWD2182. This scheme guarantees that the shutdown pin will  
not float which will prevent unwanted state changes.  
The HWD2182 is unity gain stable and this gives a designer  
maximum system flexibility. The HWD2182 should be used in  
low gain configurations to minimize THD+N values, and  
maximize the signal to noise ratio. Low gain configuartions  
require large input signals to obtain a given output power. In-  
put signals equal to or greater than 1 Vrms are available  
from sources such as audio codecs. Please refer to the sec-  
tion, Audio Power Amplifier Design, for a more complete  
explanation of proper gain selection.  
POWER DISSIPATION  
Besides gain, one of the major considerations is the closed  
loop bandwidth of the amplifier. To a large extent, the band-  
width is dictated by the choice of external components  
shown in Figure 1. Both the input coupling capacitor, Ci, and  
the output coupling capacitor, Co, form first order high pass  
filters which limit low frequency response. These values  
should be chosen based on needed frequency response for  
a few distinct reasons.  
Power dissipation is a major concern when using any power  
amplifier and must be thoroughly understood to ensure a  
successful design. Equation 1 states the maximum power  
dissipation point for a single-ended amplifier operating at a  
given supply voltage and driving a specified output load.  
PDMAX = (VDD  
)
2/(2π2RL)  
(1)  
Even with this internal power dissipation, the HWD2182 does  
not require heat sinking over a large range of ambient tem-  
perature. From Equation 1, assuming a 5V power supply and  
an 4load, the maximum power dissipation point is  
316 mW. The maximum power dissipation point obtained  
must not be greater than the power dissipation that results  
from Equation 2:  
CLICK AND POP CIRCUITRY  
The HWD2182 contains circuitry to minimize turn-on and turn-  
off transients or “clicks and pops.” In this case, turn-on refers  
to either power supply turn-on or the device coming out of  
shutdown mode. When the device is turning on, the amplifi-  
ers are internally muted. An internal current source ramps up  
the voltage of the bypass pin. Both the inputs and outputs  
track the voltage at the bypass pin. The device will remain  
muted until the bypass pin has reached its half supply volt-  
age, 1/2 VDD. As soon as the bypass node is stable, the de-  
vice will become fully operational, where the gain is set by  
the external resistors.  
PDMAX = (TJMAX−T A)/θJA  
(2)  
For the HWD2182 surface mount package, θ = 210˚C/W and  
JA  
TJMAX = 150˚C. Depending on the ambient temperature, TA,  
of the system surroundings, Equation 2 can be used to find  
the maximum internal power dissipation supported by the IC  
packaging. If the result of Equation 1 is greater than that of  
Equation 2, then either the supply voltage must be de-  
creased, the load impedance increased or T A reduced. For  
the typical application of a 5V power supply, with an 4load,  
the maximum ambient temperature possible without violating  
the maximum junction temperature is approximately 83˚C  
provided that device operation is around the maximum  
power dissipation point. Power dissipation is a function of  
output power and thus, if typical operation is not around the  
maximum power dissipation point, the ambient temperature  
may be increased accordingly. Refer to the Typical Perfor-  
mance Characteristics curves for power dissipation infor-  
mation for lower output powers.  
Although the bypass pin current source cannot be modified,  
the size of CB can be changed to alter the device turn-on  
time and the level of “clicks and pops.” By increasing the  
value of C B, the level of turn-on pop can be reduced. How-  
ever, the tradeoff for using a larger bypass capacitor is an in-  
crease in turn-on time for the device. There is a linear rela-  
tionship between the size of CB and the turn-on time. Here  
are some typical turn-on times for a given CB:  
CB  
TON  
0.01 µF  
0.1 µF  
0.22 µF  
0.47 µF  
20 ms  
200 ms  
420 ms  
900 ms  
POWER SUPPLY BYPASSING  
As with any power amplifier, proper supply bypassing is criti-  
cal for low noise performance and high power supply rejec-  
tion. The capacitor location on both the bypass and power  
supply pins should be as close to the device as possible. As  
In order to eliminate “clicks and pops,” all capacitors must be  
discharged before turn-on. Rapid on/off switching of the de-  
8
Extra supply voltage creates headroom that allows the  
HWD2182 to reproduce peaks in excess of 300 mW without  
clipping the signal. At this time, the designer must make sure  
that the power supply choice along with the output imped-  
ance does not violate the conditions explained in the Power  
Dissipation section.  
Application Information (Continued)  
vice or the shutdown function may cause the “click and pop”  
circuitry to not operate fully, resulting in increased “click and  
pop” noise.  
The value of Ci will also reflect turn-on pops. Clearly, a cer-  
tain size for Ci is needed to couple in low frequencies without  
excessive attenuation. But in many cases, the speakers  
used in portable systems have little ability to reproduce sig-  
nals below 100 Hz to 150 Hz. In this case, using a large input  
and output coupling capacitor may not increase system per-  
formance. In most cases, choosing a small value of Ci in the  
range of 0.1 µF to 0.33 µF, along with CB equal to 1.0 µF  
should produce a virtually clickless and popless turn-on. In  
Once the power dissipation equations have been addressed,  
the required gain can be determined from Equation 4.  
(4)  
AV = Rf / Ri  
(5)  
From Equation 4, the minimum gain is:  
AV = 1.4  
cases where C is larger than 0.33 µF, it may be advanta-  
i
Since the desired input impedance was 20 k, and with a  
gain of 1.4, a value of 28 kis designated for Rf, assuming  
5% tolerance resistors. This combination results in a nominal  
gain of 1.4. The final design step is to address the bandwidth  
requirements which must be stated as a pair of −3 dB fre-  
quency points. Five times away from a −3 dB point is 0.17 dB  
down from passband response assuming a single pole roll-  
off. As stated in the External Components section, both Ri  
in conjunction with C i, and Co with RL, create first order high-  
pass filters. Thus to obtain the desired frequency low re-  
geous to increase the value of CB. Again, it should be under-  
stood that increasing the value of CB will reduce the “clicks  
and pops” at the expense of a longer device turn-on time.  
AUDIO POWER AMPLIFIER DESIGN  
Design a 250 mW/8Audio Amplifier  
Given:  
Power Output  
Load Impedance  
Input Level  
250 mWrms  
8Ω  
±
sponse of 100 Hz within 0.5 dB, both poles must be taken  
into consideration. The combination of two single order filters  
at the same frequency forms a second order response. This  
results in a signal which is down 0.34 dB at five times away  
from the single order filter −3 dB point. Thus, a frequency of  
20 Hz is used in the following equations to ensure that the re-  
sponse is better than 0.5 dB down at 100 Hz.  
1 Vrms (max)  
20 kΩ  
Input Impedance  
Bandwidth  
±
100 Hz–20 kHz 0.50 dB  
A designer must first determine the needed supply rail to ob-  
tain the specified output power. Calculating the required sup-  
ply rail involves knowing two parameters, VOPEAK and also  
the dropout voltage. The latter is typically 530mV and can be  
found from the graphs in the Typical Performance Charac-  
teristics. VOPEAK can be determined from Equation 3.  
Ci 1 / (2π * 20 k* 20 Hz) = 0.397 µF; use 0.39 µF.  
Co 1 / (2π * 8* 20 Hz) = 995 µF; use 1000 µF.  
The high frequency pole is determined by the product of the  
desired high frequency pole, fH, and the closed-loop gain, A  
V
. With a closed-loop gain of 1.4 and fH = 100 kHz, the result-  
ing GBWP = 140 kHz which is much smaller than the  
HWD2182 GBWP of 12.5Mhz. This figure displays that if a de-  
signer has a need to design an amplifier with a higher gain,  
the HWD2182 can still be used without running into bandwidth  
limitations.  
(3)  
For 250 mW of output power into an 8load, the required  
VOPEAK is 2 volts. A minimum supply rail of 4.55V results  
from adding VOPEAK and VOD. Since 5V is a standard supply  
voltage in most applications, it is chosen for the supply rail.  
9
Physical Dimensions inches (millimeters) unless otherwise noted  
Order Number HWD2182  
10  
Physical Dimensions inches (millimeters) unless otherwise noted (Continued)  
Order Number HWD2182  
11  
Chengdu Sino Microelectronics System Co.,Ltd  
(Http://www.csmsc.com)  
Headquarters of CSMSC:  
Beijing Office:  
Address: 2nd floor, Building D,  
Science & Technology  
Industrial Park, 11 Gaopeng  
Avenue, Chengdu High-Tech  
Zone,Chengdu City, Sichuan  
Province, P.R.China  
Address: Room 505, No. 6 Building,  
Zijin Garden, 68 Wanquanhe  
Rd., Haidian District,  
Beijing, P.R.China  
PC: 100000  
Tel: +86-10-8265-8662  
Fax: +86-10-8265-86  
PC: 610041  
Tel: +86-28-8517-7737  
Fax: +86-28-8517-5097  
Shenzhen Office:  
Address: Room 1015, Building B,  
Zhongshen Garden,  
Caitian Rd, Futian District,  
Shenzhen, P.R.China  
PC: 518000  
Tel : +86-775-8299-5149  
+86-775-8299-5147  
+86-775-8299-6144  
Fax: +86-775-8299-6142  

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