HZCSERIES [ETC]
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| 型号： | HZCSERIES |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总6页 (文件大小：33K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
HZC Series
Silicon Epitaxial Planar Zener Diode for Surge Absorb
ADE-208-1436A (Z)
Rev.1
Jan. 2002
Features
•
•
These diodes are delivered taped.
Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HZC Series
Let to Mark Code
UFP
Pin Arrangement
Cathode mark
Mark
1
2
51
1. Cathode
2. Anode
HZC Series
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Pd *1
Tj
Value
150
Unit
mW
°C
Power dissipation
Junction temperature
Storage temperature
Note: 1. See Fig2.
150
Tstg
–55 to +150
°C
Electrical Characteristics
(Ta = 25°C)
Zener voltage
Test
Reverse current
Test
Condition rd (Ω)
Dynamic resistance ESD-Capability *2
Test
VZ (V)*1
Condition IR (µA)
Condition
— (kV)*2
Min
30
Type
Min
Max
2.20
2.40
2.60
2.90
3.20
3.50
3.80
4.10
4.48
4.90
5.37
5.92
6.53
7.14
7.84
8.64
9.55
10.55
11.56
IZ (mA)
Max
120.0
120.0
120.0
120.0
50.0
20.0
10.0
10.0
10.0
10.0
5.0
VR (V)
0.5
0.7
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.5
3.0
3.5
4.0
5.0
6.0
7.0
8.0
Max
100
100
100
110
120
130
130
130
130
130
130
80
IZ (mA)
HZC2.0
HZC2.2
HZC2.4
HZC2.7
HZC3.0
HZC3.3
HZC3.6
HZC3.9
HZC4.3
HZC4.7
HZC5.1
HZC5.6
HZC6.2
HZC6.8
HZC7.5
HZC8.2
HZC9.1
HZC10
HZC11
1.90
2.10
2.30
2.50
2.80
3.10
3.40
3.70
4.01
4.42
4.84
5.31
5.86
6.47
7.06
7.76
8.56
9.45
10.44
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
30
30
30
30
30
30
30
30
30
30
5.0
30
2.0
50
30
1.0
30
30
1.0
30
30
0.5
30
30
0.5
30
30
0.5
30
30
0.5
30
30
Notes: 1. Tested with pulse (Pw = 40 ms).
2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse
Failure criterion ; According to IR spec
Rev.1, Jan. 2002, page 2 of 6
HZC Series
Zener voltage
Reverse current
Test
Dynamic resistance ESD-Capability *2
Test
Test
VZ (V)*1
Condition IR (µA)
Condition rd (Ω)
Condition
— (kV)*2
Min
30
Type
Min
Max
IZ (mA)
Max
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
VR (V)
9.0
Max
35
35
40
40
45
50
55
60
70
80
80
90
IZ (mA)
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
HZC24
HZC27
HZC30
HZC33
HZC36
11.42
12.47
13.84
15.37
16.94
18.86
20.88
22.93
25.10
28.00
31.00
34.00
12.60
13.96
15.52
17.09
19.03
21.08
23.17
25.57
28.90
32.00
35.00
38.00
5
5
5
5
5
5
5
5
2
2
2
2
5
5
5
5
5
5
5
5
2
2
2
2
10.0
11.0
12.0
13.0
15.0
17.0
19.0
21.0
23.0
25.0
27.0
30
30
30
30
30
30
30
30
30
25
20
Notes: 1. Tested with pulse (Pw = 40 ms).
2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse
Failure criterion ; According to IR spec
Mark Code
Type
Mark No.
20
Type
Mark No.
56
Type
Mark No.
15 *
HZC2.0
HZC2.2
HZC2.4
HZC2.7
HZC3.0
HZC3.3
HZC3.6
HZC3.9
HZC4.3
HZC4.7
HZC5.1
HZC5.6
HZC6.2
HZC6.8
HZC7.5
HZC8.2
HZC9.1
HZC10
HZC11
HZC12
HZC13
HZC15
HZC16
HZC18
HZC20
HZC22
HZC24
HZC27
HZC30
HZC33
HZC36
22
62
16 *
24
68
18 *
27
75
20 *
30
82
22 *
33
91
24 *
36
10 *
11 *
12 *
13 *
27 *
39
30 *
43
33 *
47
36 *
51
Note: 1. HZC10 To HZC36 has ■, on the right of Laser Mark.
Rev.1, Jan. 2002, page 3 of 6
HZC Series
Main Characteristic
10
8
6
4
2
0
0
4
8
12
16
20
24
28
32
36
40
Zener Voltage VZ (V)
Fig.1 Zener current vs. Zener voltage
250
0.10
0.09
Polyimide board
%/°C
20h×15w×0.8t
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
40
35
30
25
20
15
10
5
0
−5
1.5
200
mV/°C
150
1.5
unit: mm
100
50
0
−0.01
−0.02
−10
−15
−20
−25
−0.03
−0.04
−0.05
−0.06
0
5
10 15 20 25 30 35 40 45
Zener Voltage VZ (V)
0
50
Ambient Temperature Ta (°C)
Fig.2 Power Dissipation vs. Ambient Temperature
100
150
200
Fig.2 Temperature Coefficient vs. Zener voltage
Rev.1, Jan. 2002, page 4 of 6
HZC Series
Package Dimensions
As of July, 2001
Unit: mm
1.2 ± 0.10
1.6 ± 0.10
Hitachi Code
JEDEC
UFP
—
JEITA
Mass (reference value)
Conforms
0.0016 g
Rev.1, Jan. 2002, page 5 of 6
HZC Series
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 5.0
Rev.1, Jan. 2002, page 6 of 6
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