ILQ3-2 [ETC]
DARLINGTON-NPN-OUTPUT DC-INPUT OPTOCOUPLER ; 达林顿NPN输出DC- INPUT光电耦合器\n
| 型号： | ILQ3-2 |
| 厂家： | 
ETC |
| 描述： | DARLINGTON-NPN-OUTPUT DC-INPUT OPTOCOUPLER
|
| 文件： | 总2页 (文件大小：369K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DUAL CHANNEL ILD3
QUAD CHANNEL ILQ3
Phototransistor
Optocoupler
FEATURES
Dimensions in Inches (mm)
• Current Transfer Ratio at I =1.6 mA, 300% Min.
• High Collector-Emitter Voltage
F
Dual Channel
pin one ID
• BV
=50 V
CEO
4
5
3
6
1
8
Anode
Cathode
Cathode
Anode
1
2
3
4
8
7
6
5
Emitter
2
7
• Field-Effect Stable by TRansparent IOn Shield
(TRIOS)
• Double Molded Package Offers Isolation Test
.255 (6.48)
.268 (6.81)
Collector
Collector
Emitter
Voltage 5300 V
, 1.0 sec.
RMS
• Underwriters Lab File #E52744
.379 (9.63)
.390 (9.91)
Maximum Ratings (Each Channel)
Emitter
.030 (0.76)
.045 (1.14)
.300 (7.62)
typ.
.031 (0.79)
4° typ.
Reverse Voltage ...................................................6.0 V
Continuous Forward Current ............................. 60 mA
Surge Current...................................................... 2.5 A
Power Dissipation............................................100 mW
Derate Linearly from 25°C...........................1.3 mW/°C
Detector
.130 (3.30)
.150 (3.81)
.230(5.84)
.250(6.35)
.050 (1.27)
10°
.110 (2.79)
.130 (3.30)
.020 (.51 )
.035 (.89 )
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.100 (2.54) typ.
Collector-Emitter Reverse Voltage.........................50 V
Collector Current ............................................... 50 mA
Collector Current (t<1.0 ms)............................ 400 mA
Total Power Dissipation ...................................200 mW
Derate Linearly from 25°C...........................2.6 mW/°C
Package
Anode
Cathode
Cathode
1
2
3
4
5
6
16 Emitter
15 Collector
14 Collector
13 Emitter
12 Emitter
11 Collector
Quad Channel
pin one ID
Anode
Anode
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
Isolation Test Voltage (between emitter
and detector, refer to standard climate
Cathode
Cathode
Anode
9
10 11 12 13 14 15 16
Collector
Emitter
7
10
9
23°C/50% RH, DIN50014) t=1 sec......... 5300 V
RMS
8
.779 (19.77 )
.790 (20.07)
Creepage ...................................................... ≥7.0 mm
Clearance...................................................... ≥7.0 mm
.300 (7.62)
typ.
.030 (.76)
.045 (1.14)
Isolation Resistance
.031(.79)
12
V =500 V, T =25°C............................... R =10
Ω
Ω
IO
A
IO
.130 (3.30)
.150 (3.81)
11
.110 (2.79)
.130 (3.30)
V =500 V, T =100°C............................. R =10
IO
A
IO
.230 (5.84)
.250 (6.35)
10°
typ.
Power Dissipation............................................250 mW
Derate Linearly from 25°C...........................3.3 mW/°C
Storage Temperature Range .................–40 to +150°C
Operating Temperature Range..............–40 to +100°C
Junction Temperature.........................................100°C
Soldering Temperature,
4°
.020(.51)
.035 (.89)
3°–9°
.018 (.46)
.022 (.56)
.008 (.20)
.012 (.30)
.100 (2.54)typ.
.050 (1.27)
DESCRIPTION
2.0 mm from case bottom...............................260°C
The ILD/Q3 are optically coupled isolated pairs employing GaAs infra-
red LEDs and silicon NPN phototransistor. Signal information, including
a DC level, can be transmitted by the drive while maintaining a high
degree of electrical isolation between input and output. The ILD/Q3 are
especially designed for driving medium-speed logic and can be used
to eliminate troublesome ground loop and noise problems. Also these
couplers can be used to replace relays and transformers in many digi-
tal interface applications such as CRT modulation. The ILD3 has two
isolated channels in a single DIP package and the ILQ3 has four iso-
lated channels per package.
See Appnote 45, “How to Use Optocoupler Normalized Curves”.
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
2–177
March 8, 2000-01
Characteristics
Emitter (IR GaAs)
Symbol
Min.
—
Typ.
1.25
0.01
25
Max.
1.65
10
Unit
V
Test Condition
Forward Voltage
I =60 mA
V
F
F
Reverse Current
—
µA
pF
V =6.0 V
I
R
R
Capacitance
C0
—
—
V =0 V, f=1.0 MHz
R
Thermal Resistance, Junction to Lead
Detector
RTHJL
—
750
—
K/W
—
Collector-Emitter Leakage Current
Capacitance
ICEO
CCE
—
—
—
5.0
6.8
500
70
—
—
nA
V
V
=15 V
CE
pF
=5.0 V, f=1.0 MHz
CE
Thermal Resistance, Junction to Lead
Package Transfer Characteristics (Each Channel)
Saturated Current Transfer Ratio, ILD/Q3-1
Saturated Current Transfer Ratio, ILD/Q3-2
Common Mode Rejection Output High
RTHJL
K/W
—
CTR
CTR
300
100
—
—
—
—
—
%
I =1.6 mA, V =0.4 V
F CE
SAT
SAT
—
%
I =1.0 mA, V =0.4 V
F
CE
CMH
5000
V/µs
V
F
=50 V , R =10 kΩ,
CM P-P L
I =0 mA
Common Mode Rejection Output Low
CML
—
5000
—
V/µs
V
F
=50 V , R =10 kΩ,
CM P-P L
I =0 mA
Common Mode Coupling Capacitance
Package Capacitance
—
—
0.01
0.8
—
—
pF
pF
—
C
C
CM
IO
V
=0 V, f=1.0 MHz
IO
2001 Infineon Technologies Corp. • Optoelectronics Division • San Jose, CA
www.infineon.com/opto • 1-888-Infineon (1-888-463-4636)
ILD/Q3
March 8, 2000-01
2–178
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