IPD2548 [ETC]
Optoelectronic ; 光电\n
| 型号： | IPD2548 |
| 厂家： | 
ETC |
| 描述： | Optoelectronic
|
| 文件： | 总8页 (文件大小：956K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Powered by ICminer.com Electronic-Library Service CopyRight 2003
Powered by ICminer.com Electronic-Library Service CopyRight 2003
Powered by ICminer.com Electronic-Library Service CopyRight 2003
Powered by ICminer.com Electronic-Library Service CopyRight 2003
Powered by ICminer.com Electronic-Library Service CopyRight 2003
Powered by ICminer.com Electronic-Library Service CopyRight 2003
Powered by ICminer.com Electronic-Library Service CopyRight 2003
Powered by ICminer.com Electronic-Library Service CopyRight 2003
相关型号：
IPD25CN10N G
英飞凌的 100V OptiMOS™ 功率 MOSFET 可以为高效率、高功率密度的 SMPS 提供卓越的解决方案。与下一代出色技术相比，该系列在 R Ds（on）和 FOM（品质因数）方面均降低了30％。
INFINEON
IPD25DP06NM
OptiMOS™ P-channel MOSFETs 60V in DPAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-channel device is the reduction of design complexity in medium and low power applications. Its easy interface to MCU, fast switching as well as avalanche ruggedness makes it suitable for high quality demanding applications. It is available in normal and logic level featuring a wide RDS(on) range and improves efficiency at low loads due to low Qg.
INFINEON
IPD25N06S240ATMA1
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
INFINEON
IPD25N06S240ATMA2
Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
INFINEON
IPD26N06S2L35ATMA1
Power Field-Effect Transistor, 30A I(D), 55V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
INFINEON
©2020 ICPDF网 联系我们和版权申明