IRF641R [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 18A I(D) | TO-220AB ; 晶体管| MOSFET | N沟道| 150V V( BR ) DSS | 18A I( D) | TO- 220AB
IRF641R
型号: IRF641R
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 18A I(D) | TO-220AB
晶体管| MOSFET | N沟道| 150V V( BR ) DSS | 18A I( D) | TO- 220AB

晶体 晶体管
文件: 总1页 (文件大小:44K)
下载:  下载PDF数据表文档文件

IRF642

N-Channel Power MOSFETs, 18A, 150-200V

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87 FAIRCHILD

IRF642

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 IRF

IRF642

16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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0 MOTOROLA

IRF642

16A, 200V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

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0 ROCHESTER

IRF642-004PBF

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF642-005PBF

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF642-012

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 IRF

IRF642PBF

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 IRF

IRF642R

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 16A I(D) | TO-220AB

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24 ETC

IRF643

N-Channel Power MOSFETs, 18A, 150-200V

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159 FAIRCHILD

IRF643-001

Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF643-002PBF

Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF643-004

Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF643-004PBF

Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF

IRF643-006PBF

Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 IRF