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IRF821R [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-220AB ; 晶体管| MOSFET | N沟道| 450V V（ BR ） DSS | 2.5AI （D ） | TO- 220AB\n
IRF821R
元器件型号： IRF821R
生产厂家： ETC    ETC
描述和应用：

TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-220AB
晶体管| MOSFET | N沟道| 450V V（ BR ） DSS | 2.5AI （D ） | TO- 220AB\n

晶体 晶体管
PDF文件： 总1页 (文件大小：51K)
下载文档：  下载PDF数据表文档文件
型号参数：IRF821R参数
 查看货源

IRF822

 N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

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47 FAIRCHILD

IRF822

 N-CHANNEL POWER MOSFETS

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91 SAMSUNG

IRF822

 N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS

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38 STMICROELECTR

IRF822

 N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS

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25 STMICROELECTR

IRF822

 Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRF822

 Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 IRF

IRF822-004

 Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF822-005

 Power Field-Effect Transistor, 2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRF822FI

 N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS

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68 STMICROELECTR

IRF822FI

 N CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORS

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24 STMICROELECTR

IRF822R

 TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2A I(D) | TO-220AB

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20 ETC

IRF823

 N-Channel Power MOSFETs, 3.0 A, 450 V/500 V

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27 FAIRCHILD

IRF823

 N-CHANNEL Enhancement-Mode Silicon Gate TMOS

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27 MOTOROLA

IRF823

 N-CHANNEL POWER MOSFETS

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27 SAMSUNG

IRF823R

 TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2A I(D) | TO-220AB

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18 ETC
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