IRF9632 [ETC]

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 3A I(D) | TO-220AB ; 晶体管| MOSFET | P沟道| 200V V( BR ) DSS | 3A I( D) | TO- 220AB\n
IRF9632
型号: IRF9632
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 3A I(D) | TO-220AB
晶体管| MOSFET | P沟道| 200V V( BR ) DSS | 3A I( D) | TO- 220AB\n

晶体 晶体管
文件: 总6页 (文件大小:457K)
下载:  下载PDF数据表文档文件

IRF9633

TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 3A I(D) | TO-220AB

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27 ETC

IRF9633

P-CHANNEL POWER MOSFETS

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42 SAMSUNG

IRF9633

P-CHANNEL POWER MOSFETS

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17 SAMSUNG

IRF9640

P-CHANNEL POWER MOSFETS

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361 SAMSUNG

IRF9640

P-CHANNEL POWER MOSFETS

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545 SAMSUNG

IRF9640

Power MOSFET

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604 VISHAY

IRF9640

11A, 200V, 0.500 Ohm, P-Channel Power MOSFETs

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529 INTERSIL

IRF9640

Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)

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2640 IRF

IRF9640-004PBF

Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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3 VISHAY

IRF9640-005

Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

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0 VISHAY

IRF9640-006PBF

Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY

IRF9640-009PBF

Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 IRF

IRF9640FPBF

Power Field-Effect Transistor, 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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1 IRF

IRF9640L

Power MOSFET

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41 VISHAY

IRF9640LPBF

Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,

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0 VISHAY