IRFC1404 [ETC]
;
| 型号： | IRFC1404 |
| 厂家： | 
ETC |
| 描述： |
|
| 文件： | 总1页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 93776
IRFC1404
HEXFET® Power MOSFET Die in Wafer Form
D
40V
Size 4.0
RDS(on)=0.0029Ω
G
6" Wafer
S
Electrical Characteristics (Wafer Form)
Parameter
V(BR)DSS
RDS(on)
VGS(th)
IDSS
Description
Guaranteed (Min/Max)
Test Conditions
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
40V Min.
2.9mΩ Max.
VGS = 0V, ID = 250µA
VGS = 10V, ID = 45A
VDS = VGS, ID = 250µA
VDS = 40V, VGS = 0V, TJ = 25°C
VGS = ±20V
2.0V Min., 4.0V Max.
25µA Max.
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Operating Junction and
IGSS
± 200nA Max.
TJ
-55°C to 175°C Max.
TSTG
Storage Temperature Range
Mechanical Data
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )
100% Al (0.008 mm)
.170" x .230" [ 4.32 mm x 5.84 mm ]
150 mm, with 100 flat
Wafer Diameter:
Wafer Thickness:
0.356 mm ± 0.025 mm
Relevant Die Mechanical Drawing Number
Minimum Street Width
01-5384
0.109 mm
Reject Ink Dot Size
0.51 mm Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 °C
Recommended Storage Environment:
Recommended Die Attach Conditions:
Die Outline
www.irf.com
1
10/12/99
相关型号：
IRFC140PBF
Power Field-Effect Transistor, 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFC150
Power Field-Effect Transistor, 34A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE
MICROSEMI
IRFC150
Power Field-Effect Transistor, 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
IRFC18N50KB
Power Field-Effect Transistor, 500V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-2
VISHAY
IRFC210
Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE
MICROSEMI
IRFC214
Power Field-Effect Transistor, 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
INFINEON
©2020 ICPDF网 联系我们和版权申明