关闭背景特效

IRFD022 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 2.2A I(D) | TO-250VAR ; 晶体管| MOSFET | N沟道| 50V V（ BR ） DSS | 2.2AI （D ） | TO- 250VAR\n

IRFD022


元器件型号：	IRFD022
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 50V V(BR)DSS \| 2.2A I(D) \| TO-250VAR 晶体管\| MOSFET \| N沟道\| 50V V（ BR ） DSS \| 2.2AI （D ） \| TO- 250VAR\n 晶体晶体管
PDF文件：	总6页 (文件大小：441K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFD022参数

IRFD024

Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)

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161 IRF

IRFD024

Power MOSFET

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34 VISHAY

IRFD024

Power MOSFET

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46 VISHAY

IRFD024

Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIP-4

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1 IRF

IRFD024_10

Power MOSFET

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11 VISHAY

IRFD024PBF

Power MOSFET

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14 VISHAY

IRFD024PBF

Power MOSFET

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32 VISHAY

IRFD024PBF

HEXFET Power MOSFET

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18 IRF

IRFD025

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 2.2A I(D) | DIP

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24 ETC

IRFD025

Small Signal Field-Effect Transistor, 2.2A I(D), 60V, N-Channel, Silicon, Metal-oxide Semiconductor FET, SIMILAR TO MO-001AN, 3 PIN

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1 IRF

IRFD110

1A, 100V, 0.600 Ohm, N-Channel Power MOSFET

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1020 INTERSIL

IRFD110

Power MOSFET(Vdss=100V, Rds(on)=0.54ohm, Id=1.0A)

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617 IRF

IRFD110

Power MOSFET

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247 VISHAY

IRFD110

Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4

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10 IRF

IRFD110

Small Signal Field-Effect Transistor, 1A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HD-1, DIP-4

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12 VISHAY

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