关闭背景特效

IRFD212R [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 450MA I(D) | TO-250VAR ; 晶体管| MOSFET | N沟道| 200V V（ BR ） DSS | 450MA I（ D） | TO- 250VAR\n

IRFD212R


元器件型号：	IRFD212R
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 200V V(BR)DSS \| 450MA I(D) \| TO-250VAR 晶体管\| MOSFET \| N沟道\| 200V V（ BR ） DSS \| 450MA I（ D） \| TO- 250VAR\n 晶体晶体管开关光电二极管
PDF文件：	总1页 (文件大小：50K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFD212R参数

IRFD213

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 450MA I(D) | TO-250VAR

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50 ETC

IRFD213

0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS

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27 HARRIS

IRFD213

0.6A AND 0.45A, 150V AND 200V, 1.5 AND 2.4 OHM, N-CHANNEL POWER MOSFETS

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30 HARRIS

IRFD213R

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 450MA I(D) | TO-250VAR

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20 ETC

IRFD214

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=0.45A)

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34 IRF

IRFD214

Power MOSFET

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18 VISHAY

IRFD214PBF

Power MOSFET

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14 VISHAY

IRFD214PBF

HEXFET Power MOSFET

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13 IRF

IRFD220

Power MOSFET

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140 VISHAY

IRFD220

Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=0.80A)

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117 IRF

IRFD220

0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET

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29 FAIRCHILD

IRFD220

0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET

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121 FAIRCHILD

IRFD220

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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2 VISHAY

IRFD220

Small Signal Field-Effect Transistor, 0.8A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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2 MOTOROLA

IRFD220

0.8A, 200V, 0.800 Ohm, N-Channel Power MOSFET

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89 INTERSIL

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