关闭背景特效

IRFF111R [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 3.5A I(D) | TO-205AF ; 晶体管| MOSFET | N沟道| 80V V（ BR ） DSS | 3.5AI （D ） | TO- 205AF\n

IRFF111R


元器件型号：	IRFF111R
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 80V V(BR)DSS \| 3.5A I(D) \| TO-205AF 晶体管\| MOSFET \| N沟道\| 80V V（ BR ） DSS \| 3.5AI （D ） \| TO- 205AF\n 晶体晶体管开关脉冲
PDF文件：	总1页 (文件大小：44K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFF111R参数

IRFF112

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 3A I(D) | TO-205AF

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31 ETC

IRFF112

Power MOS Field-Effect Transistors

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30 GESS

IRFF112

Power Field-Effect Transistor, 3A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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0 IRF

IRFF112

Power Field-Effect Transistor, 3A I(D), 100V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205

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0 VISHAY

IRFF112R

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 3A I(D) | TO-205AF

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17 ETC

IRFF113

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 3A I(D) | TO-39

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68 ETC

IRFF113

Power MOS Field-Effect Transistors

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46 GESS

IRFF113

3A, 80V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

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0 ROCHESTER

IRFF113

Power Field-Effect Transistor, 3A I(D), 60V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205

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0 VISHAY

IRFF113R

TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 3A I(D) | TO-205AF

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41 ETC

IRFF120

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

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97 IRF

IRFF120

6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET

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45 INTERSIL

IRFF120

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF)

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45 IRF

IRFF120

N-Channel Enhancement-Mode Power MOS Field-Effect Transistors

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41 GESS

IRFF120

Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205

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2 VISHAY

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