IRFI614A [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.8A I(D) | TO-262AA ; 晶体管| MOSFET | N沟道| 250V V( BR ) DSS | 2.8AI (D ) | TO- 262AA\n
IRFI614A
型号: IRFI614A
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.8A I(D) | TO-262AA
晶体管| MOSFET | N沟道| 250V V( BR ) DSS | 2.8AI (D ) | TO- 262AA\n

晶体 晶体管 脉冲
文件: 总7页 (文件大小:232K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

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IRFI614ATU

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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1 FAIRCHILD

IRFI614B

250V N-Channel MOSFET

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21 FAIRCHILD

IRFI614BTU

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1 FAIRCHILD

IRFI614BTU_FP001

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IRFI614G

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IRFI614G

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IRFI614G-002

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI614G-002PBF

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI614G-004

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI614G-004PBF

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI614G-005

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1 INFINEON

IRFI614G-005PBF

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0 INFINEON

IRFI614G-006

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI614G-006PBF

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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IRFI614G-009

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI614G-009PBF

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI614G-010PBF

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI614G-011PBF

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI614G-012PBF

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 INFINEON

IRFI614G-013PBF

Power Field-Effect Transistor, 2.1A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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