IRFI9520N [ETC]

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | TO-220AB ; 晶体管| MOSFET | P沟道| 100V V( BR ) DSS | 5.5AI (D ) | TO- 220AB\n
IRFI9520N
型号: IRFI9520N
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.5A I(D) | TO-220AB
晶体管| MOSFET | P沟道| 100V V( BR ) DSS | 5.5AI (D ) | TO- 220AB\n

晶体 晶体管
文件: 总8页 (文件大小:384K)
下载:  下载PDF数据表文档文件

IRFI9530G

Power MOSFET(Vdss=-100V, Rds(on)=0.30ohm, Id=-7.7A)

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54 IRF

IRFI9530G

Power MOSFET

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30 VISHAY

IRFI9530G

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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2 VISHAY

IRFI9530G-002PBF

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI9530G-003

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI9530G-003PBF

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY

IRFI9530G-003PBF

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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-
0 IRF

IRFI9530G-009PBF

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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-
0 VISHAY

IRFI9530G-009PBF

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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-
0 IRF

IRFI9530G-011PBF

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 IRF

IRFI9530G-012PBF

暂无描述

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0 VISHAY

IRFI9530G-012PBF

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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-
0 IRF

IRFI9530G-017PBF

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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-
0 IRF

IRFI9530G-018PBF

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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-
0 IRF

IRFI9530G-019PBF

Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 VISHAY