关闭背景特效

IRFR91209A [ETC]

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 5.6A I(D) | TO-252AA ; 晶体管| MOSFET | P沟道| 100V V（ BR ） DSS | 5.6AI （D ） | TO- 252AA\n

IRFR91209A


元器件型号：	IRFR91209A
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 5.6A I(D) \| TO-252AA 晶体管\| MOSFET \| P沟道\| 100V V（ BR ） DSS \| 5.6AI （D ） \| TO- 252AA\n 晶体晶体管开关
PDF文件：	总6页 (文件大小：213K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFR91209A参数

IRFR9120N

Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A)

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419 IRF

IRFR9120N

HEXFETÂ® Power MOSFET

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145 SHENZHENFREES

IRFR9120NPBF

HEXFET POWER MOSFET

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22 KERSEMI

IRFR9120NPBF

ULTRA LOW ON-RESISTANCE

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16 KERSEMI

IRFR9120NPBF

HEXFET Power MOSFET ( VDSS = -100V , RDS(on) = 0.48ヘ , ID = -6.6A )

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95 IRF

IRFR9120NPBF

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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1 IRF

IRFR9120NPBF

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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2 INFINEON

IRFR9120NTRLPBF

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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0 INFINEON

IRFR9120NTRPBF

Ultra Low On-Resistance

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86 IRF

IRFR9120NTRPBF

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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0 INFINEON

IRFR9120NTRR

HEXFET Power MOSFET

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22 KERSEMI

IRFR9120NTRRPBF

Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

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1 IRF

IRFR9120PBF

Dynamic dV/dt Rating

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20 KERSEMI

IRFR9120PBF

Power MOSFET

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8 KERSEMI

IRFR9120PBF

HEXFET㈢ Power MOSFET

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40 IRF

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