关闭背景特效

IRFS641 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 9.8A I(D) | SOT-186 ; 晶体管| MOSFET | N沟道| 150V V（ BR ） DSS | 9.8AI （D ） | SOT- 186\n

IRFS641


元器件型号：	IRFS641
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 9.8A I(D) \| SOT-186 晶体管\| MOSFET \| N沟道\| 150V V（ BR ） DSS \| 9.8AI （D ） \| SOT- 186\n 晶体晶体管
PDF文件：	总5页 (文件大小：291K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFS641参数

IRFS642

Power Field-Effect Transistor, 16A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS644

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8.5A I(D) | TO-220VAR

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34 ETC

IRFS644A

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7.9A I(D) | TO-220AB

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84 ETC

IRFS644A

Advanced Power MOSFET

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34 FAIRCHILD

IRFS644B

250V N-Channel MOSFET

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59 FAIRCHILD

IRFS645

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7.4A I(D) | TO-220VAR

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49 ETC

IRFS645

Power Field-Effect Transistor, 7.4A I(D), 250V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFS650A

Advanced Power MOSFET

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37 FAIRCHILD

IRFS650A

Advanced Power MOSFET

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11 FAIRCHILD

IRFS650B

200V N-Channel MOSFET

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44 FAIRCHILD

IRFS650B

200V N-Channel MOSFET

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27 FAIRCHILD

IRFS650B_FP001

Power Field-Effect Transistor, 28A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220F, 3 PIN

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0 FAIRCHILD

IRFS654

250V N-Channel MOSFET

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18 FAIRCHILD

IRFS654

250V N-Channel MOSFET

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43 FAIRCHILD

IRFS654A

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 12A I(D) | TO-220AB

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19 ETC

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