IRFS821 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2A I(D) | TO-220VAR ; 晶体管| MOSFET | N沟道| 450V V( BR ) DSS | 2A I( D) | TO- 220VAR\n型号: | IRFS821 |
厂家: | ETC |
描述: | TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2A I(D) | TO-220VAR
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文件: | 总5页 (文件大小:284K) |
下载: | 下载PDF数据表文档文件 |
IRFS822
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 1.5A I(D) | TO-220VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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27
ETC
IRFS822
Power Field-Effect Transistor, 2.2A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
IRFS823
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 1.5A I(D) | TO-220VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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10
ETC
IRFS830
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3A I(D) | TO-220VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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84
ETC
IRFS830
Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
IRFS830A
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 3.1A I(D) | TO-220ABWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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115
ETC
IRFS830A
Advanced Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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39
FAIRCHILD
IRFS830B
500V N-Channel MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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70
FAIRCHILD
IRFS830BT
Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
FAIRCHILD
IRFS831
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 3A I(D) | TO-220VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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19
ETC
IRFS831
Power Field-Effect Transistor, 3.1A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
IRFS832
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.5A I(D) | TO-220VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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12
ETC
IRFS832
Power Field-Effect Transistor, 2.5A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
IRFS833
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.5A I(D) | TO-220VARWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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16
ETC
IRFS833
Power Field-Effect Transistor, 2.5A I(D), 450V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
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