IRFSZ20 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 13A I(D) | SOT-186 ; 晶体管| MOSFET | N沟道| 50V V( BR ) DSS | 13A I( D) | SOT- 186\n
IRFSZ20
型号: IRFSZ20
厂家: ETC    ETC
描述:

TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 13A I(D) | SOT-186
晶体管| MOSFET | N沟道| 50V V( BR ) DSS | 13A I( D) | SOT- 186\n

晶体 晶体管
文件: 总5页 (文件大小:289K)
下载:  下载PDF数据表文档文件

IRFSZ22

Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFSZ22

Power Field-Effect Transistor, 14A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFSZ24

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 13A I(D) | SOT-186

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58 ETC

IRFSZ24

Power Field-Effect Transistor, 13A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRFSZ24A

Power Field-Effect Transistor, 14A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220F, 3 PIN

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0 FAIRCHILD

IRFSZ25

Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFSZ30

TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 20A I(D) | SOT-186

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32 ETC

IRFSZ30

Power Field-Effect Transistor, 20A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRFSZ32

Power Field-Effect Transistor, 15.6A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFSZ34

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | SOT-186

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57 ETC

IRFSZ34A

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-220AB

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118 ETC

IRFSZ35

Power Field-Effect Transistor, 15.6A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220F, 3 PIN

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0 SAMSUNG

IRFSZ40

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 28A I(D) | SOT-186

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32 ETC

IRFSZ40

Power Field-Effect Transistor, 28A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

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0 SAMSUNG

IRFSZ44

TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 28A I(D) | SOT-186

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113 ETC