关闭背景特效

IRFU211 [ETC]

TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 2.7A I(D) | TO-251AA ; 晶体管| MOSFET | N沟道| 150V V（ BR ） DSS | 2.7AI （D ） | TO- 251AA\n

IRFU211


元器件型号：	IRFU211
生产厂家：	ETC
描述和应用：	TRANSISTOR \| MOSFET \| N-CHANNEL \| 150V V(BR)DSS \| 2.7A I(D) \| TO-251AA 晶体管\| MOSFET \| N沟道\| 150V V（ BR ） DSS \| 2.7AI （D ） \| TO- 251AA\n 晶体晶体管
PDF文件：	总5页 (文件大小：288K)
下载文档：	下载PDF数据表文档文件
型号参数：IRFU211参数

IRFU212

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 2.1A I(D) | TO-251AA

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18 ETC

IRFU212

Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

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0 SAMSUNG

IRFU212

Power Field-Effect Transistor, 2.1A I(D), 200V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

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0 IRF

IRFU214

Power MOSFET(Vdss=250V, Rds(on)=2.0ohm, Id=2.2A)

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78 IRF

IRFU214

2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

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43 INTERSIL

IRFU214

Power MOSFET

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39 VISHAY

IRFU214

Power MOSFET

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19 KERSEMI

IRFU214A

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 2.2A I(D) | TO-251AA

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50 ETC

IRFU214ATU

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 FAIRCHILD

IRFU214B

250V N-Channel MOSFET

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97 FAIRCHILD

IRFU214BTU

暂无描述

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1 FAIRCHILD

IRFU214PBF

Power MOSFET

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12 KERSEMI

IRFU214PBF

Power MOSFET

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27 VISHAY

IRFU214PBF

HEXFET㈢ Power MOSFET

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19 IRF

IRFU220

Power MOSFET

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117 VISHAY

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