IRFW720A [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-263AB ; 晶体管| MOSFET | N沟道| 400V V（ BR ） DSS | 3.3AI （D ） | TO- 263AB\n
| 型号： | IRFW720A |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-263AB
|
| 文件： | 总7页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFW/I720A
FEATURES
BVDSS = 400 V
RDS(on) = 1.8Ω
ID = 3.3 A
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
♦
♦
♦
♦
♦
♦
♦
Improved Gate Charge
Extended Safe Operating Area
D2-PAK
I2-PAK
Lower Leakage Current: 10 A (Max.) @ VDS = 400V
µ
2
Lower RDS(ON): 1.408 (Typ.)
Ω
1
1
2
3
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
Characteristic
Value
400
3.3
Units
VDSS
Drain-to-Source Voltage
V
Continuous Drain Current (TC=25°C)
Continuous Drain Current (TC=100°C)
Drain Current-Pulsed
ID
A
2.1
IDM
VGS
EAS
IAR
(1)
13
A
V
Gate-to-Source Voltage
30
±
(2)
(1)
(1)
(3)
Single Pulsed Avalanche Energy
Avalanche Current
249
3.3
4.9
4.0
3.1
49
mJ
A
EAR
dv/dt
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
mJ
V/ns
W
*
Total Power Dissipation (TA=25°C)
Total Power Dissipation (TC=25°C)
Linear Derating Factor
PD
W
0.39
W/°C
Operating Junction and
TJ , TSTG
- 55 to +150
300
Storage Temperature Range
°C
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
TL
Thermal Resistance
Symbol
RθJC
Characteristic
Typ.
Max.
Units
Junction-to-Case
--
--
--
2.57
40
RθJA
*
Junction-to-Ambient
Junction-to-Ambient
°C/W
RθJA
62.5
When mounted on the minimum pad size recommended (PCB Mount).
*
Rev. B
©1999 Fairchild Semiconductor Corporation
IRFW/I720A
Electrical Characteristics (TC=25°C unless otherwise specified)
Symbol
BVDSS
Characteristic
Min. Typ. Max. Units
Test Condition
V
GS=0V,ID=250µA
V
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
400 --
--
∆BV/∆TJ
VGS(th)
ID=250µA
See Fig 7
V/°C
-- 0.54 --
VDS=5V,ID=250µA
VGS=30V
V
2.0
--
--
4.0
100
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
--
--
--
--
IGSS
nA
VGS=-30V
-- -100
V
V
DS=400V
--
--
10
IDSS
Drain-to-Source Leakage Current
µA
DS=320V,TC=125°C
100
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
VGS=10V,ID=1.65A
VDS=50V,ID=1.65A
(4)
(4)
RDS(on)
--
--
1.8
Ω
Ω
gfs
Ciss
Coss
Crss
td(on)
tr
--
--
--
--
--
--
--
--
--
--
--
2.25 --
385 500
V
GS=0V,VDS=25V,f =1MHz
See Fig 5
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
70
33
35
45
110
45
26
--
60
27
pF
ns
12
VDD=200V,ID=3.3A,
RG=18Ω
17
td(off)
tf
Turn-Off Delay Time
Fall Time
51
(4) (5)
(4) (5)
See Fig 13
18
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain ( Miller ) Charge
19
VDS=320V,VGS=10V,
ID=3.3A
Qgs
Qgd
nC
2.7
11.1
--
See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol
IS
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
Integral reverse pn-diode
in the MOSFET
--
--
--
--
--
--
3.3
13
1.5
--
A
ISM
(1)
(4)
VSD
trr
V
--
TJ=25°C,IS=3.3A,VGS=0V
TJ=25°C,IF=3.3A
ns
µC
230
Qrr
-- 1.16 --
(4)
diF/dt=100A/µs
Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=40mH, IAS=3.3A, VDD=50V, R =27 , Starting T =25 C
Ω
°
G
J
(3) ISD 3.3A, di/dt 110A/ s, V
BV , Starting T =25 C
°
DSS J
≤
≤
µ
≤
DD
(4) Pulse Test: Pulse Width = 250 s, Duty Cycle 2%
µ
≤
(5) Essentially Independent of Operating Temperature
IRFW/I720A
Fig 1. Output Characteristics
Fig 2. Transfer Characteristics
1
1
VGS
10
10
Top :
15V
10 V
8.0 V
7.0 V
6.0 V
5.5V
5.0 V
150oC
0
Bottom : 4.5V
10
0
10
25oC
@Notes :
1. VGS =0 V
2. VDS =50V
3. 250 µsPulse Test
-1
10
@ Notes:
-55 oC
1. 250µs PulseTest
2. T =25 oC
C
-1
10
-1
0
1
2
4
6
8
10
10
10
10
VGS , Gate-Source Voltage [V]
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
Fig 4. Source-Drain Diode Forward Voltage
5
4
3
2
1
0
1
10
VGS =10V
0
10
VGS =20V
@Notes:
150oC
1. VGS =0V
25oC
@Note:T =25oC
2. 250µsPulseTest
J
-1
10
0
3
6
9
12
0.4
0.6
0.8
1.0
1.2
I , Drain Current [A]
VSD , Source-Drain Voltage [V]
D
Fig 5. Capacitance vs. Drain-Source Voltage
Fig 6. Gate Charge vs. Gate-Source Voltage
600
400
200
C
iss= C + Cgd (C = shorted)
gs ds
V
DS =80V
DS =200V
DS =320V
C
oss= C + C
ds gd
10
C
rss= C
C iss
gd
V
V
5
C oss
@ Notes:
1. VGS =0 V
2. f =1 MHz
C rss
@Notes :I =3.3A
D
00
10
0
1
0
5
10
15
20
10
Q , Total Gate Charge [nC]
V
DS , Drain-Source Voltage [V]
G
IRFW/I720A
Fig 7. Breakdown Voltage vs. Temperature
Fig 8. On-Resistance vs. Temperature
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.1
1.0
0.9
@ Notes:
1. VGS =0 V
@Notes :
1. VGS =10V
2. I =250µA
2. I =1.65 A
D
D
0.8
-75 -50 -25
0
25
50
75
100 125 150 175
o
-75 -50 -25
0
25
50
75
100 125 150 175
o
T , Junction Temperature [C]
T , Junction Temperature [C]
J
J
Fig 9. Max. Safe Operating Area
Fig 10. Max. Drain Current vs. Case Temperature
4
2
10
Operation in This Area
isLimitedby R DS(on)
1
10µs
3
2
1
0
10
100µs
1 ms
10ms
0
DC
10
@ Notes:
-1
10
1. T =25oC
2. T =150oC
C
J
3. SinglePulse
-2
10
0
1
2
3
25
50
75
100
125
150
10
10
10
10
o
T , Case Temperature [C]
VDS , Drain-Source Voltage [V]
c
Fig 11. Thermal Response
D=0.5
0.2
100
10-1
10-2
@ Notes :
1. Z (t)=2.57 oC/W Max.
θ JC
0.1
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM*Zθ JC(t)
0.05
0.02
0.01
PDM
single pulse
t1
t2
10-5
10-4
10-3
10-2
10-1
100
101
t1 , Square Wave Pulse Duration [sec]
IRFW/I720A
Fig 12. Gate Charge Test Circuit & Waveform
Current Regulator
VGS
Same Type
as DUT
50k
Ω
Qg
200nF
12V
10V
300nF
VDS
Qgs
Qgd
VGS
DUT
R2
3mA
R1
Charge
Current Sampling (IG) Current Sampling (ID)
Resistor Resistor
Fig 13. Resistive Switching Test Circuit & Waveforms
RL
Vout
Vin
Vout
90%
VDD
( 0.5 rated VDS
)
RG
DUT
10%
Vin
10V
td(on)
tr
td(off)
tf
t on
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
2
2
LL
ID
----
--------------------
EAS
=
LL IAS
BVDSS -- VDD
VDS
BVDSS
IAS
Vary tp to obtain
required peak ID
RG
ID (t)
VDD
C
DUT
VDS (t)
VDD
10V
t p
t p
Time
IRFW/I720A
Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
--
I S
L
Driver
VGS
Same Type
as DUT
RG
VDD
VGS
dv/dt controlled by RG
IS controlled by Duty Factor
D
Gate Pulse Width
--------------------------
VGS
D =
Gate Pulse Period
10V
( Driver )
IFM , Body Diode Forward Current
I S
di/dt
( DUT )
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
Vf
VDS
( DUT )
VDD
Body Diode
Forward Voltage Drop
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Obsolete
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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