IRGCC50KE [ETC]
;PD-9.1424
IRGCC50KE
TARGET
IRGCC50KE IGBT Die in Wafer Form
C
600 V
Size 5
Ultra-Fast Speed
5" Wafer
G
E
Electrical Characteristics ( Wafer Form )
Parameter
VCE (on)
V(BR)CES
VGE(th)
ICES
Description
Guaranteed (Min/Max)
Test Conditions
IC = 20A, TJ = 25°C, VGE = 15V
TJ = 25°C, ICES = 250µA, VGE = 0V
VGE = VCE , TJ =25°C, IC =250µA
TJ = 25°C, VCE = 600V
Collector-to-Emitter Saturation Voltage
Colletor-to-Emitter Breakdown Voltage
Gate Threshold Voltage
3.0V Max.
600V Min.
3.0V Min., 5.5V Max.
250 µA Max.
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
IGES
± 500 nA Max.
TJ = 25°C, VGE = +/- 20V
Mechanical Data
Norminal Backmetal Composition, Thickness:
Norminal Front Metal Composition, Thickness:
Dimensions:
Cr-Ni-Ag ( 1kA-4kA-6kA )
99% Al, 1% Si (3 microns)
0.257" x 0.260"
Wafer Diameter:
125mm, with std. < 100 > flat
.015" + / -.003"
Wafer thickness:
Relevant Die Mechanical Dwg. Number
Minimum Street Width
01-5103
100 Microns
Reject Ink Dot Size
0.25mm Diameter Minimum
See Die Outline drawing below
Store in original container, in dessicated
nitrogen, with no contamination
Ink Dot Location
Recommended Storage Environment:
Reference Standard IR packaged part ( for design ) : IRGPC50K
Die Outline
INK DOT
NOTES :
LOCATION
3.69
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES )
2. CONTROLLING DIMENSION : ( INCH )
3. LETTER DESIGNATION :
(.145 )
S = SOURCE
G = GATE
4. DIMENSIONAL TOLERANCES
BONDING PADS : < 0.635 TOLERANCE = +/- 0.013
6.60
(.260 )
1.62
(.064 )
EMITTER
WIDTH
&
LENGTH
OVERALL DIE
WIDTH
&
< (.0250 ) TOLERANCE =+/- (.0005 )
> 0.635 TOLERANCE = +/- 0.025
> (.0250 ) TOLERANCE = +/- (.0010 )
< 1.270 TOLERANCE = +/- 0.102
< (.050 ) TOLERANCE = +/- (.004 )
> 0.635 TOLERANCE = +/- 0.203
> (.050 ) TOLERANCE = +/- (.008 )
0.64
(.025 )
G
0.61
(.024 )
6.53
LENGTH
(.257 )
5. UNLESS OTHERWISE NOTED ALL DIE ARE GEN III
相关型号:
©2020 ICPDF网 联系我们和版权申明