IRGMVC50UD [ETC]

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR ; 晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 45A I(C ) | TO- 258VAR\n
IRGMVC50UD
型号: IRGMVC50UD
厂家: ETC    ETC
描述:

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR
晶体管| IGBT | N -CHAN | 600V V( BR ) CES | 45A I(C ) | TO- 258VAR\n

晶体 晶体管 双极性晶体管
文件: 总8页 (文件大小:432K)
下载:  下载PDF数据表文档文件

IRGMVC50UPBF

Insulated Gate Bipolar Transistor, 45A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258AA, 3 PIN

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0 IRF

IRGMVC50UU

TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 45A I(C) | TO-258VAR

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4 ETC

IRGNA035U06

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7

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0 IRF

IRGNA035U06

Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7

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0 IRF

IRGNA050F06

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7

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0 IRF

IRGNA050F06

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7

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0 IRF

IRGNA065U06

Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7

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0 IRF

IRGNA065U06

Insulated Gate Bipolar Transistor, 65A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7

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0 IRF

IRGNA090F06

Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7

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0 IRF

IRGNA090F06

Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7

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0 IRF

IRGNA090U06

Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7

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0 IRF

IRGNA090U06

Insulated Gate Bipolar Transistor, 90A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7

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0 IRF

IRGNA120F06

Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7

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0 IRF

IRGNA120F06

Insulated Gate Bipolar Transistor, 120A I(C), 600V V(BR)CES, N-Channel, ADD-A-PAK-7

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0 IRF

IRGNC30FD2

Fit Rate / Equivalent Device Hours

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17 IRF