IRH8230 [ETC]
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package ; 200V 1000kRad高可靠性的单N沟道TID硬化MOSFET采用TO - 204AA封装
| 型号： | IRH8230 |
| 厂家： | 
ETC |
| 描述： | 200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA package
|
| 文件： | 总12页 (文件大小：435K) |
| 下载： | 下载PDF数据表文档文件 |
IRH8250
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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12
IRF
IRH8250
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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14
IRF
IRH8250PBF
Power Field-Effect Transistor, 26A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-2Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRH8450
500V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-204AA packageWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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16
ETC
IRH8450
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
13
IRF
IRH8450PBF
Power Field-Effect Transistor, 11A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRH9130
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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21
IRF
IRH9150
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
37
IRF
IRH9150PBF
暂无描述Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRH9230
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.8ohm, Id=-6.5A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
20
IRF
IRH9250
TRANSISTOR P-CHANNEL(BVdss=-200V, Rds(on)=0.315ohm, Id=-14A)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
20
IRF
IRH9250
Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRH9250PBF
Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE, HERMETIC SEALED, CERAMIC PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRH93130
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
20
IRF
IRH93150
RADIATION HARDENED POWER MOSFET THRU-HOLE (T0-204AE)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
22
IRF
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