IRHM58064 [ETC]
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package ; 60V 1000kRad高可靠性的单N沟道TID硬化MOSFET采用TO - 254AA封装\n型号: | IRHM58064 |
厂家: | ETC |
描述: | 60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA package
|
文件: | 总8页 (文件大小:121K) |
下载: | 下载PDF数据表文档文件 |
IRHM58064PBF
Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHM58064U
Power Field-Effect Transistor, 35A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRHM58064UPBF
暂无描述Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHM58160
RADIATION HARDENED POWER MOSFET THRU-HOLEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
32
IRF
IRHM58260
RADIATION HARDENED POWER MOSFET THRU-HOLEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
11
IRF
IRHM58260
RADIATION HARDENED POWER MOSFET THRU-HOLEWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
15
IRF
IRHM58260
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254AA, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRHM58260D
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRHM58260DPBF
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, TO-254AA, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRHM58260PBF
Power Field-Effect Transistor, 35A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED, TO-254AA, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRHM58Z60
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 35A I(D) | TO-254AAWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
22
ETC
IRHM58Z60
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
13
IRF
IRHM58Z60SCS
Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRHM7054
60V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a TO-254AA packageWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
28
ETC
IRHM7054
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
21
IRF
©2020 ICPDF网 联系我们和版权申明