IRHNA597160 [ETC]

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 52A I(D) | SMT ; 晶体管| MOSFET | P沟道| 100V V（ BR ） DSS | 52A I（ D） | SMT\n

IRHNA597160


型号：	IRHNA597160
厂家：	ETC
描述：	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| 52A I(D) \| SMT 晶体管\| MOSFET \| P沟道\| 100V V（ BR ） DSS \| 52A I（ D） \| SMT\n 晶体晶体管
文件：	总8页 (文件大小：112K)
下载：	下载PDF数据表文档文件

IRHNA597260

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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32 IRF

IRHNA597Z60

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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12 IRF

IRHNA597Z60SCSD

Power Field-Effect Transistor,

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0 INFINEON

IRHNA63160

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL

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31 IRF

IRHNA63164

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

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12 IRF

IRHNA63260

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

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13 IRF

IRHNA63264

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

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13 IRF

IRHNA63264

Power Field-Effect Transistor, 56A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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0 INFINEON

IRHNA67160

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2), 100V, N-CHANNEL

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57 IRF

IRHNA67160PBF

Power Field-Effect Transistor, 56A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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0 IRF

IRHNA67160SCS

Power Field-Effect Transistor, 56A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

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0 INFINEON

IRHNA67164

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

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62 IRF

IRHNA67260

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

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102 IRF

IRHNA67260PBF

暂无描述

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0 IRF

IRHNA67264

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-2)

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46 IRF

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