IRHNB7Z60 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT ; 晶体管| MOSFET | N沟道| 30V V（ BR ） DSS | 75A I（ D） | SMT\n
| 型号： | IRHNB7Z60 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT
|
| 文件： | 总8页 (文件大小：119K) |
| 下载： | 下载PDF数据表文档文件 |
IRHNB7Z60PBF
暂无描述Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHNB8064
60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 packageWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
22
ETC
IRHNB8160
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
12
IRF
IRHNB8260
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
19
ETC
IRHNB8260
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
14
IRF
IRHNB8260PBF
Power Field-Effect Transistor, 43A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-3, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHNB8Z60
30V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 packageWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
8
ETC
IRHNB8Z60
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
16
IRF
IRHNJ3130
100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGYWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
11
IRF
IRHNJ3130
100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGYWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
11
IRF
IRHNJ3130PBF
Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-0.5, 3 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
IRF
IRHNJ3130SCS
Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
INFINEON
IRHNJ3230
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 9.4A I(D) | SMTWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
21
ETC
IRHNJ3230
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
10
IRF
IRHNJ4130
100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGYWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
14
IRF
©2020 ICPDF网 联系我们和版权申明