IRKVF200-04HK [ETC]
400V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package ; 400V中心抽头共阳极高压晶闸管/晶闸管在MAGN -A- Pak封装\n
| 型号： | IRKVF200-04HK |
| 厂家： | 
ETC |
| 描述： | 400V Center-Tap Common Anode Inverter Thyristor/Thyristor in a MAGN-A-Pak package
|
| 文件： | 总8页 (文件大小：289K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27099 rev. C 03/01
IRK.F200.. SERIES
FAST THYRISTOR/ DIODE and
THYRISTOR/THYRISTOR
MAGN-A-pak Power Modules
Features
200 A
Fast turn-off thyristor
Fast recovery diode
High surge capability
Electrically isolated baseplate
3000 VRMS isolating voltage
Industrial standard package
UL E78996 approved
Description
These series of MAGN-A-pak modules are intended for
applications such as self-commutated inverters, DC
choppers, electronic welders, induction heating and
others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
IRK.F200..
Units
IT(AV)
200
A
°C
A
@TC
85
IT(RMS)
ITSM
444
@50Hz
@60Hz
@50Hz
@60Hz
7600
A
8000
A
2
2
I t
290
KA s
2
265
KA s
2
2
I √t
2900
KA √s
t
20and 25
2
µs
µs
V
q
t
rr
VDRM/VRRM
upto1200
-40to125
TJ
range
oC
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1
IRK.F200.. Series
Bulletin I27099 rev. C 03/01
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
VRRM/VDRM, maximum repetitive
VRSM , maximum non-
IRRM/IDRM max.
@ TJ = 125°C
mA
Type number
IRK.F200-
peak reverse voltage
repetitive peak rev. voltage
V
V
08
12
800
1200
800
1200
50
Current Carrying Capacity
ITM
ITM
ITM
Frequency f
Units
180oel
180oel
100µs
50Hz
380
560
690
450
360
280
50
630
710
530
410
300
50
850
1060
760
560
410
50
2460
1570
630
410
-
3180
2080
860
560
-
A
A
400Hz
460
310
250
180
50
2500Hz
A
5000Hz
A
10000Hz
A
Recovery voltage Vr
Voltage before turn-on Vd
Rise of on-state current di/dt
Case temperature
Equivalent values for RC circuit
50
50
V
80%VDRM
80%VDRM
80%VDRM
V
50
85
50
60
-
-
-
-
A/µs
°C
85
60
85
60
10Ω/0.47µF
10Ω/0.47µF
10Ω/0.47µF
On-state Conduction
Parameter
IRK.F200..
Units Conditions
IT(AV)
Maximum average on-state current
@ Case temperature
IT(RMS) Maximum RMS current
200
85
A
°C
A
180° conduction, half sine wave
444
as AC switch
ITSM
Maximum peak, one-cycle,
non-repetitive surge current
7600
8000
6400
6700
290
A
t = 10ms No voltage
t = 8.3ms reapplied
t = 10ms 100% VRRM
t = 8.3ms reapplied
Sinusoidal half wave,
I2t
Maximum I2t for fusing
KA2s t = 10ms No voltage Initial TJ = 125°C
t = 8.3ms reapplied
265
205
t = 10ms 100% VRRM
187
t = 8.3ms reapplied
I2√t
Maximum I2√t for fusing
2900
1.18
1.25
KA2√s t = 0 to 10ms, no voltage reapplied
VT(TO)1 Low level value of threshold voltage
VT(TO)2 High level value of threshold voltage
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
r
r
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage drop
Maximum holding current
0.74
0.70
1.73
600
mW (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
(I > π x IT(AV)), TJ = TJ max.
t1
t2
VTM
IH
V
Ipk = 600A, TJ = TJ max., tp = 10ms sine pulse
mA TJ = 25°C, IT > 30 A
IL
Typical latching current
1000
mA TJ = 25°C, VA = 12V, Ra = 6Ω, Ig = 1A
2
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
Switching
Parameter
IRK.F200..
800
Units Conditions
di/dt
Maximum non-repetitive rate of rise
A/µs Gate drive 20V, 20Ω, tr ≤ 1ms, VD= 80% VDRM
TJ = 25°C
t
Maximum recovery time
Maximum turn-off time
2
µs
µs
ITM = 350A, di/dt = -25A/µs, VR = 50V, TJ = 25°C
ITM = 750A, TJ = 125°C, di/dt = -25A/µs,
rr
t
K
J
q
20
25
VR = 50V, dv/dt = 400V/µs linear to 80% VDRM
Blocking
Parameter
IRK.F200..
1000
Units Conditions
dv/dt
Maximum critical rate of rise of off-state
voltage
V/µs
TJ = 125°C., exponential to = 67% VDRM
VINS
IRRM
IDRM
RMS isolation voltage
3000
50
V
50 Hz, circuit to base, TJ = 25°C, t = 1 s
Maximum peak reverse and off-state
leakage current
mA TJ = 125°C, rated VDRM/VRRM applied
Triggering
Parameter
Maximum peak gate power
PG(AV) Maximum peak average gate power
IGM Maximum peak positive gate current
- VGM Maximum peak negative gate voltage
IRK.F200..
Units Conditions
PGM
60
10
10
5
W
W
A
f = 50 Hz, d% = 50
TJ = 125°C, f = 50Hz, d% = 50
T = 125°C, t < 5ms
p
J
V
IGT
Max. DC gate current required to trigger
DC gate voltage required to trigger
DC gate current not to trigger
200
3
mA TJ = 25°C, Vak 12V, Ra = 6
VGT
IGD
VGD
V
20
mA TJ = 125°C, rated VDRM applied
V
DC gate voltage not to trigger
0.25
Thermal and Mechanical Specifications
Parameter
IRK.F200..
- 40 to 125
- 40 to 150
0.125
Units Conditions
°C
TJ
T
Max. junction operating temperature range
Max. storage temperature range
stg
RthJC Max. thermal resistance, junction to
K/W Per junction, DC operation
case
RthC-hs Max. thermal resistance, case to
heatsink
0.025
K/W Mounting surface flat and greased
Per module
A mounting compound is recommended. The torque
Nm
T
Mounting torque ± 10% MAP to heatsink 4 - 6 (35 - 53)
busbar to MAP
should be rechecked after a period of 3 hoursto allow
for the spread of the compound. Use of cable lugs is
not recommendd, busbars should be used and
restrained during tightening. Threads must be
4 - 6 (35 - 53) (lb*in)
wt
Approximate weight
500 (17.8)
g (oz)
lubricatedwithacompound
3
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
∆RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
180°
120°
90°
0.009
0.010
0.014
0.020
0.032
0.006
0.011
0.015
0.020
0.033
K/W
TJ = 125°C
60°
30°
Ordering Information Table
Device Code
IRK
T
F
200
-
12
H
K
3
4
5
6
1
2
7
1
2
3
4
5
6
7
-
-
-
-
-
-
-
Moduletype
Circuitconfiguration
Fast SCR
Current rating: IT(AV) x10rounded
Voltage code: Code x 100 = VRRM (See Voltage Ratings Table)
dv/dt code: H ≤ 400V/µs
tq code: K ≤ 20µs
J ≤ 25µs
NOTE: To order the Optional Hardware see Bulletin I27900
4
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
Outline Table
-
-
-
All dimensions in millimeters (inches)
Dimensionsarenominal
Fullengineeringdrawingsareavailable
onrequest
- UL identification number for gate
and cathode wire: UL 1385
- UL identification number for package:
UL 94V0
IRKHF..
IRKLF..
IRKVF..
IRKTF..
IRKUF..
IRKKF..
IRKNF..
130
120
110
100
90
130
120
110
100
90
IRK.F200.. Series
IRK.F200.. Series
R
(DC) = 0.125 K/W
R
(DC) = 0.125 K/W
thJC
thJC
Conduction A ngle
Conduction Period
30
30
60
80
80
60
90
90
70
120
180
70
120
180
DC
60
60
0
50
100
150 200
250 300
350
0
40
80
120
160
200
240
Average On-state Current (A)
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
5
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
350
500
450
400
350
300
250
200
150
100
50
DC
180
120
90
60
30
180
120
90
60
300
250
30
200
RMS Limit
150
RMS Limit
Conduction Angle
Conduction Period
100
50
0
IRK.F200.. Series
Per Junction
IRK.F200.. Series
Per Junction
T
= 125 C
T
= 125 C
J
J
0
0
40
80
120
160
200
0
50
100
150 200 250 300
350
Average On-state Current (A)
Average On-state Current (A)
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
7000
6000
5000
4000
3000
8000
7000
6000
5000
4000
3000
At Any Rated Load Condition And W ith
Ma xim um Non Rep etitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 125 C
J
Initial T = 125
C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
No Voltage Reapplied
Rated V Reapplied
RRM
IRK.F200.. Series
Per Junction
IRK.F200.. Series
Per Junction
1
10
100
0.01
0.1
Pulse Train D uration (s)
1
Nu m b er Of E qu a l Am plitude Half C ycle C urrent Pu lse s (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
1
10000
Steady State Value:
= 0.125 K/W
R
thJC
(DC Operation)
0.1
0.01
1000
T
T
= 25 C
J
J
= 125 C
IRK.F200.. Series
Per Junction
IRK.F200.. Series
Per Junction
100
0.001
1
2
3
4
5
6
7
0.001
0.01
0.1
1
10
100
Instantaneous O n-state Voltage (V)
Square W ave Pulse Duration (s)
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristics
6
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
320
300
280
260
240
220
200
180
160
140
120
100
80
180
150
120
90
I
= 1000 A
500 A
300 A
200 A
100 A
I
= 1000A
500A
300A
200A
100A
TM
TM
60
IRK.F200.. Series
= 125
IRK.F200.. Series
= 125
T
C
T
C
J
J
30
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forw ard Current - di/dt (A/ s)
Rate Of Fall Of Forw ard Current - di/dt (A/ s)
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
1E4
1E3
1E2
1E1
50 Hz
150
50 H z
150
400
1 00 0
400
2500
1 00 0
5 00 0
2500
5000
Snubber circuit
IRK.F200.. Series
Snubber circuit
IRK.F200.. Series
R
C
V
= 10 ohm s
= 0.47
= 80% V
R
C
V
= 10 ohms
= 0.47
Sinusoidal pulse
= 85
s
s
D
s
s
Sinusoidal pulse
= 60
F
F
T
C
tp
C
tp
T
C
C
DRM
= 80% V
D
DRM
1E1
1E2
1E3
1E4
1E1
1E2
1E3
1E4
Pulse Basewidth ( s)
Pulse Basew idth ( s)
Fig. 11 - Frequency Characteristics
1E4
1E3
1E2
IRK.F200.. Series
Trapezoidal pulse
IRK.F200.. Series
Trapezoidal pulse
T
= 85 C di/dt 50A/ s
tp
C
tp
T
= 85 C di/dt 100A/ s
C
50 Hz
50 Hz
150
150
400
400
1 00 0
1 00 0
2500
2500
5 00 0
5000
Snubber circuit
Snubber circuit
R
C
V
= 10 ohms
= 0.47
s
s
R
C
V
= 10 ohm s
= 0.47
s
s
F
F
= 80% V
D
DRM
= 80% V
DRM
D
1E1
1E2
1E3
1E41E1
1E2
1E3
1E4
Pulse Basewidth ( s)
Pulse Basew idth ( s)
Fig. 12 - Frequency Characteristics
7
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IRK.F200.. Series
Bulletin I27099 rev. C 03/01
1E4
50 H z
50 Hz
150
150
400
400
1E3
1 00 0
1000
2500
2500
5 00 0
5000
Snubber circuit
Snubber circuit
IRK.F200.. Series
Trapezoidal pulse
IRK.F200.. Series
Trapezoidal pulse
R
C
V
= 10 ohm s
R
C
V
= 10 ohm s
s
s
s
= 0.47
F
= 0.47
F
s
D
T
= 60 C di/dt 50A/
s
T = 60 C di/dt 100A/ s
tp
tp
C
= 80% V
C
DRM
= 80% V
D
DRM
1E2
1E1
1E1
1E4
1E2
1E3
1E2
1E3
1E4
Pulse Basew idth ( s)
Pulse Basew idth ( s)
Fig. 13 - Frequency Characteristics
1E4
1E3
1E2
1E1
10 joules per pulse
10 joules per pulse
5
2.5
5
2.5
1
0.5
1
0.25
0.5
0.25
0.1
0.1
0.05
0.05
IRK.F200.. Series
Trapezoidal pulse
d i/dt 50A/
IRK.F200.. Series
Sinusoidal pulse
tp
s
tp
1E1
1E14
1E2
1E3
1E4
1E1
1E2
1E3
Pulse Basewidth ( s)
Pulse Basew idth ( s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100
10
1
Rectangular gate pulse
a) Recom mended load line for
rated di/dt : 10V, 10ohm s
b) Recom m ended load line for
<=30% rated di/dt : 10V, 20ohms
(1) PGM = 8W , tp = 25m s
(2) PGM = 20W , tp = 1m s
(3) PGM = 40W , tp = 5m s
(4) PGM = 80W , tp = 2.5ms
(a )
(b)
(1)
(2)
(3) (4)
VGD
IGD
IRK.F200.. Series
Frequency Limited by PG(AV)
10 100
0.1
0.01
0.1
1
Instantaneous G ate Current (A )
Fig. 15 - Gate Characteristics
8
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