IS611X [ETC]
PHOTON COUPLED BILATERAL ANALOG FET; 光子加上双边模拟FET
| 型号： | IS611X |
| 厂家： | 
ETC |
| 描述： | PHOTON COUPLED BILATERAL ANALOG FET |
| 文件： | 总3页 (文件大小：71K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IS610X, IS611X
IS610, IS611
PHOTON COUPLED BILATERAL
ANALOG FET
APPROVALS
Dimensions in mm
2.54
l
UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
1
2
6
5
7.0
6.0
l
VDE 0884 in 2 available lead forms : -
- STD
- G form
DESCRIPTION
3
4
7.62
max.
The IS610, IS611 are optically coupled isolators
consisting of infrared light emitting diode and a
symmetrical bilateral silicon photodetector. The
detector is electrically isolated from the input and
performs like an ideal isolated FET designed for
distortion-free control of low level ac and dc
analog signals.The IS610, IS611 are mounted in a
standard 6pin dual in line plastic package.
8.3 max.
5.1
max.
0.5
min.
3.9
3.1
15°
Max
0.25
0.48
APPLICATIONS (cont.)
As an Analog Signal Switch
FEATURES
l
Isolated sample and hold circuit
Multiplexed, optically isolated A/D conversion
l
Options :-
l
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
As a remote variable resistor
l
l
l
l
≤100Ω to ≥300MΩ
≥ 99.9% Linearity
≤15 pF Shunt Capacitance
≥100GΩ I/O Isolation Resistance
Storage Temperature
Operating Temperature
Lead Soldering Temperature
-55°C to + 150°C
-55°C to + 100°C
(1/16 inch (1.6mm) from case for 10 secs) 260°C
As an Analog Signal Switch
l
l
l
l
Extremely low Offset Voltage
60V pk-pk Signal Capability
No Charge Injection or Latchup
ton, toff ≤15µs
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
100mW
APPLICATIONS
As a remote variable resistor
l
l
l
Isolated variable attenuator
Automatic gain control
Active filter fine tuning / band switching
OUTPUT TRANSISTOR
Breakdown Voltage
Detector Current (continuous)
Power Dissipation
±30V
±100mA
300mW
OPTION G
8.3 max
OPTION SM
SURFACEMOUNT
1.2
0.6
1.4
0.9
POWER DISSIPATION
0.26
10.2
9.5
Total Power Dissipation
350mW
10.16
ISOCOM INC
1024 S.GreenvilleAve,Suite240,
Allen, TX75002 USA
ISOCOMCOMPONENTSLTD
Unit25B, ParkViewRoadWest,
Park View Industrial Estate, Brenda Road
Tel:(214)495-0755 Fax:(214)495-0901
e-mail info@isocom.com
Hartlepool,TS251YDEnglandTel:(01429)863609
Fax:(01429)863581 e-mail sales@isocom.co.uk
http://www.isocom.com
http://www.isocom.com
19/4/99
DB91069AAS/A2
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
1.1
1.75
10
V
V
µA
IF = 16mA
IR = 10µA
VR = 5V
5
Output
(either
polarity)
Breakdown Voltage - V( BR )46 (Note 2)
Off-state Dark Current - I46
30
V
I46 = 10µA,IF = 0
50
50
nA
V = 15V, IF = 0,
TA46= 25°C
µA
V = 15V, I = 0,
TA46= 100°C F
Off-state Resistance - r46
Capacitance - C46
300
ΜΩ
pF
V46 = 15V, I = 0
V46 = 0, IF =F0,
f = 1 MHz
15
Coupled On-state Resistance - r46 (Note 2)
IS611
170
200
Ω
Ω
IF = 16mA, I46 = 100µA
IF = 16mA, I46 = 100µA
IS610
On-state Resistance - r64 (Note 2)
IS611
IS610
170
200
Ω
Ω
IF = 16mA, I64 = 100µA
IF = 16mA, I64 = 100µA
Input to Output Isolation Voltage VISO 5300
7500
V
See note 1
See note 1
VIO = 500V (note 1)
VIO= 0, f =1MHz
VRMS
ΩPK
pF
Input-output Isolation Resistance R
1011
Input-output Capacitance
CIfSO
2
Turn-on Time
Turn-off Time
Resistance, non-linearity and asymmetry
ton
toff
25
25
0.1
µs
µs
%
IF= 16mA, V46 = 5V,
RL = 50Ω
IF= 16mA, f = 1kHz
I46= 25µA RMS
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
19/4/99
DB91069-AAS/A2
On-state Resistance vs. Ambient Temperature
Forward Current vs. Ambient Temperature
3
2
80
70
60
50
Normalized to
IF = 16mA
I46 = 25µA
TA = 25 °C
median
device
40
30
1
0.8
observed
range
20
0.6
0.4
10
0
-50 -25
0
25
50
75 100
-30
0
25
50
75
100 125
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
Region of Linear Resistance
Normalized Off-state current vs.
Ambient Temperature
100
10000
1000
100
100
40
20
maximum
RMS voltage
40
20
10
10
4
maximum
RMS current
4
Normalized to
V46 = 15V
IF = 0
10
2
0
2
0
TA = 25 °C
1.0
100
1000
10k
100k
0
25
50
75
100
Ambient temperature TA ( °C )
On-state resistance r (on) (Ω)
Resistive non-linearity vs.
D.C. Bias
Input Current vs. Input Voltage
100
5
4
40
20
10
-25°C
TA = 75°C
3
2
4
2
1
25°C
I = 10µA RMS
r46(on) = 200Ω
1
0
0.4
0.2
0.1
0
50 100 150 200 250 300 350
D.C. bias voltage V46 (mV)
DB91069-AAS/A2
0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6
Forward voltage VF (V)
19/4/99
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