IS62LV5128L-85B [ETC]
x8 SRAM ; X8 SRAM\n
| 型号： | IS62LV5128L-85B |
| 厂家： | 
ETC |
| 描述： | x8 SRAM
|
| 文件： | 总10页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
IS62LV5128L
IS62LV5128LL
512K x 8 LOW POWER and LOW Vcc
CMOS STATIC RAM
ISSI
MAY 2000
FEATURES
DESCRIPTION
• Access times of 70, 85 and 100 ns
The ISSI IS62LV5128L and IS62LV5128LL is a low
• CMOS low power operation:
— 120 mW (typical) operating
— 6 µW (typical) standby
voltage, 524,288 words by 8 bits, CMOS SRAM. It is
fabricated using ISSI’s low voltage, six transistor (6T),
CMOS technology. The device is targeted to satisfy the
demands of the state-of-the-art technologies such as
cell phones and pagers.
• Low data retention voltage: 2V (min.)
• Output Enable (OE) and Chip Enable
(CE) inputs for ease in applications
When CE is HIGH (deselected), the device assumes a
standbymodeatwhichthepowerdissipationcanbereduced
down with CMOS input levels. Additionally, easy memory
expansion is provided by using Chip Enable and Output
Enable inputs, CE and OE. The active LOW Write Enable (WE)
controls both writing and reading of the memory.
• TTL compatible inputs and outputs
• Fully static operation:
— No clock or refresh required
• Single 2.5V to 3.3V power supply
• Available in 36-pin mini BGA
The IS62LV5128L and IS62LV5128LL are available in a
36-pin mini BGA package.
FUNCTIONAL BLOCK DIAGRAM
512K x 8
MEMORY ARRAY
A0-A18
DECODER
VCC
GND
I/O
DATA
COLUMN I/O
I/O0-I/O7
CIRCUIT
CE
CONTROL
CIRCUIT
OE
WE
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. — 1-800-379-4774
1
Rev. A
06/01/00
IS62LV5128L
®
IS62LV5128LL
ISSI
PIN CONFIGURATION
36-pin mini BGA (B)
PIN DESCRIPTIONS
A0-A18
CE
Address Inputs
1
2
3
4
5
6
Chip Enable Input
Output Enable Input
Write Enable Input
Input/Output
OE
WE
I/O0-I/O7
NC
A
B
C
D
E
F
A0
I/O4
I/O5
GND
Vcc
I/O6
I/O7
A9
A1
A2
NC
WE
NC
A3
A4
A5
A6
A7
A8
I/O0
I/O1
Vcc
No Connection
Power
Vcc
GND
Ground
GND
I/O2
I/O3
A14
A18
CE
A17
A16
A12
OE
A15
A13
G
H
A10
A11
TRUTHTABLE
Mode
WE
CE
OE
I/O Operation
Vcc Current
Not Selected
Output Disabled H
Read
Write
X
H
L
L
L
X
H
L
High-Z
High-Z
DOUT
DIN
ISB1, ISB2
ICC
H
L
ICC
X
ICC
OPERATING RANGE
Range
Ambient Temperature
VCC
Commercial
0°C to +70°C
2.5V to 3.3V
Industrial
–40°C to +85°C
2.5V to 3.3V
2
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
06/01/00
IS62LV5128L
®
IS62LV5128LL
ISSI
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter
Value
–0.5 to Vcc + 0.5
–0.3 to +4.0
–40 to +85
–65 to +150
1
Unit
V
V
°C
°C
W
VTERM
VCC
Terminal Voltage with Respect to GND
Vcc related to GND
TBIAS
TSTG
PT
Temperature Under Bias
Storage Temperature
Power Dissipation
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause
permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of
this specification is not implied. Exposure to absolute maximum rating conditions for
extendedperiodsmayaffectreliability.
CAPACITANCE(1,2)
Symbol
CIN
Parameter
Conditions
VIN = 0V
Max.
Unit
pF
Input Capacitance
Output Capacitance
6
8
COUT
VOUT = 0V
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 3.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = 3.3V, IOH = –1.0 mA
VCC = 2.5V, IOH = –0.5 mA
2.2
2.0
—
—
V
VOL
Output LOW Voltage
VCC = 3.0V, IOL = 2.1 mA
VCC = 2.5V, IOL = 0.5 mA
—
—
0.4
0.4
V
VIH
VIL
ILI
Input HIGH Voltage
Input LOW Voltage(1)
Input Leakage
2.2
–0.2
–1
VCC + 0.3
V
V
µA
µA
0.4
1
1
GND ≤ VIN ≤ VCC
GND ≤ VOUT ≤ VCC, OUTPUTS Disabled
ILO
Output Leakage
–1
Note:
1. VIL = –3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — 1-800-379-4774
3
Rev. A
06/01/00
IS62LV5128L
®
IS62LV5128LL
ISSI
IS62LV5128L POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-70
Min. Max.
-85
Min. Max.
-100
Min. Max.
Symbol Parameter
Test Conditions
Unit
ICC
Vcc Dynamic
Operating
VCC = Max., CE = VIL
IOUT = 0 mA, f = fMAX
Com.
Ind.
—
—
45
50
—
—
40
45
—
—
35
40
mA
Supply Current
ICC1
ISB1
OperatingSupply
Current
V
CC = Max.,
Com.
Ind.
—
—
5
5
—
—
5
5
—
—
5
5
mA
I
OUT = 0 mA, f = 0
TTL Standby
Current
VCC = Max.,
VIN = VIH or VIL,
Com.
Ind.
—
—
0.4
1.0
—
—
0.4
1.0
—
—
0.4
1.0
mA
(TTL Inputs)
CE1 ≥ VIH or CE2 ≤ VIL, f = 0
ISB2
CMOS Standby VCC = Max., f = 0
Current CE1 ≥ VCC – 0.2V,
Com.
Ind.
—
—
15
15
—
—
15
15
—
—
15
15
µA
(CMOS Inputs) CE2 ≤ 0.2V,
or VIN ≥ VCC – 0.2V, VIN ≤ 0.2V
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
IS62LV5128LL POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
-70
Min. Max.
-85
Min. Max.
-100
Min. Max.
Symbol Parameter
Test Conditions
Unit
ICC
Vcc Dynamic
Operating
VCC = Max., CE = VIL
IOUT = 0 mA, f = fMAX
Com.
Ind.
—
—
45
50
—
—
40
45
—
—
35
40
mA
Supply Current
ICC1
ISB1
OperatingSupply
Current
V
CC = Max.,
Com.
Ind.
—
—
5
5
—
—
5
5
—
—
5
5
mA
I
OUT = 0 mA, f = 0
TTL Standby
Current
VCC = Max.,
VIN = VIH or VIL,
Com.
Ind.
—
—
0.4
1.0
—
—
0.4
1.0
—
—
0.4
1.0
mA
(TTL Inputs)
CE1 ≥ VIH or CE2 ≤ VIL, f = 0
ISB2
CMOS Standby VCC = Max., f = 0
Current CE1 ≥ VCC – 0.2V,
Com.
Ind.
—
—
5
5
—
—
5
5
—
—
5
5
µA
(CMOS Inputs) CE2 ≤ 0.2V,
or VIN ≥ VCC – 0.2V, VIN ≤ 0.2V
Note:
1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
4
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
06/01/00
IS62LV5128L
®
IS62LV5128LL
ISSI
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
-70
Min.
-85
Min.
-100
Min.
Symbol
tRC
Parameter
Max.
—
Max.
—
Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
Read Cycle Time
Address Access Time
Output Hold Time
CE Access Time
OE Access Time
OE to High-Z Output
OE to Low-Z Output
CE to Low-Z Output
CE to High-Z Output
70
—
10
—
—
—
5
85
—
15
—
—
—
5
100
—
15
—
—
—
5
—
100
—
tAA
70
—
85
—
tOHA
tACE
tDOE
70
35
25
—
85
40
25
—
100
50
(2)
tHZOE
30
(2)
tLZOE
—
(2)
tLZCE
10
0
—
10
0
—
10
0
—
(2)
tHZCE
25
25
30
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.3V, input pulse levels of 0.4V to 2.2V and
outputloadingspecifiedinFigure1.
2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100ꢀ tested.
AC TEST CONDITIONS
Parameter
Input Pulse Level
Input Rise and Fall Times
Unit
0.4V to 2.2V
5 ns
Input and Output Timing
and Reference Level
1.5V
Output Load
See Figures 1 and 2
AC TEST LOADS
3070 Ω
3070 Ω
2.8V
2.8V
OUTPUT
OUTPUT
3150 Ω
3150 Ω
30 pF
Including
jig and
5 pF
Including
jig and
scope
scope
Figure 1
Figure 2
Integrated Silicon Solution, Inc. — 1-800-379-4774
5
Rev. A
06/01/00
IS62LV5128L
®
IS62LV5128LL
ISSI
AC WAVEFORMS
READ CYCLE NO. 1(1,2)
t
RC
ADDRESS
DOUT
t
AA
t
OHA
t
OHA
DATA VALID
READ CYCLE NO. 2(1,3)
tRC
ADDRESS
OE
tAA
tOHA
tHZOE
tDOE
tLZOE
CE
t
ACE
LZCE
HIGH-Z
t
HZCE
t
DOUT
DATA VALID
Notes:
1. WE is HIGH for a Read Cycle.
2. The device is continuously selected. OE, CE = VIL.
3. Address is valid prior to or coincident with CE LOW transitions.
6
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
06/01/00
IS62LV5128L
®
IS62LV5128LL
ISSI
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range, Standard and Low Power)
-70
-85
-100
Symbol
tWC
Parameter
Min. Max.
Min. Max.
Min. Max.
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Write Cycle Time
70
65
65
0
—
—
—
—
—
—
—
—
33
—
85
70
70
0
—
—
—
—
—
—
—
—
35
—
100
80
80
0
—
—
—
—
—
—
—
—
40
—
tSCE
tAW
CE to Write End
Address Setup Time to Write End
Address Hold from Write End
Address Setup Time
tHA
tSA
0
0
0
(4)
tPWE
WE Pulse Width
60
30
0
60
35
0
80
40
0
tSD
tHD
Data Setup to Write End
Data Hold from Write End
WE LOW to High-Z Output
WE HIGH to Low-Z Output
(2)
tHZWE
—
5
—
5
—
5
(2)
tLZWE
Notes:
1. Testconditionsassumesignaltransitiontimesof5nsorless,timingreferencelevelsof1.3V,inputpulselevelsof0.4Vto2.2VandoutputloadingspecifiedinFigure1.
2. Tested with the load in Figure 2. Transition is measured 500 mV from steady-state voltage. Not 100ꢀ tested.
3. TheinternalwritetimeisdefinedbytheoverlapofCELOWandWE LOW. AllsignalsmustbeinvalidstatestoinitiateaWrite,butanyonecangoinactivetoterminatethe
Write. TheDataInputSetupandHoldtimingarereferencedtotherisingorfallingedgeofthesignalthatterminatestheWrite.
4. Tested with OE HIGH.
AC WAVEFORMS
WRITE CYCLE NO. 1 (CE Controlled, OE = HIGH or LOW)
t
WC
ADDRESS
t
HA
t
SCE
CE
tAW
(4)
t
PWE
WE
DOUT
DIN
t
SA
tHZWE
t
LZWE
HIGH-Z
DATA UNDEFINED
tSD
t
HD
DATA-IN VALID
Integrated Silicon Solution, Inc. — 1-800-379-4774
7
Rev. A
06/01/00
IS62LV5128L
®
IS62LV5128LL
ISSI
WRITE CYCLE NO. 2 (WE Controlled: OE is HIGH During Write Cycle)
t
WC
ADDRESS
OE
t
HA
tSCE
CE
tAW
t
PWE1, 2
WE
t
SA
tHZWE
t
LZWE
HIGH-Z
SD
DOUT
DIN
DATA UNDEFINED
t
tHD
DATA-IN VALID
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
t
WC
ADDRESS
OE
t
HA
tSCE
CE
tAW
t
PWE1, 2
WE
t
SA
tHZWE
t
LZWE
HIGH-Z
SD
DOUT
DIN
DATA UNDEFINED
t
tHD
DATA-IN VALID
8
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
06/01/00
IS62LV5128L
®
IS62LV5128LL
ISSI
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter
Test Condition
Min. Max.
Unit
VDR
Vcc for Data Retention
Data Retention Current
See Data Retention Waveform
Vcc = 2.0V, CE ≥ Vcc – 0.2V
2.0
3.6
V
IDR
Com.
Ind.
—
—
2
5
µA
µA
tSDR
tRDR
Data Retention Setup Time See Data Retention Waveform
Recovery Time See Data Retention Waveform
0
—
—
ns
ns
tRC
DATA RETENTION WAVEFORM (CE Controlled)
t
Data Retention Mode
t
RDR
SDR
V
CC
DR
3.0V
2.2V
V
CE ≥ V
CC
- 0.2V
CE
GND
Integrated Silicon Solution, Inc. — 1-800-379-4774
9
Rev. A
06/01/00
IS62LV5128L
®
IS62LV5128LL
ISSI
ORDERING INFORMATION
IS62LV5128L
Commercial Range: 0°C to +70°C
IS62LV5128LL
Commercial Range: 0°C to +70°C
Speed (ns) Order Part No.
Package
Speed (ns) Order Part No.
Package
70
85
IS62LV5128L-70B
IS62LV5128L-85B
IS62LV5128L-10B
mini BGA (6mm x 8mm)
mini BGA (6mm x 8mm)
mini BGA (6mm x 8mm)
70
85
IS62LV5128LL-70B
IS62LV5128LL-85B
IS62LV5128LL-10B
mini BGA (6mm x 8mm)
mini BGA (6mm x 8mm)
mini BGA (6mm x 8mm)
100
100
Industrial Range: –40°C to +85°C
Industrial Range: –40°C to +85°C
Speed (ns) Order Part No.
Package
Speed (ns) Order Part No.
Package
70
85
IS62LV5128L-70BI
IS62LV5128L-85BI
IS62LV5128L-10BI
mini BGA (6mm x 8mm)
mini BGA (6mm x 8mm)
mini BGA (6mm x 8mm)
70
85
IS62LV5128LL-70BI
IS62LV5128LL-85BI
IS62LV5128LL-10BI
mini BGA (6mm x 8mm)
mini BGA (6mm x 8mm)
mini BGA (6mm x 8mm)
100
100
®
ISSI
IntegratedSiliconSolution, Inc.
2231 Lawson Lane
Santa Clara, CA 95054
Tel: 1-800-379-4774
Fax: (408) 588-0806
E-mail: sales@issi.com
www.issi.com
10
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
06/01/00
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