ISTS149 [ETC]
;
| 型号： | ISTS149 |
| 厂家： | 
ETC |
| 描述： | 传感器 换能器 |
| 文件： | 总3页 (文件大小：50K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ISTS149, ISTS703A, ISTS708
REFLECTIVE OPTICAL
SWITCHES
ISTS708
Dimensions in mm
9.7
DESCRIPTION
1
2
3
4
The ISTS149, ISTS703A, ISTS708 each consist
of an infrared emitting diode and a NPN silicon
photo transistor mounted side by side on
converging axes in a polycarbonate housing. The
package is designed to optimise the mechanical
resolution, coupling efficiency, ambient light
rejection, cost and reliability.The phototransistor
responds to radiation from the emitter only when
a reflective object passes within its field of view
5.1
point of
optimum
response
17.8
3.18 nom.
15.5
15.0
3.3
3.0
0.5
sq.
2.54
4.1
3.5
FEATURES
5.1
l
Phototransistor output
l
Opaque housing provides improved
visible light rejection
ISTS149
12.3
9.5
l
l
l
Three available package types
Adjustable side-mounting provision
Also available with flying leads, with or
without connector, supplied as required
1
2
3
4
5.1
17.8
point of
optimum
response
3.18 nom.
APPLICATIONS
l
Copiers, Printers, Facsimilies, Record
2.54
2.3
Players, Casette Decks, Optoelectronic
Switches, VCR's,
4.6
8.9
0.5
sq.
2.54
3.8
ISTS703A
9.15
4
3
2
1
5.1
4
3
1
2
17.0
point of
optimum
response
4.45 nom.
1.70
1.45
15.0
8.0
5.5
0.5
sq.
22.8
3.3
3.0
2.54
ISOCOM INC
ISOCOM COMPONENTS LTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1YD
720 E., Park Boulevard, Suite 104,
Plano, TX 75074 USA
Tel: (972) 423-5521
Fax: (972) 422-4549
Tel: (01429) 863609 Fax :(01429) 863581
24/9/97
DB92074-AAS/A1
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
Operating Temperature
Lead Soldering Temperature
-40°C to + 85°C
-25°C to + 85°C
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
3V
90mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO
Emitter-collector Voltage BVECO
Collector Current I
30V
5V
20mA
50mW
Power Dissipation C
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
Reverse Voltage (VR)
Reverse Current (IR)
1.6
V
V
IF = 40mA
IR = 100µA
VR = 3V
3
100 µA
Output
Collector-emitter Breakdown (BVCEO
)
30
5
V
IC = 1mA
( Note 1 )
Emitter-collector Breakdown (BVECO
Collector-emitter Dark Current (ICEO
)
V
IE = 100µA
)
100 nA
VCE = 15V
Coupled On-State Collector Current IC ( ON)
( Note 1 )
ISTS149
ISTS703A
ISTS708
25
µA
µA
µA
40mA IF , 5V VCE
D(mm) = 3.8mm
40mA IF , 5V VCE
D(mm) = 3.8mm
40mA IF , 5V VCE
D(mm) = 3.8mm
200
10
Collector-emitter Saturation VoltageVCE(SAT)
ISTS149
ISTS703A
ISTS708
0.4
0.4
0.4
V
V
V
40mA IF , 3µA IC
D(mm) = 3.8mm
40mA IF , 100µA IC
D(mm) = 3.8mm
40mA IF , 3µA IC
D(mm) = 3.8mm
Note 1
Special Selections are available on request. Please consult the factory.
24/9/97
DB92074-AAS/A1
Collector Power Dissipation vs. Ambient Temperature
Normalized Output Current vs.
Collector-emitter Voltage
60
10
4
2
50
40
IF = 60mA
40mA
1
20mA
0.4
0.2
0.1
30
20
10mA
Normalized to
IF = 40mA
VCE = 5V
0.04
Pulsed
10
0
PW = 100µs
PRR = 100pps
0.02
0.01
TA = 25°C
1
0.1
10
100
-25
0
25
50
75
100 125
Collector-emitter voltage VCE ( V )
Ambient temperature TA ( °C )
Forward Current vs. Ambient Temperature
Normalized Output Current vs.
Forward Current
2.0
1.8
1.6
1.4
80
70
60
Normalized to
IF = 40mA
VCE = 0.4V
Pulsed
TA = 25°C
PW = 100µs
PRR = 100pps
50
40
1.2
1.0
0.8
0.6
30
20
0.4
0.2
0
10
0
1
2
5
10
20
50
-25
0
25
50
75
100 125
Ambient temperature TA ( °C )
Forward current IF (mA)
Normalized Output Current
vs. Ambient Temperature
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.28
0.24
1.5
1.0
IF = 40mA
VCE = 5V
IF = 40mA
IC = 100µA
0.20
0.16
0.12
0.08
0.5
0
0.04
0
-25
0
25
50
75
100
-25
0
25
50
75
100
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
DB92074-AAS/A1
24/9/97
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