IT129/71 [ETC]
TRANSISTOR | BJT | PAIR | NPN | 45V V(BR)CEO | 100MA I(C) | TO-71 ; 晶体管| BJT | PAIR | NPN | 45V V（ BR ） CEO | 100MA I（C ） | TO- 71\n
| 型号： | IT129/71 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PAIR | NPN | 45V V(BR)CEO | 100MA I(C) | TO-71
|
| 文件： | 总2页 (文件大小：31K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRODUCT SPECIFICATIONS
SEMICONDUCTOR TECHNOLOGY, INC.
3131 S. E. JAY STREET, STUART, FL 34997
PH: (561)283-4500 FAX: (561)286-8914
Website: http://www.semi -tech-inc.com
TYPE: IT129/71
CASE OUTLINE:
TO -71
NPN SILICON DUAL DIFFERENTIAL TRANSISTOR
ABSOLUTE MAXIMUM RATING:
Collector to Base
BV
45**
7.0
Vdc
Vdc
CBO
Emitter to Base
BV
EBO
Collector to Emitter
Collector Current
BV
45
Vdc
CEO
I
100
mA dc
Watts
Watts
C
P
Power Dissipation T = 25 °C
D
A
P
0.5 (Both Sides)
-65 to +200
Power Dissipation T = 25 °C
D
C
Storage Temperature
T
°C
°C
°C
stg
Operating Temperature
Lead Temperature From Case
T
-65 to +200
J
T
L
ELECTRICAL CHARACTERISTICS TA @ 25 ° C
PARAMETERS
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
Collector to Collector Voltage
BV
70
Vdc
CCO
Emitter to Base Voltage
Collector to Emitter Voltage
Collector to Collector Voltage
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
BV
IE = 10µA
IC=1.0mA
7.0
45
Vdc
Vdc
Vdc
EBO
BV
CEO
BV
100
IC=1.0mA
C1C2
I
VCB=30V
0.1
0.1
nA
CBO
I
VCB=30V, TA=150°C
mA
mA
mA
nA
-
CBO
I
CEX
I
CEX
I
VEB=5.0V
0.1
EBO
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
D.C. Current Gain Pulsed*
Saturation Voltage*
h
70
100
40
IC=10mA, VCE=5.0V
FE
h
IC=1.0mA, VCE=5.0V
-
FE
h
-
IC=1.0mA, VCE=5.0V, TA= -55°C
IC=10mA, VCE=5.0V
FE
h
115
50
-
FE
h
IC=50mA, VCE=5.0V
-
FE
V
IC=10mA, IB=1.0mA
0.3
0.6
Vdc
Vdc
Vdc
Vdc
Vdc
-
CE(sat)
Saturation Voltage*
V
IC=50mA, IB=5.0mA
CE(sat)
Base Emitter Voltage*
V
BE(sat)
Base Emitter Voltage*
V
IC=10mA, VCE=5.0V
IC=50mA, VCE=5.0V
0.9
1.0
BE(on)
Base Emitter Voltage*
V
BE(on)
Current Gain at F =
h
FE
Emitter Transition Capacitance
Collector to Collector Capacitance
Collector to Collector Leakage Current
Output Capacitance
C
pF
pF
nA
pF
TE
C
C1-C2
I
C1-C2
C
VCB=20V
3.0
ob
Frequency Cutoff
Transition Frequency
f & b
MHz
MHz
f
10
220
IC=10mA, VCE=5.0V
IC=1.0mA, VCE=5.0V
T
Notes: *Pulse Width £300usec 2% Duty Cycle, ** IC=10mA
Page 1 of 2
TYPE:
IT129/71
SMALL SIGNAL CHARACTERISTICS
Input Impedance
SYMBOL
MIN
TYP
MAX
UNITS
Ohms
Voltage Feedback Ratio
X10-4
nA
Base Current Differential
IC=10mA, VCE=5.0V
20
| IB1 – IB2
|
Base Current Differential
IC = 1.0mA VCE = 5.0V
DC Current Gain Ratio
| IB1
I
|
2.0
mA
–
B2
h
/h
FE1 FE2
Base-Emitter Voltage Differential
IC=1.0mA, VCE=5.0V
Base-Emitter Voltage Differential Change Due to Temp
IC=1.0mA, VCE=5.0V
5.0
20
mV
½V
-V
BE1 BE2½
D(V
-V
)
mV/°C
BE1 BE2
TA= -55°C to +125°C
SWITCHING CHARACTERISTICS
Turn-On Time
SYMBOL
MIN
TYP
MAX
UNITS
t
on
ns
ns
Turn-Off Time
t
off
Delay Time
Rise Time
t
ns
ns
ns
ns
d
t
r
Storage Time
Fall Time
t
s
t
f
FUNCTIONAL TEST
Common-Emitter Amplifier Power Gain
Power Output
SYMBOL
MIN
TYP
MAX
UNITS
dB
GPE
Pout
Watt
%
Collector Efficiency
h
Power Output
Pout
Watt
Page 2 of 2
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