IXBH9N140 [ETC]

TRANSISTOR | IGBT | N-CHAN | 1.4KV V(BR)CES | 9A I(C) | TO-247AD ; 晶体管| IGBT | N -CHAN | 1.4KV V( BR ) CES | 9A I(C ) | TO- 247AD\n
IXBH9N140
型号: IXBH9N140
厂家: ETC    ETC
描述:

TRANSISTOR | IGBT | N-CHAN | 1.4KV V(BR)CES | 9A I(C) | TO-247AD
晶体管| IGBT | N -CHAN | 1.4KV V( BR ) CES | 9A I(C ) | TO- 247AD\n

晶体 晶体管 双极性晶体管
文件: 总4页 (文件大小:65K)
下载:  下载PDF数据表文档文件

IXBH9N140G

High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

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33 IXYS

IXBH9N140G

High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

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18 IXYS

IXBH9N160

TRANSISTOR | IGBT | N-CHAN | 1.6KV V(BR)CES | 9A I(C) | TO-247AD

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131 ETC

IXBH9N160G

High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

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156 IXYS

IXBH9N160G

High Voltage BIMOSFET Monolithic Bipolar MOS Transistor

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221 IXYS

IXBJ40N140

TRANSISTOR | IGBT | N-CHAN | 1.4KV V(BR)CES | 33A I(C) | TO-268

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13 ETC

IXBJ40N160

TRANSISTOR | IGBT | N-CHAN | 1.6KV V(BR)CES | 33A I(C) | TO-268

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22 ETC

IXBK55N300

High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor

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45 IXYS

IXBK64N250

Insulated Gate Bipolar Transistor,

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0 LITTELFUSE

IXBK64N250

Insulated Gate Bipolar Transistor, 75A I(C), 2500V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN

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1 IXYS

IXBK75N170

IGBT 1700V 200A 1040W TO264

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0 IXYS

IXBK75N170A

BiMOSFETTM Monolithic Bipolar MOS Transistor

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50 IXYS

IXBL64N250

Insulated Gate Bipolar Transistor, 116A I(C), 2500V V(BR)CES, N-Channel, ISOPLUS, I5PAK-4

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0 LITTELFUSE

IXBN42N170A

Insulated Gate Bipolar Transistor, 42A I(C), 1700V V(BR)CES, N-Channel, MINIBLOC-4

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0 IXYS

IXBN42N170A

Insulated Gate Bipolar Transistor,

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0 LITTELFUSE