关闭背景特效

IXSH35N100 [ETC]

TRANSISTOR | IGBT | N-CHAN | 1KV V(BR)CES | 35A I(C) | TO-247AD ; 晶体管| IGBT | N -CHAN | 1KV V（ BR ） CES | 35A I（C ） | TO- 247AD\n

IXSH35N100


元器件型号：	IXSH35N100
生产厂家：	ETC
描述和应用：	TRANSISTOR \| IGBT \| N-CHAN \| 1KV V(BR)CES \| 35A I(C) \| TO-247AD 晶体管\| IGBT \| N -CHAN \| 1KV V（ BR ） CES \| 35A I（C ） \| TO- 247AD\n 晶体晶体管双极性晶体管
PDF文件：	总26页 (文件大小：756K)
下载文档：	下载PDF数据表文档文件
型号参数：IXSH35N100参数

IXSH35N100A

High speed IGBT

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28 IXYS

IXSH35N120A

High Voltage, High speed IGBT

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55 IXYS

IXSH35N120AU1

Insulated Gate Bipolar Transistor, 70A I(C), N-Channel, TO-247AD,

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0 IXYS

IXSH35N120B

IGBT

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29 IXYS

IXSH35N120B

IGBT

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27 IXYS

IXSH35N135A

TRANSISTOR | IGBT | N-CHAN | 1.35KV V(BR)CES | 70A I(C) | TO-247AD

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20 ETC

IXSH35N140A

High Voltage, High speed IGBT - Short Circuit SOA Capability

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67 IXYS

IXSH40N60

Low VCE(sat) IGBT, High Speed IGBT

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29 IXYS

IXSH40N60

High Speed IGBT

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16 IXYS

IXSH40N60A

Low VCE(sat) IGBT, High Speed IGBT

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19 IXYS

IXSH40N60B

High Speed IGBT

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50 IXYS

IXSH45N100

Low VCE(sat) IGBT - Short Circuit SOA Capability

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37 IXYS

IXSH45N120

High Voltage, Low VCE(sat) IGBT

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133 IXYS

IXSH45N120B

High Voltage IGBT S Series - Improved SCSOA Capability

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19 IXYS

IXSH50N60B

Short Circuit SOA Capability

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38 IXYS

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