JANTX2N3439 [ETC]
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 1A I(C) | TO-5 ; 晶体管| BJT | NPN | 350V V（ BR ） CEO | 1A I（C ） | TO- 5\n
| 型号： | JANTX2N3439 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 1A I(C) | TO-5
|
| 文件： | 总21页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCH-POUND
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 8 October 2002.
MIL-PRF-19500/368F
8 July 2002
SUPERSEDING
MIL-PRF-19500/368E
24 August 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
TYPES: 2N3439, 2N3439L, 2N3439UA, 2N3440, 2N3440L AND 2N3440UA,
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for NPN, silicon, low-power, high voltage
transistors. Four levels of product assurance are provided for each encapsulated device types as specified in
MIL-PRF-19500, and two levels of product assurance for each unencapsulated device type die.
* 1.2 Physical dimensions. See figure 1 (similar to TO-5 and TO-39), figure 2 (JANHCA and JANKCA (A versions)),
figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount versions).
* 1.3 Maximum ratings. Unless otherwise specified, TA = +25°C.
Types
P
P
V
V
V
I
T
and T
OP
(1)
(2)
R
θJA
T
T
CBO
EBO
CEO
C
STG
T
= +25°C
T
= +25°C
C
A
W
W
V dc
450
V dc
7
V dc
350
A dc
1.0
°C
°C/W
2N3439, 2N3439L,
2N3439UA
0.8
5.0
-65 to +200
-65 to +200
325
2N3440, 2N3440L
2N3440UA
0.8
5.0
300
7
250
1.0
325
(1) Derate linearly 5.7 mW/°C for TA > +60°C.
(2) Derate linearly 28.6 mW/°C for TC > +25°C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P. O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/368F
1.4 Primary electrical characteristics.
hFE2 (1)
hFE1 (1)
|hfe|
Cobo
VBE(sat) (1)
VCE(sat)
VCE = 10 V
dc
IC = 2 mA dc
VCE = 10 V dc
IC = 20 mA dc
V
CE = 10 V dc
V
CB = 10 V dc
IC = 50 mA dc
IB = 4 mA dc
IC = 50 mA dc
IB = 4 mA dc
IC = 10 mA dc
f = 5 MHz
IE = 0
100 kHz ≤ f ≤ 1
MHz
pF
10
V dc
1.3
V dc
0.5
Min
Max
30
40
160
3
15
(1) Pulsed, (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
HANDBOOK
DEPARTMENT OF DEFENSE
MIL-HDBK-6100 - List of Case Outlines and Dimensions for Discrete Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
2
MIL-PRF-19500/368F
FIGURE 1. Physical dimensions (similar to TO-5 and TO-39).
3
MIL-PRF-19500/368F
Dimensions
Symbol
Notes
Inches
Millimeters
Min
Min
.305
.240
.335
.016
Max
.335
.260
.370
.021
Max
8.51
6.60
9.40
0.53
CD
CH
HD
LD
LL
L1
LU
M
7.75
6.10
8.51
0.41
3, 10
See notes 10, 12, and 13
.050
1.27
0.48
11
.016
.019
0.41
4, 10
.1414 Nom
.0707 Nom
.100
3.591 Nom
1.796 Nom
2.54
7
7
5
6
9
N
P
Q
TL
TW
.029
.028
.045
.034
0.74
0.71
1.14
0.86
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Measured in the zone beyond .250 inch (6.35 mm) from the seating plane.
4. Measured in the zone .50 inch (1.27 mm) from the seating plane.
5. Variations on dimension CD in this zone shall not exceed .010 inch (0.25 mm).
6. Outline in this zone is not controlled.
7. When measured in a gauging plane .054 +.001, -.000 inch (1.37 +0.03, - 0.00 mm) below the seating plane of
the transistor, maximum diameter leads shall be within .007 inch (0.18 mm) of their true location relative to a
maximum width tab. Smaller diameter leads shall fall within the outline of the maximum diameter lead
tolerance.
8. The collector shall be electrically connected to the case.
9. Measured from the maximum diameter of the actual device.
10. All three leads (see 3.4.1).
11. Diameter of leads in this zone is not controlled.
12. For transistor types 2N3439 and 2N3440, L = .500 inch (12.70 mm) minimum, and .750 inch (19.05 mm)
maximum.
13. For transistor types 2N3439L and 2N3440L, L = 1.500 inches (38.10 mm) minimum, and 1.750 inches
(44.45 mm) maximum.
FIGURE 1. Physical dimensions - Continued.
4
MIL-PRF-19500/368F
Ltr
Inches
Max
Millimeters
Min
Min
.038
.038
Max
1.12
1.12
A
C
.044
0.97
0.97
.044
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The physical characteristics of the die thickness are, .006 inch (0.15 mm) to .012 inch (0.30 mm).
Metallization, top: Al = 17,500 Å minimum, 20,000 Å nominal.
Back: Au = 2,500 Å minimum, 3,000 Å nominal.
Bonding pad: B = .004 inch (0.10 mm) by .005 inch (0.13 mm).
E = .004 inch (0.10 mm) by .005 inch (0.13 mm).
4. Backside is collector.
5. Requirements in accordance with MIL-PRF-19500 are performed in a TO-5 package.
* FIGURE 2. Physical dimensions JANHCA and JANKCA (die) A versions.
5
MIL-PRF-19500/368F
1. Chip size................................. .040 x .040 inch ±.002 inch (1.02 mm x 1.02 mm ±0.05 mm).
2. Chip thickness........................ .010 ± .0015 inch nominal (0.254 mm ±0.038 mm).
3. Top metal................................ Aluminum 30,000Å minimum, 33,000Å nominal.
4. Back metal............................... A. Al/Ti/Ni/Ag 12kÅ/3kÅ/7kÅ/7kÅminimum,15kÅ/ 5kÅ/10kÅ/10kÅ nominal.
B. Gold 2.500Å minimum, 3000Å nominal.
5. Backside................................. Collector.
6. Bonding pad........................... B = .005 x .008 inch (0.127 mm x 0.203 mm).
E = .010 x .007 inch (0.254 mm x 0.178 mm).
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
FIGURE 3. Physical dimensions JANHCB and JANKCB (die) B versions.
6
MIL-PRF-19500/368F
Dimensions
Millimeters
Symbol
Inches
Min
.061
.029
.022
Note
3
Max
.075
.041
.028
Min
1.55
0.74
0.56
Max
1.90
1.04
0.71
A
A1
B1
B2
B3
D
D1
D2
D3
E
E3
L1
L2
L3
.075 REF
1.91 REF
.006
.145
.045
.022
.155
.055
0.15
3.68
1.14
0.56
3.93
1.39
5
.0375 BSC
.952 BSC
.155
.225
.225
.048
.088
.007
3.93
5.71
5.71
1.22
2.23
0.18
.215
5.46
.032
.072
.003
0.81
1.83
0.08
5
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Dimension "A" controls the overall package thickness. When a window lid is used, dimension "A" must
increase by a minimum of .010 inch (0.254 mm) and a maximum of .040 inch (1.020 mm).
4. The corner shape (square, notch, radius, etc.) may vary at the manufacturer's option, from that shown on the
drawing.
5. Dimensions "B3" minimum and "L3" minimum and the appropriately castellation length define an unobstructed
three-dimensional space traversing all of the ceramic layers in which a castellation was designed.
(Castellations are required on bottom two layers, optional on top ceramic layer.) Dimension "B3" maximum
and "L3" maximum define the maximum width and depth of the castellation at any point on its surface.
Measurement of these dimensions may be made prior to solder dipping.
* FIGURE 4. Physical dimensions, surface mount (2N3439UA, 2N3440UA) version.
7
MIL-PRF-19500/368F
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
* 3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500, MIL-HDBK-6100 and on figure 1 (similar to TO- 5 and TO-39), figure 2 (JANHCA and JANKCA, (A
versions)), figure 3 (JANHCB and JANKCB (B versions)), and figure 4 (2N3439UA and 2N3440UA surface mount
versions).
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I herein.
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking
may be omitted from the body, but shall be retained on the initial container.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and table II
herein.
* 4.2.1 Group E qualification. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the associated specification that did not request the
performance of table II tests, the tests specified in table II herein shall be performed by the next inspection lot to this
revision to maintain qualification.
8
MIL-PRF-19500/368F
* 4.3 Screening (JANS, JANTXV, and JANTX levels only). Screening shall be in accordance with MIL-PRF-19500
and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that
exceed the limits of table I herein shall not be acceptable.
Screen
Measurement
(see table IV
of MIL-PRF-19500)
JANS level
Thermal impedance (see 4.3.3)
Hermetic seal (optional)
JANTX and JANTXV levels
Thermal impedance (see 4.3.3)
(1)
3c
7
9
Not applicable
I
and h
FE1
CBO1
10
11
48 hours minimum
; h ; ∆I
48 hours minimum
I
I
and h
FE1
= 100 percent of initial value
CB01
CBO1 FE1
CBO1
or 0.5 µA dc, whichever is greater;
∆h = ± 15 percent of initial value.
FE1
12
13
See 4.3.2, 240 hours minimum
See 4.3.2, 80 hours minimum
Subgroup 2 of table I herein;
Subgroups 2 and 3 of table I herein;
∆I
= 100 percent of initial value or 200 nA
∆I
= 100 percent of initial value or 200 nA dc,
CB01
CB01
dc, whichever is greater;
whichever is greater;
∆h = ± 15 percent of initial value.
∆h = ± 15 percent of initial value.
FE1
FE1
14
Optional
Optional (1)
(1) Hermetic seal test shall be performed in either screen 7 or screen 14.
4.3.1 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500. As a minimum, die shall be 100 percent probed to ensure the assembled chips will meet the
requirements of table I, group A, subgroup 2.
4.3.2 Power burn-in conditions. Power burn-in conditions are as follows: VCB = 10 - 30 V dc. Power shall be
applied to achieve TJ = +135°C minimum using a minimum PD = 75 percent of PT maximum rated as defined in 1.3.
4.3.3 Thermal impedance (ZθJX measurements). The ZθJX measurements shall be performed in accordance with
method 3131 MIL-STD-750. Read and record data (ZθJX) shall be supplied to the qualifying activity on one lot
(random sample of 500 devices minimum) prior to shipment. The following conditions shall apply.
a. IH forward heating current ----------- 250 mA.
b. tH heating time -------------------------- 10 ms.
c. IM measurement current -------------- 10 mA.
d. tMD measurement delay time ------- 30 - 60 µs.
e. VCE collector-emitter voltage ------- 10 V dc minimum.
The maximum limit for ZθJX under these test conditions are ZθJX (max) = 20 °C/W.
9
MIL-PRF-19500/368F
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein. If alternate screening is being performed in accordance with MIL-PRF-19500, a sample of
screened devices shall be submitted to and pass the requirements of group A1 and A2 inspection only (table VIb,
group B, subgroup 1 is not required to be performed again if group B has already been satisfied in accordance with
4.4.2).
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup testing in VIa (JANS) of 4.4.2.1 herein. Electrical measurements (end-points) requirements shall be in
accordance with table I, group A, subgroup 2 herein. Delta requirements shall be in accordance with 4.5.3 herein.
See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B testing. Electrical measurements (end-points)
requirements shall be in accordance with table I, group A, subgroup 2 herein. Delta requirements shall be in
accordance with 4.5.3 herein.
* 4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
B4
Method
1037
Condition
VCB = 10 V dc, 2,000 cycles.
B5
1027
VCB = 10-30 V dc; PD ≥ 100 percent of maximum rated PT (see 1.3).
(NOTE: If a failure occurs, resubmission shall be at the test conditions of the
original sample.)
Option 1: 96 hrs min, sample size in accordance with table Via of
MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hrs min., sample size = 45, c = 0; adjust TA or PD to achieve
TJ = +225°C minimum.
10
MIL-PRF-19500/368F
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
1
Method Condition
1039
1039
1032
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power shall be applied to
achieve TJ = +150°C minimum using a minimum of PD = 75 percent of maximum rated PT as
defined in 1.3. n = 45 devices, c = 0.
2
3
The steady-state life test of step 1 shall be extended to 1,000 hours for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production, however,
group B, step 2 shall not be required more than once for any single wafer lot. n = 45, c = 0.
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a. For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers (or
from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each inspection
lot. See MIL-PRF-19500.
b. Must be chosen from an inspection lot that has been submitted to and passed table I, group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX, and
JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and
JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in
accordance with table I, group A, subgroup 2 and 4.5.3 herein.
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup
C2
Method
2036
Condition
Test condition E, except the UA package.
C6
1026
1,000 hours at VCB = 10 V dc; power shall be applied to achieve
TJ = +150°C minimum and a minimum of PD = 75 percent of maximum
rated PT as defined in 1.3.
* 4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
2036
Condition
C2
C5
C6
Test condition E.
See 4.5.2.
3131
Not applicable.
4.4.3.3 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any lot
containing the intended package type and lead finish procured to the same specification which is submitted to and
passes group A tests for conformance inspection. Testing of a subgroup using a single device type enclosed in the
intended package type shall be considered as complying with the requirements for that subgroup.
11
MIL-PRF-19500/368F
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified in table III herein. Electrical
measurements (end-points) shall be in accordance with table I, group A, subgroup 2 herein. Delta measurements
shall be in accordance with the steps of 4.5.3.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of
MIL-STD-750.
4.5.2 Thermal resistance. Thermal resistance measurements shall be conducted in accordance with method 3131
of MIL-STD-750. The following conditions shall apply:
a. Collector current magnitude during power application shall be 150 mA dc for RθJC
b. Collector emitter voltage magnitude shall be 10 V dc.
.
c. Reference temperature measuring point shall be the case.
d. Reference temperature measuring point shall be +25°C ≤ TR ≤ +35°C. The chosen reference
temperature shall be recorded before the test is started.
e. Mounting arrangement shall be with heat sink to case for RθJC
.
Maximum limit shall be RθJC = 35°C/W.
* 4.5.3 Delta requirements. Delta requirements shall be as specified below:
Step
Inspection
MIL-STD-750
Conditions
Symbol
Unit
Method
3036
1
Collector-base cutoff
current
Bias condition D,
VCB = 360 V dc for 2N3439, 2N3439L,
2N3439UA
100 percent of initial
value or 200 nA dc,
whichever is greater.
∆ICB01
(1)
VCB = 250 V dc for 2N3440, 2N3440L,
2N3440UA
2
Forward current
transfer ratio
3076
VCE = 10 V dc;
IC = 20 mA dc;
∆hFE1
(1)
±15 percent change
from initial reading.
pulsed see 4.5.1
(1) Devices which exceed the table I, group A limits for this test shall not be accepted.
12
MIL-PRF-19500/368F
* TABLE I. Group A inspection.
Inspection 1/
Subgroup 1 2/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Min
Max
Visual and mechanical 3/
examination
2071
n = 45 devices, c = 0
Solderability 3/ 4/
2026
1022
n = 15 leads, c = 0
Resistance to 3/ 4/ 5/
solvent
n = 15 devices, c = 0
Temp cycling 3/ 4/
Heremetic seal 4/
1051
1071
Test condition C, 25 cycles.
n = 22 devices, c = 0
n = 22 devices, c = 0
Fine leak
Gross leak
Electrical measurements 4/
Bond strength 3/ 4/
Group A, subgroup 2
2037
2075
Precondition T = +250°C at t = 24 hrs
A
or T = +300°C at t = 2 hrs,
A
n = 11 wires, c = 0
Decap internal visual (design
verification) 4/
n = 4 devices, c = 0
Subgroup 2
Emitter to base cutoff current
3061
3041
10
2
µA dc
µA dc
Bias condition D, V = 7 V dc
I
EBO1
EB
Collector to emitter cutoff
Bias condition D
I
CEO
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
V
V
= 300 V dc
= 200 V dc
CE
CE
Collector to emitter cutoff
current
3041
3036
5
2
µA dc
µA dc
Bias condition A, V = -1.5 V dc
I
CEX
BE
V
V
= 450 V dc
= 300 V dc
CE
CE
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
Collector to base cutoff
current
Bias condition D
I
CBO1
V
V
= 360 V dc
= 250 V dc
CB
CB
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
See footnotes at end of table.
13
MIL-PRF-19500/368F
* TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Symbol
Limit
Unit
Method
Conditions
Min
Max
5
Subgroup 2 - Continued
I
CBO2
Collector to base cutoff
current
3036
Bias condition D
µA dc
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
V
V
= 450 V dc
CB
CB
= 300 V dc
Base emitter voltage
(nonsaturated)
3066
3071
Test condition A, pulsed (see 4.5.1),
= 50 mA dc, I = 4 mA dc
1.3
0.5
V dc
V dc
V
V
BE(sat)
I
C
B
Collector to emitter voltage
(saturated)
Pulsed (see 4.5.1), I = 50 mA dc,
C
CE(sat)
I
= 4 mA dc
B
Forward-current transfer
ratio
3076
40
160
Pulsed (see 4.5.1), V = 10 V dc,
h
FE1
CE
I
= 20 mA
C
Forward-current transfer
ratio
3076
3076
Pulsed (see 4.5.1), VCE = 10 V dc,
IC = 2 mA
30
10
h
h
FE2
Forward-current transfer
ratio
Pulsed (see 4.5.1), V = 10 V dc,
CE
FE3
I
= 0.2 mA
C
Subgroup 3
T
= +150°C
A
High temperature
operation:
Collector to emitter cutoff
current
3036
Bias condition D
100
µA dc
I
CB03
V
V
= 360 V dc
= 250 V dc
CB
CB
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
Low temperature operation:
Forward-current transfer ratio
TA = -55°C
= 10 V dc, I = 20 mA dc,
3076
3251
15
V
h
FE4
CE
C
pulsed (see 4.5.1)
Subgroup 4
Pulse response:
Turn-on time
Test condition A
1
µs
µs
V
= 200 V dc, I = 20 mA dc,
t
CC
C
on
I
= 2 mA dc, see figure 5
B1
Turn-off time
10
V
= 200 V dc, I = 20 mA dc,
t
CC
C
off
I
= -I = 2 mA dc, see figure 5
B1
B2
See footnotes at end of table.
14
MIL-PRF-19500/368F
* TABLE I. Group A inspection - Continued.
MIL-STD-750
Inspection 1/
Symbol
Limit
Unit
Method
Conditions
Min
3
Max
Subgroup 4 - Continued
Magnitude of common- emitter
small-signal short-circuit forward-
current transfer ratio
3306
15
10
V
= 10 V dc, I = 10 mA dc,
|h |
fe
CE
C
f = 5 MHz
Open capacitance input open
circuited
3236
3206
3240
pF
V
= 10 V dc, I = 0,
C
obo
CB
E
100 kHz ≤ f ≤ 1 MH
Small-signal short- circuit forward-
current transfer ratio
25
V
= 10 V dc, I = 5 mA,
h
fe
CE
C
f = 1 kHz
Input capacitance (output open
circuited)
75
V
= 5 V dc, I = 0,
C
ibo
CB
E
100 kHz ≤ f ≤ 1 MHz
Subgroup 5
Safe operating area (continuous dc)
3051
(See figure 6) T = +25°C, 1 cycle,
C
t = 1.0 s.
Test 1
V
= 5 V dc, I = 1 A dc
C
CE
Test 2
Only 2N3439, 2N3439L, 2N3439UA
V
V
= 350 V dc, I = 14 mA dc
C
CE
CE
Test 3
= 250 V dc, I = 20 mA dc
C
Only 2N3440, 2N3440L, 2N3440UA
Electrical measurements
See table I, subgroup 2 and 4.5.3
herein.
Breakdown voltage, collector to
emitter
3011
V dc
I
= 10 mA, R
= 470 ohms
V
BR(CEO)
C
BB1
V
= 6 V, L = 25 mH minimum
BB1
f = 30 to 60 Hz
2N3439, 2N3439L, 2N3439UA
2N3440, 2N3440L, 2N3440UA
350
250
1/ For sampling plan, see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests.
3/ Separate samples may be used.
4/ Not required for JANS.
5/ Not required for laser marked devices.
15
MIL-PRF-19500/368F
* TABLE II. Group E inspection (all quality levels) - for qualification only.
MIL-STD-750
Inspection
Qualification
Method
Conditions
Subgroup 1
45 devices
c = 0
Temperature cycling
(air to air)
1051
1071
Test condition C, 500 cycles
Hermetic seal
Fine leak
Gross leak
Electrical measurements
Subgroup 2
See table I, group A, subgroup 2.
45 devices
c = 0
Intermittent life
1037
Intermittent operation life: VCB ≥ 10 V dc, 6000 cycles
Electrical measurements
Subgroups 3, 4, 5, 6, and 7
Not applicable
See table I, group A, subgroup 2.
Subgroup 8
45 devices
c = 0
Reverse stability
1033
Condition A for devices ≥ 400 V, condition B for devices <
400 V.
16
MIL-PRF-19500/368F
NOTES:
1. The rise time (tr) and fall time (tf) of applied pulse shall be ≤ 20 ns, duty cycle ≤ 2 percent,
generator source impedance shall be 50 ohms, pulse width = 20 µs.
2. Output sampling oscilloscope: ZIN ≥ 100 kΩ, CIN ≤ 50 pF, and rise time ≤ 1.0 µs.
FIGURE 5. Pulse response test circuit.
17
MIL-PRF-19500/368F
NOTE: Also applies to the corresponding "L" and "UA" suffix devices.
* FIGURE 6. Maximum safe operating graph (continuous dc).
18
MIL-PRF-19500/368F
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Point's packaging activity within the Military Department or Defense Agency,
or within the Military Department's System Command. Packaging data retrieval is available from the managing
Military Department's or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Title, number, and date of this specification.
b. Issue of DoDISS to be cited in the solicitation, and if required, the specific issue of individual documents
referenced (see 2.2.1).
c. Packaging requirements (see 5.1).
d. Lead finish (see 3.4.1).
e. Type designation and quality assurance level.
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center Columbus, ATTN: DSCC/VQE, P. O. Box 3990, Columbus, OH 43216-5000.
19
MIL-PRF-19500/368F
* 6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example JANHCA2N3439) will be identified on the QML.
Die ordering information
PIN
Manufacturer
33178
43611
2N3439
2N3440
JANHCA2N3439
JANKCA2N3439
JANHCB2N3439
JANKCB2N3439
JANHCA2N3440
JANKCA2N3440
JANHCB2N3440
JANKCB2N3440
*
6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
Custodians:
Army - CR
Navy - EC
Air Force - 11
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2607)
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 99
20
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/368F
2. DOCUMENT DATE
8 July 2002
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER TYPES: 2N3439, 2N3439L,
2N3439UA, 2N3440, 2N3440L, AND 2N3440UA, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
COMMERCIAL
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
614-692-0510
a. Point of Contact
Alan Barone
DSN
850-0510
FAX
614-692-6939
EMAIL
alan.barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center Columbus,
ATTN: DSCC-VAC
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
P.O. Box 3990
Fort Belvoir, VA 22060-6221
Columbus, OH 43216-5000
Telephone (703) 767-6888 DSN 427-6888
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
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