JANTX2N6902 [ETC]
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-204AA ; 晶体管| MOSFET | N沟道| 100V V（ BR ） DSS | 12A I（ D） | TO- 204AA\n
| 型号： | JANTX2N6902 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 12A I(D) | TO-204AA
|
| 文件： | 总24页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process
conversion measures necessary to
comply with this revision shall be
completed by 26 March 1998.
INCH-POUND
MIL-PRF-19500/556F
24 December 1997
SUPERSEDING
MIL-S-19500/556E
9 December 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
TYPES 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, AND 2N6786U
JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
This specification is approved for use by all Depart-
ments and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for an N-channel, enhancement-mode, MOSFET, power
transistor. Three levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two
levels of product assurance are provided for each unencapsulated device type.
1.2 Physical dimensions. See figure 1 [similar to TO-205AF (formerly TO-39)], figure 3 (LCC), and figures 4 and 5 for JANHC and
JANKC die dimensions.
1.3 Maximum ratings. Unless otherwise specified, T = +25 C.
A
Type
3/
P
C
1/
P
V
V
V
I
2/
I
2/
I
S
I
T and
J
T
T
DS
DG
GS
D1
= +25 C
D2
DM
T
= +25 C
T
= +25 C
T
T
= +100 C
T
A
C
C
STG
W
W
V dc
V dc
V dc
A dc
A dc
A dc
A(pk)
C
2N6782
2N6784
2N6786
15
15
15
0.8
0.8
0.8
100
200
400
100
200
400
20
20
20
3.50
2.25
1.25
2.25
1.50
0.80
3.50
2.25
1.25
14.0
9.0
5.5
-55 to +150
-55 to +150
-55 to +150
1/ Derate linearly 0.12 W/ C for T > +25 C.
T
- T
J max C
C
PT =
R
JC
-
TJ( max ) TC
x ( at
TJ( max )
=
I D
(
RθJX)
RDS(on)
2/
3/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAT, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/556F
Ltr
Dimensions
Inches
Notes
Millimeters
Min Max
Min
Max
.335
.180
.370
.041
.034
.045
.021
CD
CH
HD
h
.305
.160
.335
.009
.028
.029
.016
.500
.200 TP
.016
7.75
4.07
8.51
0.23
0.71
0.74
0.41
8.51
4.57
9.40
1.04
0.86
1.14
0.53
19.05
j
2
k
3
LD
LL
LS
LU
7,8
7,8
6
.750 12.70
5.08 TP
0.41
.019
.050
0.48
1.27
7,8
7,8
L
1
2
L
.250
.100
6.35
2.54
7,8
P
Q
r
5
4
9
6
.050
.010
1.27
0.25
45 TP
45 TP
NOTES:
1. Dimensions are in inches. Metric equivalents are given for general information only.
2. Beyond radius (r) maximum, j shall be held for a minimum length of .011 (0.028 mm).
3. Dimension k measured from maximum HD.
4. Outline in this zone is not controlled.
5. Dimension CD shall not vary more than .010 (0.25 mm) in zone P. This zone is controlled for automatic handling.
6. Leads at gauge plane .054 +.001, -.000 (1.37 +0.03, -0.00 mm) below seating plane shall be within .007 (0.18 mm) radius of
true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct
methods or by the gauge and gauging procedure shown on figure 4.
7. LU applies between L and L . LD applies between L and L minimum. Diameter is uncontrolled in L and beyond LL
1
2
2
1
minimum.
8. All three leads.
9.
10.
Radius (r) applies to both inside corners of tab.
Drain is electrically connected to the case.
FIGURE 1. Physical dimensions for TO-205AF.
2
MIL-PRF-19500/556F
Ltr
Dimensions
Millimeters
Inches
Min
Notes
Max
Min
Max
1.54
b
b
.0595
.0325
.0605
1.51
1
.0335
0.83
0.85
2
e
.1995
.0995
.2005
.1005
5.07
2.53
5.09
2.55
e
1
h
j
.150 Nominal
3.81 Nominal
.0175
.0350
.0180
0.44
0.89
0.46
j
1
.0355
.011
0.90
0.28
k
k
.009
0.23
.125 Nominal
3.18 Nominal
1
L
L
.372
.054
.378
9.45
1.37
9.60
.055
1.40
5
3
1
S
.182
.199
4.62
5.05
44.90
45.10
44.90
45.10
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. The location of the tab locator within the limits indicated will be determined by the tab and flange dimensions of the
device being checked.
4. Gauging procedure. The device being measured shall be inserted until its seating plane is .125 .010 inch (3.18
0.25 mm) from the seating surface of the gauge. A force of 8 .5 ounces shall then be applied parallel and
symmetrical to the device's cylindrical axis. The seating plane of the device shall be seated against the gauge. The
use of a pin straightener prior to insertion in the gauge is permissible.
5. Gauging plane.
6. Drill angle.
FIGURE 2. Gauge for lead and tab locations.
3
MIL-PRF-19500/556F
Sym.
Inches
Millimeters
Max
Min
Max
.360
.295
.115
.055
.065
Min
8.77
7.12
2.42
1.02
1.40
BL
.345
.280
.095
.040
.055
9.14
7.49
2.92
1.39
1.65
BW
CH
LL1
LL2
LS
.050 BSC
.025 BSC
.008 BSC
1.27 BSC
LS1
LS2
LW
Q1
0.635 BSC
0.203 BSC
0.76
NOTES:
1. Dimensions are in inches. Metric equivalents are
given for information only.
2. In accordance with ANSI Y14.5M, diameters are
equivalent to x symbology.
.020
.030
0.51
.105 REF
.120 REF
2.67 REF
3.05 REF
1.39
Q2
Q3
.045
.070
.120
.055
1.15
1.78
3.05
TL
.080
.130
2.03
TW
3.30
FIGURE 3. Physical dimensions for LCC.
4
MIL-PRF-19500/556F
2N6782, 2N6784, and 2N6786
Dimensions - 2N6782
Inches Millimeters
Min
Dimensions - 2N6784
Dimensions - 2N6786
Inches Millimeters
Min Min Max
Ltr
Inches
Min
Millimeters
Max
Min
Max
2.34
2.26
1.74
1.68
0.79
0.71
0.76
0.69
0.58
0.51
0.60
0.53
Max
Min
Max
Max
0.082 0.092
0.085 0.089
0.059 0.069
0.062 0.066
0.021 0.031
0.024 0.028
0.020 0.030
0.023 0.027
0.013 0.023
0.016 0.020
0.014 0.024
0.017 0.021
2.08
2.16
1.48
1.57
0.53
0.61
0.50
0.58
0.32
0.41
0.34
0.43
0.082 0.092
0.085 0.089
0.062 0.072
0.065 0.069
0.020 0.030
0.023 0.027
0.019 0.029
0.022 0.026
0.012 0.022
0.015 0.019
0.013 0.023
0.016 0.020
2.08
2.16
1.57
1.65
0.50
0.58
0.47
0.56
0.31
0.38
0.32
0.41
2.34
2.26
1.83
1.75
0.76
0.69
0.73
0.66
0.57
0.48
0.58
0.51
0.101
0.104
0.071
0.074
0.020
0.023
0.019
0.022
0.012
0.015
0.013
0.016
0.111
0.108
0.081
0.078
0.030
0.027
0.029
0.026
0.022
0.019
0.023
0.020
2.55
2.64
1.81
1.88
0.50
0.58
0.47
0.56
0.31
0.38
0.32
0.41
2.81
2.74
2.07
1.98
0.76
0.69
0.73
0.66
0.57
0.48
0.58
0.51
A
B
C
D
E
F
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
3. Unless otherwise specified, tolerance is .005 inch (0.13 mm).
4. The physical characteristics of the die are: The back metals are chromium, nickel, and silver and the back contact
is the drain. The top metal is aluminum.
5. Die thickness is .0187 inch (0.475 mm) .0050 inch (0.130 mm).
FIGURE 4. JANHCA and JANKCA die dimensions.
5
MIL-PRF-19500/556F
Dimensions
Millimeters
Ltr
Inches
Min
Max
0.100
0.076
0.020
0.015
0.020
0.015
Min
Max
2.54
1.93
0.51
0.38
0.51
0.38
A
B
C
D
E
F
0.096
0.072
0.016
0.011
0.016
0.011
2.44
1.83
0.41
0.28
0.41
0.28
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Die thickness = 0.014 nominal.
4. Back metal: Al - Ti - Ni.
5. Top metal: Al.
6. Back contact: Drain.
FIGURE 5. JANHCB and JANKCB die dimensions.
6
MIL-PRF-19500/556F
Dimensions
Millimeters
Ltr
Inches
Min
Max
Min
Max
3.22
4.63
0.94
0.74
0.94
0.66
A
B
C
D
E
F
0.1262
0.1817
0.033
0.025
0.033
0.022
0.1266
0.1821
0.037
0.029
0.037
0.026
3.21
4.62
0.84
0.64
0.84
0.56
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Die thickness = 0.014 nominal.
4. Back metal: Al - Ti - Ni.
5. Top metal: Al.
6. Back contact: Drain.
FIGURE 6. JANHCC and JANKCC die dimensions.
7
MIL-PRF-19500/556F
1.4 Primary electrical characteristics at T = +25 C.
C
Min V
(BR)DSS
V
Max I
Max r
DS(on)
1/
R
GS(th)1
DSS1
JC
Type
2/
V
= 0 V
V
V
V
GS
= 0 V
V
GS
= 10 V dc
maximum
GS
DS
I = 0.25 mA dc
D
GS
I
= 1.0 mA dc
D
V
= 80
T
= +25 C
T = +150 C
J
DS
J
percent of
rated V
at I
at I
D2
D2
DS
V dc
V dc
A dc
ohm
ohm
C/W
Min Max
2N6782
2N6784
2N6786
100
200
400
2.0 4.0
2.0 4.0
2.0 4.0
25
25
25
0.60
1.50
3.60
1.20
3.15
9.00
8.33
8.33
8.33
1/ Pulsed (see 4.5.1).
2/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.
2. APPLICABLE DOCUMENTS
2.1 Government documents.
2.1.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document
to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department
of Defense Index of Specifications and Standards (DODISS) and supplement thereto, cited in the solicitation (see 6.3).
SPECIFICATION
MILITARY
MIL-PRF-19500
STANDARD
MILITARY
- Semiconductor Devices, General Specification for.
MIL-STD-750
- Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of federal and military specifications, standards, and handbooks are available from the Defense
Printing Service Detachment Office, Building 4D (Customer Service), 700 Robbins Avenue, Philadelphia, PA 19111-5094.)
2.2 Order of precedence. In the event of a conflict between the text of this document and the references cited herein, the text of this
document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific
exemption has been obtained.
3. REQUIREMENTS
3.1 Associated specification. The individual item requirements shall be in accordance with MIL-PRF-19500 and as specified herein.
8
MIL-PRF-19500/556F
3.2 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-
19500 and as follows:
C - - - - - - - - - - - - - - - - - - - - -
- - - - - - - - - - - - - - - - - - - -
Coulomb.
g
FS
DC forward transconductance.
I
S
- - - - - - - - - - - - - - - - - - - - -
Source current through drain (forward biased V ).
SD
V
- - - - - - - - - - - - - - - - - -
Drain to source breakdown voltage, all other terminals short-circuited to source.
Source pin to case isolation current.
(BR)DSS
I
- - - - - - - - - - - - - - - - - -
(ISO)
3.3 Interface requirements and physical dimensions. The Interface requirements and physical dimensions shall be as specified in
MIL-PRF-19500, and figures 1 (T0-205), 3 (LCC), 4, 5, and 6 (die) herein.
3.3.1 Lead material and finish. Lead material shall be Kovar, Alloy 52, and a copper core is permitted (for T0-205AF). Lead finish shall
be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be
specified in the acquisition document (see 6.3).
3.3.2 Internal construction. Multiple chip construction shall not be permitted.
3.4 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking of country of origin may
be omitted from the body of the transistor, but shall be retained on the initial container.
3.5 Electrostatic discharge protection. The devices covered by this specification require electrostatic protection.
3.5.1 Handling. MOS devices must be handled with certain precautions to avoid damage due to the accumulation of static charge.
However, the following handling practices are recommended (see 3.5).
a. Devices should be handled on benches with conductive handling devices.
b. Ground test equipment, tools, and personnel handling devices.
c. Do not handle devices by the leads.
d. Store devices in conductive foam or carriers.
e. Avoid use of plastic, rubber, or silk in MOS areas.
f.
Maintain relative humidity above 50 percent if practical.
g. Care should be exercised during test and troubleshooting to apply not more than maximum rated voltage to any lead.
h. Gate must be terminated to source, R 100 k, whenever bias voltage is to be applied drain to source.
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as
specified in 1.3, 1.4, and table I.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3.
3.8 Qualification. Devices furnished under this specification shall be products that are authorized by the qualifying activity for listing
on the applicable qualified products list before contract award (see 4.2 and 6.2 ).
4. VERIFICATION
4.1 Classification of Inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3)
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for
qualification inspection in accordance with MIL-PRF-19500.
9
MIL-PRF-19500/556F
4.2.1 Group E inspection. Group E inspection shall be conducted in accordance with MIL-PRF-19500 and table II herein.
4.2.2 JANHC and JANKC die. Qualification shall be in accordance with MIL-PRF-19500.
4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table II of MIL-PRF-19500 and as
specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I
herein shall not be acceptable.
4.3.1 Screening (JANHC and JANKC). Screening of die shall be in accordance with MIL-PRF-19500. As a minimum, die shall be
100-percent probed in accordance with group A, subgroup 2, except test current shall not exceed 20 A.
Measurement
Screen (see table IV
of MIL-PRF-19500)
JANS level
JANTX and JANTXV levels
Gate stress test (see 4.5.5)
1/
Gate stress test (see 4.5.5)
1/
Method 3161 (see 4.5.3)
Method 3470 (optional)
Method 3161 (see 4.5.3)
Method 3470 (optional)
2/
3
Method 1051, test condition G
Method 1051, test condition G
Subgroup 2 of table I herein
9 1/
I
I
, subgroup 2 of table I herein
GSS1, DSS1
subgroup 2 of table I herein
10
11
Method 1042, test condition B
Method 1042, test condition B
I
, I
, r
, V
,
I
, I ,
, r
GSS1 DSS1 DS(on)1 GS(th)1
subgroup 2 of table I herein;
GSS1 DSS1 DS(on)1
V , subgroup 2 of table I
GS(th)1
I
=
20 nA dc or 100 percent
of initial value, whichever is greater.
25 A dc or 100 percent of
initial value, whichever is greater.
herein.
GSS1
I
=
DSS1
12
13
Method 1042, test condition A, t = 240 hours
Subgroups 2 and 3 of table I herein;
Method 1042, test condition A
Subgroup 2 of table I herein;
I
=
20 nA dc or 100 percent of
I
= 20 nA dc or
GSS1
GSS1
initial value, whichever is greater.
100 percent of initial value,
whichever is greater.
I
=
25 A dc or 100 percent of
I
=
25 A dc or
100 percent of initial value,
whichever is greater.
DSS1
DSS1
initial value, whichever is greater.
r
=
20 percent of initial
20 percent of initial
r
=
20 percent of initial
DS(on)1
value.
DS(on)1
value.
V
=
V
= 20 percent of initial
GS(th)1
value.
GS(th)1
value.
1/ Shall be performed anytime before screen 10.
2/ Method 3470 is optional if performed as a sample in group A, subgroup 5.
10
MIL-PRF-19500/556F
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500. Alternate flow is allowed for
quality conformance inspection in accordance with MIL-PRF-19500.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical
measurements (end-points) shall be in accordance with the inspections of table I, group A, subgroup 2 herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VIa (JANS) and table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500 and herein. Electrical measurements (end-points) shall
be in accordance with the inspections of table I, group A, subgroup 2 herein.
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
Condition
3
4
1051
1042
Test condition G.
Test condition D; 2,000 cycles. The heating cycle shall be 1 minute minimum.
5
1042
Accelerated steady-state operation life; test condition A, V = rated T = +175 C,
DS A
I . Read and
(pre and post) at 1 mA = D
t = 120 hours. Read and record V
(BR)DSS
record I
(pre and post). Deltas for V(BR)DSS shall not exceed 10 percent and IDSS
DSS
shall not exceed 25 A.
Accelerated steady-state gate stress; condition B, V
24 hours.
= rated, T = +175 C, t =
A
GS
5
6
2037
3161
Bond strength (Al-Au die interconnects only); test condition A.
See 4.5.2.
4.4.2.2 Group B inspection, table VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
Method
1051
Condition
2
3
3
Test condition G.
1042
Test condition D, 2,000 cycles. The heating cycle shall be 1 minute minimum.
Test condition A. All internal bond wires for each device shall be pulled separately.
2037
4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in
table VII of MIL-PRF-19500 and as follows. Electrical measurements (end-points) shall be in accordance with the inspections of table I,
group A, subgroup 2 herein.
Subgroup
Method
2036
Condition
2
6
Test condition E (Not required for LCC).
1042
Test condition D, 6,000 cycles. The heating cycle shall be 1 minute minimum.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
11
MIL-PRF-19500/556F
4.5.2 Thermal resistance. Thermal resistance measurements shall be performed in accordance with method 3161 of MIL-STD-750.
R
= 8.33 C/W.
JC(max)
a. Measuring current (I ) - - - - - - - - - - - - -
10 mA.
M
b. Drain heating current (I ) - - - - - - - - - - - -
0.5 A minimum (0.67 A minimum for LCC).
Steady-state (see MIL-STD-750, method 3161 for definition).
20 V minimum (15 V minimum for LCC).
H
c. Heating time (t ) - - - - - - - - - - - - - - - - -
H
d. Drain-source heating voltage (V ) - - - - - -
H
e. Measurement time delay (t
) - - - - - - - - - 10 to 80 s.
Sample window time (t ) - - - - - - - - - - - 10 s maximum.
SW
MD
f.
4.5.3 Thermal impedance (Z
measurements). The Z
measurements shall be performed in accordance with
JC
JC
MIL-STD-750, method 3161. The maximum limit (not to exceed figure 7, thermal impedance curves and the group A, subgroup 2 limits)
for Z in screening (table IV of MIL-PRF-19500) shall be derived by each vendor by means of statistical process control. When the
JC
process has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. In addition to
screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lot to be
plotted on the applicable X, R chart. If a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for
engineering evaluation and disposition. This procedure may be used in lieu of an inline process monitor.
a. Measuring current (I ) - - - - - - - - - - - - - -
10 mA.
M
b. Drain heating current (I ) - - - - - - - - - - - -
0.5 A minimum (0.67 A minimum for LCC).
10 ms.
H
c. Heating time (t ) - - - - - - - - - - - - - - - - -
H
d. Drain-source heating voltage (V ) - - - - - -
20 V minimum (15 V minimum for LCC).
H
e. Measurement time delay (t
) - - - - - - - - - 30 to 60 s.
sample window time - - - - - - - - - - - - 10 s (maximum).
SW
MD
f.
4.5.4 Unclamped inductive switching.
a. Peak current (I ) - - - - - - - - - - - - - - - - - -
t
rated I
10 V.
25
D
D1
b. Peak gate voltage (V ) - - - - - - - - - - - -
GS
c. Gate to source resistor (R ) - - - - - - - - -
GS
R
GS
200 .
d. Initial case temperature (T ) - - - - - - - - -
C
+25 C +10 C, -5 C.
100 10 percent.
e. Inductance (L) - - - - - - - - - - - - - - - -
H
f.
Number of pulses to be applied - - - - - - - - 1 pulse minimum.
g. Pulse repetition rate - - - - - - - - - - - -
4.5.5 Gate stress test.
None.
V
=
30 V minimum.
GS
t = 250 s minimum.
12
MIL-PRF-19500/556F
TABLE I. Group A inspection.
Inspection 1/, 4/
Subgroup 1
MIL-STD-750
Conditions
Symbol
Limits
Max
Unit
Method
2071
Min
Visual and mechanical
inspection
Subgroup 2
Thermal impedance 2/
3161
3407
See 4.5.3
Z
2.5
C/W
JC
Breakdown voltage,
drain to source
V
= 0 V; I = 1.0 mA dc;
V
GS
D
(BR)DSS
bias condition C
2N6782
2N6784
2N6786
100
200
400
V dc
V dc
V dc
Gate to source voltage
(threshold)
3403
3411
3413
V
V
;
V
2.0
4.0
100
25
V dc
nA dc
A dc
DS
GS
GS(th)1
GSS1
I
D
= 0.25 mA dc
Gate current
Drain current
Bias condition C; V
DS
V
= 0 V;
I
= +20 and -20 V dc
GS
V
V
= 0; bias condition C;
I
GS
DSS1
= 0 V; V
DS
= 80 percent
DS
of rated V
DS
Static drain to source
on-state resistance
3421
3421
4011
V
= 10 V dc; condition A;
r
r
GS
pulsed (see 4.5.1); I = I
DS(on)1
D
D2
2N6782
2N6784
2N6786
0.60
1.50
3.60
Drain to source
V
= 10 V dc; condition A;
GS
DS(on)2
on-state resistance
pulsed (see 4.5.1); I = I
D
D1
2N6782
2N6784
2N6786
0.61
1.60
3.70
Forward voltage
Pulsed (see 4.5.1);
V
SD
(source drain diode)
V
= 0 V; I = I
D1
GS
S
2N6782
2N6784
2N6786
1.5
1.5
1.4
V
V
V
See footnote at end of table.
13
MIL-PRF-19500/556F
TABLE I. Group A inspection - Continued.
Inspection 1/, 4/
Subgroup 3
MIL-STD-750
Conditions
Symbol
Limits
Max
Unit
Method
Min
High temperature
operation:
T
= T = +125 C
C J
Gate current
3411
3413
Bias condition C
I
I
200
.25
nA dc
mA dc
V dc
GSS2
V
DS
V
GS
= 0 V
= +20 V dc and -20 V dc
Drain current
Bias condition C;
DSS2
V
GS
V
DS
= 0 V;
= 80 percent rated V
DS
Gate to source voltage
(threshold)
3403
3421
V
V
GS
;
V
1.0
DS
GS(th)2
I
D
= 0.25 mA
Static drain to source
on-state resistance
V
= 10 V dc;
r
GS
pulsed (see 4.5.1); I = I
DS(on)3
D
D2
2N6782
2N6784
2N6786
1.08
2.81
7.92
Low temperature
operation:
T
V
= T = -55 C
J
C
Gate to source voltage
(threshold)
3403
3472
V
GS
;
V
5.0
V dc
DS
GS(th)3
I
D
= 0.25 mA
Subgroup 4
Switching time test
I
D
= I ;
D1
(see 1.3);
V
= 10 V dc;
GS
R
= 7.5
;
g
V
= 50 % of V
DD
DS
Turn-on delay time
t
t
d(on)
2N6782
2N6784
2N6786
15
15
15
ns
ns
ns
Rise time
r
2N6782
2N6784
2N6786
25
20
20
ns
ns
ns
See footnote at end of table.
14
MIL-PRF-19500/556F
TABLE I. Group A inspection - Continued.
Inspection 1/, 4/
MIL-STD-750
Conditions
Symbol
Limits
Max
Unit
Method
Min
Subgroup 4 - Continued
Turn-off delay time
t
d(off)
2N6782
2N6784
2N6786
25
30
35
ns
ns
ns
Fall time
t
f
2N6782
2N6784
2N6786
20
20
30
ns
ns
ns
Subgroup 5
Single pulse unclamped
Inductive switching 3/
3470
3474
See 4.5.4
Electrical measurements
Safe operating area test
See table I, group A,
subgroup 2
See figure 8;
V
V
= 80 percent of rated V
200 V maximum
DS
DS
DS
t
p
= 10 ms
Electrical measurements
See table I, group A,
subgroup 2
Subgroup 6
Not applicable
Subgroup 7
Gate charge
Test 1
3471
Condition B
On-state gate charge
Q
nC
g(on)
2N6782
2N6784
2N6786
6.55
6.24
8.37
See footnote at end of table.
15
MIL-PRF-19500/556F
TABLE I. Group A inspection - Continued.
Inspection 1/, 4/
MIL-STD-750
Conditions
Symbol
Limits
Unit
Method
Min
Max
Subgroup 7 - Continued
Test 2
Gate to source charge
Q
nC
gs
2N6782
2N6784
2N6786
1.61
1.24
1.55
Test 3
Gate to drain charge
Q
nC
gd
2N6782
2N6784
2N6786
3.46
4.95
4.97
Reverse recovery time
2N6782
3473
V
50 V
t
rr
ns
ns
ns
ns
DD
di/dt 100 A/ s;
= 3.5 A
180
350
540
I
F
2N6784
di/dt 100 A/ s;
I
F
= 2.25 A
2N6786
di/dt 100 A/ s;
I
F
= 1.25 A
1/ For sampling plan, see MIL-PRF-19500.
2/ This test is required for the following end-point measurements only (not intended for screen 13):
JANS - group B, subgroups 3 and 4
JAN, JANTX and JANTXV - group B, subgroups 2 and 3;
group C, subgroup 6;
group E, subgroup 1
3/ This test is optional if performed as a 100 percent screen.
4/ Electrical characteristics for "U" suffix devices are identical to the corresponding non"U" suffix devices unless otherwise specified.
16
MIL-PRF-19500/556F
TABLE II. Group E inspection (all quality levels) for qualification only.
MIL-STD-750
Inspection 1/
Subgroup 1
Qualification
conformance
inspection
Method
Conditions
45 devices, c = 0
Thermal shock
1051
Condition G, 500 cycles
(temperature cycling)
Electrical measurements
Subgroup 2 2/
See table I, group A, subgroup 2
45 devices, c = 0
Steady-state reverse bias
Electrical measurements
Steady-state gate bias
Electrical measurements
Subgroup 3
1042
1042
Condition A; 1,000 hours
See table I, group A, subgroup 2
Condition B; 1,000 hours
See table I, group A, subgroup 2
Not applicable
Subgroup 4
5 devices, c = 0
Thermal resistance
3161
R
= 8.33 C/W maximum, see 4.5.2
JC
Subgroup 5
Not applicable
1/ JANHC and JANKC devices are qualified in accordance with MIL-PRF-19500.
2/ A separate sample may be pulled for each test.
17
MIL-PRF-19500/556F
2N6782, 2N6782U, 2N6786, 2N6784U, 2N6786, 2N6786U
FIGURE 7. Normalized transient thermal impedance.
18
MIL-PRF-19500/556F
2N6782, 2N6782U
FIGURE 8. Maximum safe operating area.
19
MIL-PRF-19500/556F
2N6784, 2N6784U
FIGURE 8. Maximum safe operating area - Continued.
20
MIL-PRF-19500/556F
2N6786, 2N6786U
FIGURE 8. Maximum safe operating area - Continued.
21
MIL-PRF-19500/556F
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When
actual packaging of material is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to
ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Points' packaging activity
within the Military Department or Defense Agency, or within the Military Departments' System Command. Packaging data retrieval is
available from the managing Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting
the responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Notes. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Cross-reference and complement list. Parts from this specification may be used to replace the following commercial Part or
Identifying Number (PIN). The term PIN is equivalent to the term part number which was previously used in this specification.
Preferred types
Commercial types
2N6782
2N6784
2N6786
IRFF110, IRFF111, IRFF112, IRFF113
IRFF210, IRFF211, IRFF212, IRFF213
IRFF310, IRFF311, IRFF312, IRFF313
2N6782U
2N6784U
2N6786U
IRFE110, IRFE111, IRFE112, IRFE113
IRFE210, IRFE211, IRFE212, IRFE213
IRFE310, IRFE311, IRFE312, IRFE313
6.3 Acquisition requirements. Acquisition documents should specify the following:
a. Issue of DODISS to be cited in the solicitation (see 2.1.1 and 2.2).
b. The lead finish as specified (see 3.3.1).
c. For die acquisition, specify the JANHC or JANKC letter version (see figures 3, 4, and 5).
d. Type designation and quality assurance level.
6.4 Suppliers of JANHC and JANKC die. The qualified die suppliers with the applicable letter version (example, JANHCA2N6786) will
be identified on the QPL.
6.5 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of
award of contract, qualified for inclusion in Qualified Products List QPL-19500 whether or not such products have actually been so listed
by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the
products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded
contracts or purchase orders for the products covered by this specification. Information pertaining to qualification of products may be
obtained from Defense Supply Center Columbus, DSCC-VQE, Columbus, OH 43216.
6.6 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue
due to the extensiveness of the changes.
22
MIL-PRF-19500/556F
CONCLUDING MATERIAL
Custodians:
Army - CR
Navy - EC
Preparing activity:
DLA - CC
Air Force - 17
(Project 5961-1958)
Review activities:
Army - AR, MI, SM
Navy - AS, CG, MC
Air Force - 13, 19, 85, 99
23
MIL-PRF-19500/556F
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of
requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to
waive any portion of the referenced document(s) or to amend contractual requirements.
I RECOMMEND A CHANGE:
1. DOCUMENT NUMBER
MIL-PRF-19500/556F
2. DOCUMENT DATE
24 December 1997
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON; TYPES 2N6782, 2N6782U, 2N6784;2N6784U, 2N6786,
AND 2N6786U, JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
(1) Commercial
7. DATE SUBMITTED
(YYMMDD)
(2) AUTOVON
(If applicable)
8. PREPARING ACTIVITY
a. NAME
b. TELEPHONE (Include Area Code)
(1) Commercial
614-692-0510
(2) AUTOVON
850-0510
Alan Barone
c. ADDRESS (Include Zip Code)
Defense Supply Center Columbus
3990 East Broad St.
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Quality and Standardization Office
5203 Leesburg Pike, Suite 1403, Falls Church, VA 22041-3466
Telephone (703) 756-2340 AUTOVON 289-2340
Columbus, OH 43216-5000
DD Form 1426, OCT 89
Previous editions are obsolete
24
198/290
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