JANTXV2N2605 [ETC]
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 30MA I(C) | TO-46 ; 晶体管| BJT | PNP | 45V V（ BR ） CEO | 30MA I（C ） | TO- 46\n
| 型号： | JANTXV2N2605 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 30MA I(C) | TO-46
|
| 文件： | 总17页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion measures necessary to
comply with this document shall be completed by 5 April 2002.
INCH-POUND
MIL-PRF-19500/354H
5 March 2002
SUPERSEDING
MIL-PRF-19500/354G
23 April 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER
TYPES 2N2604, 2N2604UB, 2N2605 AND 2N2605UB
JAN, JANTX, JANTXV, AND JANS, JANHC, JANKC
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP, silicon, low-power transistors for use
in low noise-level amplifier applications. Four levels of product assurance are provided for each encapsulated
device type and two levels for each unencapsulated device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (TO-46), figure 2 (UB), and figures 3 and 4 die.
1.3 Maximum ratings.
Type
PT (1)
TA = +25°C
MW
VCBO
VEBO
VCEO
IC
TJ and TSTG
R
θJA
V dc
80
70
V dc
6
6
V dc
60
60
mA dc
30
30
°C
°C/W
437
437
2N2604, UB
2N2605, UB
400
400
-65 to +200
-65 to +200
(1)Derate linearly at 2.28 mW/°C above TA = +25°C.
1.4 Primary electrical characteristics.
hFE1
hfe
|hfe|
Cobo
VBE(sat)
VCE(sat)
V
CE=5 V dc
VCE=5 V dc
VCE=5 V dc
VCB=5 V dc
IC=10 mA dc
IC=10 mA
dc
IB=500 µA
IC=10 µ dc
IC=1 mA dc
f=1 kHz
IC=500 µA dc
f=30 MHz
IE=0
100 kHz ≤ f ≤
1 MHz
IB=500 µA
dc
dc
2N2604 2N2605 2N2604 2N2605
PF
V dc
0.7
0.9
V dc
0.3
Min
Max
40
100
300
60
150
450
1
8
120
180
6
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal
(DD Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/354H
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards and handbooks. The following specifications, standards and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM - DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500 and on figure 1 (TO-46), figure 2 (UB), and on figures 3 and 4 die.
2
MIL-PRF-19500/354H
Dimensions
Inches Millimeters
Symbol
Note
Min
Max
.195
.085
.230
Min
4.52
1.65
5.31
Max
4.95
2.16
5.84
CD
CH
HD
LC
LD
LL
LU
L1
L2
Q
.178
.065
.209
.100 TP
2.54 TP
5
6
6
6
6
6
4
3, 8
3, 8
9
.016
.500
.016
.021
0.41
0.53
1.750 12.70 44.45
.019
.050
0.41
6.35
0.48
1.27
.250
.040
.048
.046
.010
1.02
1.22
1.17
0.25
TL
TW
r
.028
.036
0.71
0.91
5
α
45° TP
45° TP
NOTES:
1. Dimensions are in inches. Lead 1 is emitter, lead 2 is base, and lead 3 is collector.
2. Metric equivalents are given for general information only.
3. Symbol TL is measured from HD maximum.
4. Details of outline in this zone are optional.
5. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within .007
inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The
device may be measured by direct methods or by the gauge and gauging procedure.
6. Symbol LU applies between L and L . Dimension LD applies between L and LL minimum.
1
2
2
7. Lead number three is electrically connected to case.
8. Beyond r maximum, TW shall be held for a minimum length of .011 inch (0.28 mm).
9. Symbol r applied to both inside corners of tab.
10. In accordance with ANSI Y14.5M, diameters are equivalent to φx symbology.
FIGURE 1. Physical dimensions - TO-46.
3
MIL-PRF-19500/354H
Dimensions
Symbol
Inches
Millimeters
Min
Note
Min
.046
.017
.016
.016
.016
.085
.071
.035
.085
.115
Max
.056
.035
.024
.024
.024
.108
.079
.039
.108
.128
.128
.038
.038
Max
1.42
0.89
0.61
0.61
0.61
2.74
2.01
0.99
2.74
3.25
3.25
0.96
0.96
A
0.97
0.43
0.41
0.41
0.41
2.41
1.81
0.89
2.41
2.82
A1
B1
B2
B3
D
D1
D2
D3
E
E3
L1
L2
.022
.022
0.56
0.56
NOTES:
1. Dimensions are in inches.
2. Metric equivalents are given for general information only.
FIGURE 2. Physical dimensions, surface mount (UB version).
4
MIL-PRF-19500/354H
1. Chip size
.015 x .019 inch ±.001 inch, (0.381 x 0.483 ±0.0254 mm).
.010 ±.0015 inch, (0.254 ±0.381).
Aluminum 15,000Å minimum, 18,000Å nominal.
A. Gold 2,500Å minimum, 3,000Å nominal.
B. Eutectic Mount - No Gold.
2. Chip thickness
3. Top metal
4. Back metal
5. Backside
Collector.
6. Bonding pad
7. Passivation
B = .003 inch, (0.076 mm), E = .004 inch, (0.102 mm) diameter.
Si3N4 (Silicon Nitride) 2kÅ min, 2.2kÅ nom.
FIGURE 3. JANHC and JANKC A-version die dimensions.
5
MIL-PRF-19500/354H
Die size:
.018 x .018 inch (0.457 x 0.457 mm).
.008 ±.0016 inch (0.203 ±0.406 mm).
.0025 inch (0.0635 mm) diameter.
.003 inch (0.076 mm) diameter.
Gold, 6500 ±1950 Ang.
Die thickness:
Base pad:
Emitter pad:
Back metal:
Top metal:
Back side:
Aluminum, 19500 ±2500 Ang.
Collector.
Glassivation:
SiO2, 7500 ±1500 Ang.
FIGURE 4. JANHC and JANKC B-version die dimensions.
6
MIL-PRF-19500/354H
3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750 and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in paragraph 1.3, 1.4, and table I.
3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I
herein.
3.7 Marking. Marking shall be in accordance with MIL-PRF-19500.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
* 4.2.1 JANHC and JANKC qualification. JANHC and JANKC qualification inspection shall be in accordance with
MIL-PRF-19500.
* 4.2.2 Group E qualification. Group E inspection shall be performed herein for qualification or requalification only.
In case qualification was rewarded to a prior revision of the associated specification that did not request the
performance of table II tests, the tests specified in table II herein shall be performed by the first inspection lot
processed to this revision to maintain qualification.
7
MIL-PRF-19500/354H
* 4.3 Screening (JANS, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein shall not be acceptable.
Screen (see
table IV of
MIL-PRF-19500)
3c
Measurement
JANS level
Thermal impedance
JANTX and JANTXV levels
Thermal impedance
method 3131 of MIL-STD-750.
method 3131 of MIL-STD-750.
Not applicable
9
ICBO1 and hFE2
10
11
24 hours minimum
24 hours minimum
ICBO1 and hFE2
ICBO1; hFE2; ∆ICBO1 = 100 percent or 2
nA dc, whichever is greater;
∆hFE2 = ±15 percent change of initial
value.
12
13
See 4.3.1
Subgroups 2 and 3 of table I herein;
See 4.3.1
Subgroup 2 of table I herein;
∆ICBO1 = 100 percent or 2 nA dc,
∆ICBO1 = 100 percent or 2 nA dc,
whichever is greater; ∆hFE2 = ±15
whichever is greater; ∆hFE2 = ±25
percent change of initial value.
percent change of initial value.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = room ambient as defined in the
general requirements of 4.5 of MIL-STD-750, PT = 400 mW see 1.3 herein.
4.3.2 Screening (JANHC and JANKC). Screening of JANHC and JANKC die shall be in accordance with
MIL-PRF-19500, "Discrete Semiconductor Die/Chip Lot Acceptance". Burn-in duration for the JANKC level follows
JANS requirements; the JANHC follows JANTX requirements.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500, and table I
herein.
4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VIa (JANS) of MIL-PRF-19500 and 4.4.2.1 herein. Electrical measurements
(end-points) and delta requirements shall be in accordance with group A, subgroup 2 and 4.5.3 herein, delta
requirements only apply to subgroups B4, and B5. See 4.4.2.2 herein for JAN, JANTX, and JANTXV group B
testing. Electrical measurements (end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after
each step in 4.4.2.2 herein and shall be in accordance with group A, subgroup 2 and 4.5.3 herein.
8
MIL-PRF-19500/354H
4.4.2.1 Group B inspection, table VIa (JANS) of MIL-PRF-19500.
Subgroup
Method
1037
Condition
CB = 10 V dc, 2,000 cycles.
*
*
B4
B5
V
1027
(Note: If a failure occurs, resubmission shall be at the test conditions of the
original sample.) VCB = 10 V dc, PD ≥ 100 percent of maximum rated PT (see 1.3).
Option 1: 96 hours minimum, sample size in accordance with table VIa of
MIL-PRF-19500, adjust TA or PD to achieve TJ = +275°C minimum.
Option 2: 216 hours minimum, sample size = 45, c = 0; adjust TA or PD to achieve
TJ = +225°C minimum.
4.4.2.2 Group B inspection, (JAN, JANTX, and JANTXV). Separate samples may be used for each step. In the
event of a group B failure, the manufacturer may pull a new sample at double size from either the failed assembly lot
or from another assembly lot from the same wafer lot. If the new “assembly lot” option is exercised, the failed
assembly lot shall be scrapped.
Step
1
Method
1039
Condition
Steady-state life: Test condition B, 340 hours minimum, VCB = 10 - 30 V dc, power shall be
applied to achieve PT ≥ 400 mW, n = 45 devices, c = 0
2
1039
1032
The steady-state life test of step 1 shall be extended to 1,000 hours for each die design.
Samples shall be selected from a wafer lot every twelve months of wafer production.
Group B, step 2 shall not be required more than once for any single wafer lot.
n = 45, c = 0.
3
High-temperature life (non-operating), t = 340 hours, TA = +200°C. n = 22, c = 0.
4.4.2.3 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements:
a.
For JAN, JANTX, and JANTXV samples shall be selected randomly from a minimum of three wafers
(or from each wafer in the lot) from each wafer lot. For JANS, samples shall be selected from each
inspection lot. See MIL-PRF-19500.
b.
Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (subgroups B4 and B5 for JANS, and group B for JAN, JANTX,
and JANTXV) may be pulled prior to the application of final lead finish.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the tests and conditions
specified for subgroup testing in table VII of MIL-PRF-19500, and in 4.4.3.1 (JANS) and 4.4.3.2 (JAN, JANTX, and
JANTXV) herein for group C testing. Electrical measurements (end-points) and delta requirements shall be in
accordance with group A, subgroup 2 and 4.5.3 herein; delta requirements only apply to subgroup C6.
9
MIL-PRF-19500/354H
4.4.3.1 Group C inspection, table VII (JANS) of MIL-PRF-19500.
Subgroup Method Condition
C2
C6
2036
1026
Test condition E (not applicable to UB).
1,000 hours at VCB = 10 - 30 V dc; power shall be applied PT ≥ 400 mW.
4.4.3.2 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup Method Condition
C2
2036
3131
Test condition E, not applicable for UA and UB devices.
θJC (see 1.3).
Not applicable.
*
C5
C6
R
4.4.4 Group E Inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-
points) and delta measurements shall be in accordance with the applicable steps of 4.5.3 and table I, subgroup 2
herein; except, ZθJX need not be performed.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows.
4.5.1 Pulse measurements. Conditions for pulse measurements shall be as specified in section 4 of MIL-STD-750.
4.5.2 Noise figure. The noise figure shall be measured using commercially available test equipment and its
associated standard test procedures.
4.5.3 Delta requirements. Delta requirements shall be as specified below:
Step
Inspection
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
3036
1
2
Collector-base cutoff
current
Bias condition D,
CB = 50 V dc
100 percent of initial
value or 5 nA dc,
whichever is greater.
∆ICB01 (1)
V
Forward current
transfer ratio
3076
±25 percent change
from initial reading.
VCE = 5 V dc;
IC = 500 uA dc;
pulsed see 4.5.1
∆hFE2
(1)
(1) Devices which exceed the group A limits for this test shall not be accepted.
10
MIL-PRF-19500/354H
TABLE I. Group A inspection.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
2071
Min
Max
Subgroup 1 2/
n = 45 devices, c = 0
Visual and mechanical
examination 3/
Solderability 3/ 4/
2026
1022
n = 15 leads, c = 0
Resistance to solvents
3/ 4/ 5/
n = 15 devices, c = 0
Temp cycling 3/ 4/
1051
1071
Test condition C,
25 cycles.
n = 22 devices, c = 0
Heremetic seal 4/
Fine leak
Gross leak
n = 22 devices, c = 0
Group A, subgroup 2
Electrical
measurements 4/
Bond strength 3/ 4/
2037
Precondition
TA = +250°C at t = 24 hrs
or TA = +300°C at t = 2 hrs
n = 11 wires, c = 0
Subgroup 2
3036
3011
Bias condition D;
ICBO2
10
µA dc
Collector - base
leakage current
2N2604
VCB = 80 V dc
VCB = 70 V dc
2N2605
Collector - emitter
breakdown voltage
Bias condition D;
IC = 10 mA dc;
V(BR)CEO
60
V dc
pulsed (see 4.5.1)
Emitter - base
cutoff current
3061
3036
3061
Bias condition D;
VEB = 6 V dc
IEBO2
ICBO1
IEBO
10
10
2
µA dc
NA dc
NA dc
Collector - base
cutoff current
Bias condition D;
VCB = 50 V dc
Emitter - base
cutoff current
Bias condition D;
VEB = 5 V dc
See footnotes at end of table.
11
MIL-PRF-19500/354H
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
Min
Max
10
Subgroup 2 - Continued.
Collector - emitter
cutoff current
3041
3076
Bias condition C;
VCE = 50 V dc
ICES
nA dc
Forward current
transfer ratio
2N2604
VCE = 5 V dc;
IC = 10 µA dc
hFE1
hFE2
hFE3
40
100
120
300
2N2605
Forward current
transfer ratio
2N2604
3076
3076
VCE = 5 V dc;
IC = 500 µA dc
60
150
180
450
2N2605
Forward current
transfer ratio
2N2604
VCE = 5 V dc;
IC = 10 mA dc
40
100
160
400
2N2605
Base - emitter
voltage (saturated)
3066
3071
Test condition A;
IC = 10 mA dc;
IB = 500 µA dc
VBE(sat)
0.7
0.9
V dc
V dc
Collector - emitter
voltage (saturated)
IC = 10 mA dc;
IB = 500 µA dc
VCE(sat)
0.3
Subgroup 3
TA = +150°C
High-temperature
operation:
Collector - base
cutoff current
3036
3076
Bias condition D;
VCB = 50 V dc
ICBO2
5
µA dc
Low-temperature
operation:
TA = -55°C
Forward current
transfer ratio
2N2604
VCE = 5 V dc;
IC = 10 µA dc
hFE4
15
30
2N2605
See footnotes at end of table.
12
MIL-PRF-19500/354H
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
3201
Min
Max
Subgroup 4
VCE = 5 V dc;
IC = 1 mA dc; f = 1 kHz
hie
Small-signal short-
circuit input impedance
2N2604
2N2605
1
2
10
20
kΩ
kΩ
Small-signal open-
circuit reverse-voltage
transfer ratio
3211
3216
VCE = 5 V dc;
IC = 1 mA dc;
f = 1 kHz
hre
10 x 10-4
Small-signal open-
circuit output
admittance
VCE = 5 V dc;
IC = 1 mA dc; f = 1 kHz
hoe
2N2604
2N2605
40
60
µmhos
µmhos
Small-signal short-
circuit forward-current
transfer ratio
3206
3306
VCE = 5 V dc;
hfe
IC = 1 mA dc; f = 1 kHz
2N2604
2N2605
60
150
180
450
Magnitude of common
emitter small-signal
short-circuit forward-
current transfer ratio
VCE = 5 V dc;
IC = 0.5 mA dc;
f = 30 MHz
|hfe|
1
8
Cobo
Open circuit
3236
3246
3246
3246
VCB = 5 V dc; IE = 0;
6
5
3
3
PF
dB
dB
dB
output capacitance
100 kHz ≤ f ≤ 1 MHz
Noise figure
Noise figure
Noise figure
VCE = 5 V dc; IC = 10 µA dc;
Rg = 10 kΩ; f = 100 Hz
F1
F2
F3
VCE = 5 V dc; IC = 10 µA dc;
Rg = 10 kΩ; f = 1 kHz
VCE = 5 V dc; IC = 10 µA dc;
Rg = 10 kΩ; f = 10 kHz
1/ For sampling plan unless otherwise specified see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in
group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used.
4/ Not required for JANS devices.
5/ Not required for laser marked devices.
13
MIL-PRF-19500/354H
TABLE II. Group E inspection (all quality levels) - for qualification only.
Inspection
MIL-STD-750
Qualification
Method
1051
Conditions
*
Subgroup 1
45 devices
c = 0
Temperature cycling
(air to air)
Test condition C, 500 cycles
Hermetic seal
1071
Fine leak
Gross leak
Electrical measurements
See group A, subgroup 2 herein.
*
Subgroup 2
45 devices
c = 0
Intermittent life
1037
VCB = 10 V dc, 6,000 cycles.
Electrical measurements
See group A, subgroup 2 herein.
Subgroups 3, 4, 5, 6, and 7
Not applicable
*
Subgroup 8
45 devices
c = 0
Reverse stability
1033
Condition A for devices ≥ 400 V dc.
Condition B for devices < 400 V dc.
14
MIL-PRF-19500/354H
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency,
or within the Military Departments' System Command. Packaging data retrieval is available from the managing
Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.)
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents must specify the following:
a. Title, number, and date of this specification.
b. Issue of DoDISS to be cited in the solicitation and, if required, the specified issue of individual documents
referenced (see 2.2.1).
c. Lead finish (see 3.4.1).
d. Type designation and product assurance level.
e. Packaging requirements (see 5.1).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturer’s List QML-19500 whether or
not such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.4 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter
version (example, JANHCA2N2604) will be identified on the QPL.
JANC ordering information
Manufacturer
PIN
43611
34156
2N2604
2N2605
JANHCA2N2604, JANKCA2N2604
JANHCA2N2605, JANKCA2N2605
JANHCB2N2604, JANKCB2N2604
JANHCB2N2605, JANKCB2N2605
*
6.5 Changes from previous issue. The margins of this specification are marked with asterisks to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
15
MIL-PRF-19500/354H
Custodians:
Army - CR
Navy - EC
Air Force - 11
NASA - NA
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2568)
Review activities:
Army - AR, AV, MI
Navy - AS, MC
Air Force - 19
16
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/354H
2. DOCUMENT DATE
5 March 2002
I RECOMMEND A CHANGE:
3. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER, TYPES 2N2604, 2N2604UB, 2N2605 AND
2N2605UB JAN, JANTX, JANTXV, AND JANS, JANHC, JANKC
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
b. ORGANIZATION
c. ADDRESS (Include Zip Code)
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
COMMERCIAL
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
614-692-0510
a. Point of Contact
Alan Barone
DSN
FAX
EMAIL
850-0510
614-692-6939
alan.barone@dscc.dla.mil
c. ADDRESS
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533, Fort Belvoir, VA 22060-6221
Telephone (703) 767-6888 DSN 427-6888
Defense Supply Center Columbus,
ATTN: DSCC-VAC P.O. Box 3990
Columbus, OH 43216-5000
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
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