JANTXV2N3485A [ETC]
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | TO-46 ; 晶体管| BJT | PNP | 60V V（ BR ） CEO | 600MA I（C ） | TO- 46\n
| 型号： | JANTXV2N3485A |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 600MA I(C) | TO-46
|
| 文件： | 总18页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 5 July 2002.
INCH-POUND
MIL-PRF-19500/392F
5 April 2002
SUPERSEDING
MIL-PRF-19500/392E
6 June 2001
PERFORMANCE SPECIFICATION
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING
TYPE 2N3485A, 2N3486A, JAN, JANTX AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for PNP silicon switching transistors. Three
levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (T0-46).
1.3 Maximum ratings.
PT
VCBO
VCEO
VEBO
IC
Top and TST
RqJC
RqJA
TA =+25°C TC = +25°C
(1)
(2)
W
0.5
W
2.0
V dc
60
V dc
60
V dc
5
mA dc
600
°C
-65 TO
+200
°C /W
87
°C /mW
0.325
(1) Derate linearly at 3.08 mW/°C above TA = +37.5°C.
(2) Derate linearly at 11.43 mW/°C above TC = +25°C.
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in
improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC,
P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD
Form 1426) appearing at the end of this document or by letter.
AMSC N/A
FSC 5961
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
MIL-PRF-19500/392F
1.4 Primary electrical characteristics.
hFE2
VCE = 10 V dc
IC = 1.0 mA dc
hFE4
VCE = 10 V dc
IC = 150 mA dc
|hfe|
VCE = 20 V dc
IC = 50 mA dc
Cobo
100 kHz £ f £
Switching
toff
1 Mhz
(1)
f = 100 MHz VCB = 10 V dc
IE = 0
ton
ton + toff
(nonsat-
urated)
2N3485A 2N3486A 2N3485A 2N3486A
pF
ns 2N3485A 2N3486A
45 175 200
ns
18
Min
Max
40
100
40
100
300
2.0
10
120
8
(1) Pulsed (see 4.5.1).
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are
those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and
supplement thereto, cited in the solicitation (see 6.2).
SPECIFICATION
DEPARTMENT OF DEFENSE
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
STANDARD
DEPARTMENT OF DEFENSE
MIL-STD-750 - Test Methods for Semiconductor Devices.
(Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the
Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue,
Philadelphia, PA 19111-5094.)
2
MIL-PRF-19500/392F
FIGURE 1. Physical dimensions - TO-46.
3
MIL-PRF-19500/392F
Dimensions
Inches Millimeters
Symbol
Notes
Min
Max
.195
.085
.230
Min
4.52
1.65
5.31
Max
4.95
2.16
5.84
CD
CH
HD
LC
LD
LL
LU
L1
L2
Q
.178
.065
.209
.100 TP
.021
.750 12.70 19.05
2.54 TP
6
7
7
7
7
7
7
10
3
.53
.500
.016
.019
.050
.41
.48
1.27
.250
6.35
.040
.010
.048
.046
1.02
.25
1.22
1.17
r
TL
TW
a
.028
.036
.71
.91
6
45° TP
45° TP
NOTES:
1. Dimension are in inches.
2. Metric equivalents are given for general information only.
3. Beyond r (radius) maximum, TL shall be held for a minimum length of .011 (0.28 mm).
4. Dimension TL measured from maximum HD.
5. Body contour optional within zone defined by HD, CD, and Q.
6. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within
.008 inch (0.041 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at
MMC. The device may be measured by direct methods.
7. Dimension LU applies between L1 and L2. Dimension LD applies between L2 and LL minimum.
Diameter is uncontrolled in L1 and beyond LL minimum.
8. All three leads.
9. The collector shall be internally connected to the case.
10. Dimension r (radius) applies to both inside corners of tab.
11. In accordance with ANSI Y14.5M, diameters are equivalent to F x symbology.
12. Lead 1 = emitter, lead 2 = base, lead 3 = collector.
FIGURE 1. Physical dimensions - TO-46 – Continued.
4
MIL-PRF-19500/392F
2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited
herein, the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws
and regulations unless a specific exemption has been obtained.
3. REQUIREMENTS
3.1 General. The requirements for acquiring the product described herein shall consist of this document and
MIL-PRF-19500.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as
specified in MIL-PRF-19500.
3.4 Interface and physical dimensions. The interface and physical dimensions shall be as specified in
MIL-PRF-19500, and figure 1 (T0-46 ) herein.
3.5 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.6 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance
characteristics are as specified in 1.3, 1.4, and table I herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in paragraphs
4.4.2 and 4.4.3 herein.
3.8 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking
may be omitted from the body, but shall be retained on the initial container.
3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
4. VERIFICATION
4.1 Classification of inspections. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4).
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
* 4.4.1 Group E qualification. Group E qualification shall be performed herein for qualification or requalification
only. In case qualification was awarded to a prior revision of the associated specification that did not request the
performance of group E tests, the tests specified in group E herein shall be performed by the first inspection lot to
this revision to maintain qualification.
5
MIL-PRF-19500/392F
* 4.3 Screening. Screening shall be in accordance with table IV of MIL-PRF-19500, and as specified herein. The
following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I
herein shall not be acceptable.
Screen (see table IV of
MIL-PRF-19500)
Measurements
JANTX & JANTXV levels
3c
9
Thermal impedance, method 3131 of MIL-STD-750.
Not applicable.
10
11
24 hours minimum.
ICBO2, hFE4
12
13
See 4.3.1, t = 80 hours minimum
Subgroup 2 of table I herein;
DICBO2 = 100 percent of initial value or 5 nA dc
whichever is greater. DhFE4 = ± 15 percent.
4.3.1 Power burn-in conditions. Power burn-in conditions are as follows: TA = room ambient as defined in the
general requirements of MIL-STD-750, section 4.5: VCB = 10 - 30 V dc; power shall be applied to achieve TJ =
135°C minimum and a minimum power dissipation of PD = 75 percent of the maximum rated PT as defined in 1.3.
NOTE: No heat sink or forced air cooling on the devices shall be permitted.
4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as
specified herein.
4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with table V of MIL-PRF-19500
and table I herein.
4.4.2 Group B inspection. See 4.4.2.1 for JAN, JANTX, and JANTXV group B testing. Electrical measurements
(end-points) and delta requirements for JAN, JANTX, and JANTXV shall be after each step in 4.4.2.1 and shall be in
accordance with group A, subgroup 2 and 4.5.2 herein.
6
MIL-PRF-19500/392F
4.4.2.1 Group B inspection, (JAN, JANTX, and JANTXV. 1/
Step
1
Method
1039
Condition
Steady-state life: Test condition B, 340 hours, VCB = 10 - 30 V dc, power
shall be applied to achieve TJ = 150°C minimum and a minimum power
dissipation PD = 75 percent of maximum rated PT as defined in 1.3 herein.
n = 45, c = 0.
2
3
1039
1032
The steady-state life test of step 1 shall be extended to 1,000 hours for
each die design. Samples shall be selected from a wafer lot every twelve
months of wafer production. Group B, step 2 shall not be required more
than once for any single wafer lot. n = 45, c = 0.
High- temperature life (non-operating),
n = 22, c = 0.
TA = +200°C, t = 340 hours,
4.4.2.2 Group B sample selection. Samples selected from group B inspection shall meet all of the following
requirements.:
a. For JAN, JANTX and JANTXV samples shall be selected randomly from a minimum of three wafers (or
from each wafer in the lot) from each wafer lot.
b. Must be chosen from an inspection lot that has been submitted to and passed group A, subgroup 2,
conformance inspection. When the final lead finish is solder or any plating prone to oxidation at high
temperature, the samples for life test (group B for JAN, JANTX, and JANTXV) may be pulled prior to the
application of final lead finish.
4.4.3 Group C inspection, Group C inspection shall be conducted in accordance with the conditions specified in
4.4.3.1 (JAN, JANTX, and JANTXV) herein for group C testing. Electrical measurements (end-points) and delta
requirements shall be in accordance with group A, subgroup 2 and 4.5.2 herein.
4.4.3.1 Group C inspection, table VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500.
Subgroup
C2
Method
2036
Condition
Test condition E.
*
C5
C6
3131
R
qJC = 87°C/W.
Not applicable.
4.4.3.2 Group C sample selection. Samples for subgroups in group C shall be chosen at random from any
inspection lot containing the intended package type and lead finish procured to the same specification which is
submitted to and passes group A tests for conformance inspection. Testing of a subgroup using a single device type
enclosed in the intended package type shall be considered as complying with the requirements for that subgroup.
__________
1/ Separate samples may be used for each step. In the event of a group B failure, the manufacturer may pull a new
sample at double size from either the failed assembly lot or from another assembly lot from the same wafer lot. If
the new “assembly lot” option is exercised, the failed assembly lot shall be scrapped.
7
MIL-PRF-19500/392F
* 4.4.4 Group E inspection. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table IX of MIL-PRF-19500 and as specified herein. Electrical measurements (end-
points) and delta measurements shall be in accordance with the applicable steps of 4.5.2 and table I subgroup 2
herein.
4.5 Method of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows:
4.5.1 Pulse measurements. Conditions for pulse measurement shall be as specified in section 4 of MIL-STD-750.
4.5.2 Delta requirements. Delta requirements shall be as specified below:
Step
Inspection
MIL-STD-750
Conditions
Symbol
Limit
Method
3036
1
2
Collector-base cutoff
current
Bias condition D,
VCB = 50 V dc
100 percent of initial
value or ± 5 nA dc,
whichever is greater.
DICB02 (1)
DhFE4 (1)
Forward current
transfer ratio
3076
±25 percent change
from initial reading.
VCE = 10 V dc; IC = 150
mA dc; pulsed see 4.5.1
(1) Devices which exceed the group A limits for this test shall not be accepted.
8
MIL-PRF-19500/392F
TABLE I. Group A inspection.
*
Inspection 1/
Subgroup 1 2/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
2071
Min
Max
Visual and mechanical
inspection 3/
n = 45 devices, c = 0
Solderability 3/
2026
1022
n = 15 leads, c = 0
Resistance to solvents
3/ 4/
n = 15 devices, c = 0
Temp cycling 3/
1051
1071
Test condition C, 25 cycles. n =
22 devices, c = 0
Heremetic seal
Fine leak
n = 22 devices, c = 0
Gross leak
Electrical
Group A, subgroup 2
measurements
Bond strength 3/
2037
2075
Precondition TA = + 250°C at t =
24 hours or TA = + 300°C at t = 2
hours n = 11 wires, c = 0
Decap internal visual
(design verification)
n = 4, c = 0
Subgroup 2
Collector to base cutoff
current
3036
3061
3011
10
10
mA dc
mA dc
V dc
Bias condition D; VCB = 60 V dc
Bias condition D; VEB = 5 V dc
ICBO1
Emitter to base cutoff
current
IEBO1
Breakdown voltage,
collector to emitter
60
Bias condition. D; IC = 10 mA dc;
pulsed (see 4.5.1)
V(BR)CEO
Collector to base cutoff
current
3036
10
nA dc
Bias condition D; VCB = 50 V dc
ICBO2
See footnotes at end of table.
9
MIL-PRF-19500/392F
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
Min
Max
50
Subgroup 2 - Continued.
Emitter to base cutoff
current
3061
3076
nA dc
Bias condition D; VEB = 3.5 V dc
VCE = 10 V dc; IC = 0.1 mA dc
IEBO2
Forward-current transfer
ratio
hFE1
2N3485A
2N3486A
40
75
Forward-current transfer
ratio
3076
3076
3076
3076
VCE = 10 V dc; IC = 1.0 mA dc
hFE2
hFE3
hFE4
hFE5
2N3485A
2N3486A
40
100
Forward-current transfer
ratio
VCE = 10 V dc; IC = 10 mA dc
2N3485A
2N3486A
40
100
Forward-current transfer
ratio
VCE = 10 V dc; IC = 150 mA dc
pulsed (see 4.5.1)
2N3485A
2N3486A
40
100
120
300
Forward-current transfer
ratio
VCE = 10 V dc; IC = 500 mA dc
pulsed (see 4.5.1)
2N3485A
2N3486A
40
50
Saturation voltage and
resistance
3071
3071
0.4
1.6
V dc
V dc
IC = 150 mA dc; IB = 15 mA dc;
pulsed (see 4.5.1)
VCE(SAT)1
Saturation voltage and
resistance
IC = 500 mA dc; IB = 50 mA dc;
pulsed (see 4.5.1)
VCE(SAT)2
See footnotes at end of table.
10
MIL-PRF-19500/392F
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
Min
Max
Subgroup 2 - Continued.
Base-emitter voltage
(saturated)
3066
3066
1.3
2.6
V dc
Test condition A; IC = 150 mA dc;
IB = 15 mA dc; pulsed (see 4.5.1)
VBE(SAT)1
Base-emitter voltage
(saturated)
V dc
Test condition A; IC = 500 mA dc;
IB = 50 mA dc; pulsed (see 4.5.1)
VBE(SAT)2
Subgroup 3
High - temperature
operation
TA = +150°C
Collector - base cutoff
current
10
mAdc
Bias condition D; VCB = 50 V dc
TA = -55°C
ICBO3
Low - temperature
operation
Forward-current transfer
ratio
3076
3206
VCE = 10 V dc; IC = 1.0 mA dc
hFE6
2N3485A
2N3486A
20
40
Subgroup 4
Small signal short circuit
forward current transfer
ratio
VCE = 10 V dc; IC = 1 mA dc; f =
1 kHz
hfe
2N3485A
2N3486A
40
100
Magnitude of small
signal short-circuit
forward-current transfer
ratio
3306
3236
2.0
10
VCE = 20 V dc; IC = 50 mA dc; f = |hfe|
100 MHz
Open circuit output
capacitance
VCB = 10 V dc; IE = 0; 100 kHz £ f Cobo
£ 1 MHz
8
pF
See footnotes at end of table.
11
MIL-PRF-19500/392F
TABLE I. Group A inspection - Continued.
Inspection 1/
MIL-STD-750
Conditions
Symbol
Limit
Unit
Method
3240
Min
Max
Subgroup 4 - Continued.
Input capacitance
(output open-circuited)
30
45
pF
VEB = 2.0 V dc; IC = 0; 100 kHz £
f £ 1 MHz
Cibo
Turn-on time
Turn-off time
(See figure 2)
(See figure 3)
ns
ns
ton
toff
2N3485A
2N3486A
175
200
Pulse response
(nonsaturated)
(See figure 4)
18
ns
ton + toff
Subgroup 5, 6 and 7
Not applicable
1/ For sampling plan see MIL-PRF-19500.
2/ For resubmission of failed subgroup A1, double the sample size of the failed test or sequence of tests. A failure in
group A, subgroup 1 shall not require retest of the entire subgroup. Only the failed test shall be rerun upon
submission.
3/ Separate samples may be used. Subgroups 1 and 7 may be performed simultaneously.
4/ Not required for laser marked devices.
12
MIL-PRF-19500/392F
TABLE II. Group E inspection (all quality levels) – for qualification only.
MIL-STD-750
*
Inspection
Qualification
Method
1051
Conditions
Subgroup 1
45 devices
c = 0
Temperature cycling
(air to air)
Test condition C, 500 cycles
Hermetic seal
Fine leak
Gross leak
1071
1037
Electrical measurements
Subgroup 2
See group A, subgroup 2 and 4.5.2 herein.
45 devices
c = 0
Intermittent life
VCB = 10 V dc, 6,000 cycles.
Electrical measurements
See group A, subgroup 2 and 4.5.2 herein.
Subgroups 3. 4,
5, 6 and 7
Not applicable
Subgroup 8
45 devices
c = 0
Reverse stability
1033
Condition A for devices ³ 400 V
Condition B for devices < 400 V
13
MIL-PRF-19500/392F
NOTES:
1. The rise time (tr) and fall time (tf) of the applied pulse shall be £ 2.0 ns; duty cycle £ 2 percent; generator
source impedance shall be 50 ohms.
2. Output sampling oscilloscope: Zin ³ 100 kW; Cin £ RPF; rise time £ 0.2 ns.
FIGURE 2. Saturated turn-on switching time test circuit.
NOTES:
1. The rise time (tr) and fall time (tf) of the applied pulse shall be £ 2.0 ns; duty cycle £ 2 percent; generator
source impedance shall be 50 ohms.
2. Output sampling oscilloscope: Zin ³ 100 kW; Cin £ RPF; rise time £ 0.2 ns.
FIGURE 3. Saturated turn-off switching time test circuit.
14
MIL-PRF-19500/392F
NOTES:
1. The rise time (tr) and fall time (tf) of the applied pulse shall be £ 2.0 ns; duty cycle £ 2 percent; generator
source impedance shall be 50 ohms.
2. Output sampling oscilloscope: Zin ³ 100 kW; Cin £ RPF; rise time £ 0.2 ns.
FIGURE 4. Nonsaturated turn-on switching time test circuit.
15
MIL-PRF-19500/392F
5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or
order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to
contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements
are maintained by the Inventory Control Points' packaging activity within the Military Department or Defense Agency,
or within the Military Departments' System Command. Packaging data retrieval is available from the managing
Military Departments' or Defense Agency's automated packaging files, CD-ROM products, or by contacting the
responsible packaging activity.
6. NOTES
6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification.
6.2 Acquisition requirements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Issue of DoDISS to be cited in the solicitation and, if required, the specified issue of individual documents
referenced (see 2.2.1).
c. Lead finish (see 3.4.1).
d. Type designation and quality assurance level.
e. Packaging requirements (see 5.1).
6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which
are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from
Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000.
6.4 Changes from previous issue. The margins of this revision are marked with an asterisk to indicate where
changes from the previous issue were made. This was done as a convenience only and the Government assumes
no liability whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
16
MIL-PRF-19500/392F
Custodians:
Army - CR
Navy - EC
Air Force - 11
DLA - CC
Preparing activity:
DLA - CC
(Project 5961-2561)
Review activities:
Army - AV, MI, SM
Navy - AS, MC
Air Force - 19, 71, 99
17
STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL
INSTRUCTIONS
1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision
letter should be given.
2. The submitter of this form must complete blocks 4, 5, 6, and 7.
3. The preparing activity must provide a reply within 30 days from receipt of the form.
NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on
current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced
document(s) or to amend contractual requirements.
1. DOCUMENT NUMBER
MIL-PRF-19500/392F
2. DOCUMENT DATE
5 April 2002
I RECOMMEND A CHANGE:
1. DOCUMENT TITLE
SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING TYPE 2N3485A, 2N3486A, JAN, JANTX AND
JANTXV
4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.)
5. REASON FOR RECOMMENDATION
6. SUBMITTER
a. NAME (Last, First, Middle initial)
c. ADDRESS (Include Zip Code)
b. ORGANIZATION
d. TELEPHONE (Include Area Code)
7. DATE SUBMITTED
COMMERCIAL
DSN
FAX
EMAIL
8. PREPARING ACTIVITY
b. TELEPHONE
Commercial
614-692-0510
a. Point of Contact
Alan Barone
DSN
FAX
EMAIL
850-0510
614-692-6939
alan.barone@dscc.dla.mil
c. ADDRESS
Defense Supply Center Columbus,
ATTN: DSCC-VAC
IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT:
Defense Standardization Program Office (DLSC-LM)
8725 John J. Kingman, Suite 2533
P.O. Box 3990
Fort Belvoir, VA 22060-6221
Columbus, OH 43216-5000
Telephone (703) 767-6888 DSN 427-6888
DD Form 1426, Feb 1999 (EG)
Previous editions are obsolete
WHS/DIOR, Feb 99
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