LD0810-50
更新时间：2024-09-18 03:04:26
品牌：ETC
描述：LDMOS RF Power Transistors 50 Watts， 800-1000 MHz， 26 Volts
概述
数据手册LD0810-50 概述
LDMOS RF Power Transistors 50 Watts， 800-1000 MHz， 26 Volts
LDMOS射频功率晶体管50瓦， 800至1000兆赫， 26伏\n
LD0810-50 数据手册
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Preliminary Specifications
LDMOS RF Power Transistor
50 Watts, 800-1000 MHz, 26V
Features
Outline Drawing 1, 2
•
•
•
•
•
•
•
New LDMOS Technology
Broadband Class AB Operation
.800 [20.32]
.562 [14.27]
Characterized for GSM TDMA Applications
Gold Metalization System for Reliability
Excellent Thermal Characteristics
-30dBc Typical Third Order IMD at 46 dBm
No Internal Matching
2X .215 [5.46]
DRAIN
.235 [5.97]
.230 [5.84]
2X .130 [3.30]
φ
Absolute Maximum Rating1
SOURCE
Parameter
Symbol
VDS
VGS
Rating
601
20
5.0
70
-65 to +175
-40 to +80
200
Units
V
V
A
W
°C
°C
°C
.235 [5.97]
Drain-Source Voltage
Gate-Source Voltage
Drain Current
GATE
ID
.350 [8.89]
Total Power Dissipation
Storage Temperature
Operating Temperature
Junction Temperature
PTOT
TSTG
TOPR
Tj
+ .0015 [0.04]
- .0010 [0.03]
2X .0035 [0.09]
.158 [4.01] + .010 [0.25]
1. Preliminary parts meet a 55V Specification. No other specifica-
tions are affected.
.080 [2.03]
Notes: (unless otherwise specified)
1. Dimensions are in (mm)
2. Tolerance: inches ± .005” (millimeters ±0.13mm)
Large Signal Device Impedance
ZIF1 (Ω)
1.6 - j 1.5
1.6 - j 1.9
1.5 - j 2.3
ZOF2 (Ω)
2.3 + j 0.3
2.4 - j 0.2
2.5 - j 0.5
F (MHz)
850
900
950
1. ZIF - The impedance measured looking into the Gate side of the
optimally tuned test fixture.
2. ZOF - The impedance measured looking into the Drain side of the
optimally tuned test fixture.
Electrical Specifications at +25°C
Symbol
BVDSS
IDSS
Parameters
Drain-Source Breakdown
Drain-Source Leakage
Gate-Source Breakdown
Gate “On” Voltage
Transconductance
On-Site Resistance
Power Gain
Test Conditions
Units
V
Min.
Max
—
ID = 10.0 mA
601
—
VDS = 25 V
mA
V
2.0
—
BVGSS
VGS(ON)
GM
IGS = 1 µA, VDS = 0.0 V
20
2.5
0.5
—
IDS = 300 mA, VDS = 10 V
V
5.0
—
IDS = 1000 mA, VDS = 10 V
S
Ω
RDS(ON)
PG
IDS = 200 mA, VDS = 10 V
0.5
—
VCC = 26V, PO = 50 W, F=960 MHz, IDQ = 400 mA
VCC = 26V, PO = 50 W, F=960 MHz, IDQ = 400 mA
VCC = 26V, PO = 50 W, F=960 MHz, IDQ = 400 mA
dB
W
11
—
PIN
Input Power
4.0
—
ηD
Drain Efficiency
%
50
—
VSWR-T
RTH(JC)
Load Mismatch Tolerance
Thermal Resistance
V
CC = 26V, PO = 50 W, F=900 MHz, IDQ = 400 mA
—
TBD
TBD
VCC = 26V, PO = 50 W, F=900 MHz, IDQ = 400 mA
°C/W
—
1. Preliminary parts meet a 55V Specification. No other specifications are affected.
V1.00
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The preliminary specifications data sheet contains typical electrical specifications which may change prior to final introduction.
LDMOS RF Power Transistor 50 Watts, 800-1000 MHz, 26 Volts
Typical Performance Curves
LD0810-50
Output Power and Drain Efficiency vs. Input Power
Gain vs. Output Power
16.0
15.0
14.0
13.0
12.0
11.0
10.0
9.0
80
Vdd = 26 V
F = 900 MHz
Idq = 300
70
60
50
40
30
20
10
0
Output
Drain
8.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
50.0
0
2
4
6
8
10
12
Output Power (dBm)
Input Power (W)
Typical Power Transfer Curve
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
100.0
90.0
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
0.0
Vdd = 26V
F = 900 MHz
Idq = 300 mA
Output Power
Drain Efficiency
0.0
0.0
5.0
10.0
15.0
20.0
25.0
30.0
35.0
40.0
45.0
PIN (dBm)
V1.00
M/A-COM Division of AMP Incorporated Q North America: Tel. (800) 366-2266, Fax (800) 618-8883 Q Asia/Pacific: Tel.+85 2 2111 8088, Fax +85 2 2111 8087
Q Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
www.macom.com
AMP and Connecting at a Higher Level are trademarks.
The preliminary specifications data sheet contains typical electrical specifications which may change prior to final introduction.
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