LNA2403F/LNA2402L(LN151F/LN151L) [ETC]

LNA2403F. LNA2402L (LN151F. LN151L) - GaAs Infrared Light Emitting Diodes ; LNA2403F 。 LNA2402L ( LN151F LN151L ) - 砷化镓红外发光二极管\n
LNA2403F/LNA2402L(LN151F/LN151L)
型号: LNA2403F/LNA2402L(LN151F/LN151L)
厂家: ETC    ETC
描述:

LNA2403F. LNA2402L (LN151F. LN151L) - GaAs Infrared Light Emitting Diodes
LNA2403F 。 LNA2402L ( LN151F LN151L ) - 砷化镓红外发光二极管\n

二极管
文件: 总3页 (文件大小:61K)
中文:  中文翻译
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Infrared Light Emitting Diodes  
Unit : mm  
Glass window  
LNA2403F  
LNA2403F, LNA2402L  
4.6 0.15  
(LN151F, LN151L)  
GaAs Infrared Light Emitting Diodes  
2- 0.45 0.05  
2.54 0.25  
For optical control systems  
Features  
High-power output, high-efficiency : PO = 7.5 mW (typ.)  
1.0  
0.2  
Fast response and high-speed modulation capability :  
45  
0.15  
3
tr, tf = 1 µs (typ.)  
1.0  
Infrared light emission close to monochromatic light :  
λP = 950 nm (typ.)  
2
1
Narrow directivity, suitable for effective use of radiant power  
(LNA2402L (LN151L))  
5.75 max.  
1: Anode  
2: Cathode  
Wide directivity, matched for external optical systems  
(LNA2403F (LN151F))  
Unit : mm  
LNA2402L  
4.6 0.15  
TO-18 standard type package  
Glass lens  
Absolute Maximum Ratings (Ta = 25˚C)  
Parameter  
Symbol  
Ratings  
Unit  
mW  
mA  
A
Power dissipation  
PD  
160  
2- 0.45 0.05  
2.54 0.25  
Forward current (DC)  
Pulse forward current  
Reverse voltage (DC)  
Operating ambient temperature  
Storage temperature  
IF  
100  
*
IFP  
2
VR  
Topr  
Tstg  
3
V
1.0  
–25 to +100  
–30 to+100  
˚C  
0.2  
45  
˚C  
0.15  
3
*
1.0  
f = 100 Hz, Duty cycle = 0.1 %  
2
1
1: Anode  
2: Cathode  
5.75 max.  
Electro-Optical Characteristics (Ta = 25˚C)  
Parameter  
Radiant power  
Symbol  
Conditions  
min  
typ  
max  
Unit  
mW  
nm  
nm  
V
PO  
λP  
∆λ  
VF  
IR  
Ct  
tr  
IF = 100mA  
5
7.5  
950  
50  
Peak emission wavelength  
Spectral half band width  
Forward voltage (DC)  
Reverse current (DC)  
Capacitance between pins  
Rise time  
IF = 100mA  
IF = 100mA  
IF = 100mA  
VR = 3V  
1.3  
1.6  
10  
µA  
pF  
VR = 0V, f = 1MHz  
60  
1
µs  
IFP = 100mA  
Fall time  
tf  
1
µs  
LNA2403F  
32  
8
deg.  
deg.  
Half-power angle  
θ
The angle in which radiant intencity is 50%  
LNA2402L  
Note) The part numbers in the parenthesis show conventional part number.  
1
Infrared Light Emitting Diodes  
LNA2403F, LNA2402L  
IF — Ta  
IFP — Duty cycle  
IFP — VF  
120  
10 2  
10  
tw = 10µs  
Ta = 25˚C  
t
w = 10µs  
10 3  
f = 100Hz  
Ta = 25˚C  
100  
80  
10 2  
10  
1
60  
1
40  
10 –1  
10 –1  
10 –2  
20  
0
10 –2  
10 –1  
– 25  
0
20  
40  
60  
80  
100  
1
10  
10 2  
0
1
2
3
4
5
Ambient temperature Ta (˚C )  
Duty cycle (%)  
Forward voltage VF (V)  
VF — Ta  
PO — IFP  
PO — Ta  
1.6  
1.2  
0.8  
0.4  
0
10  
(1) tw = 10µs  
Duty Cycle = 0.1%  
(2) DC  
Ta = 25˚C  
IF = 50mA  
10 3  
IF = 100mA  
10 2  
10  
(1)  
50mA  
10mA  
1
(2)  
1
10 –1  
10 –2  
10 –1  
– 40  
– 40  
0
40  
80  
120  
1
10  
Pulse forward current IFP (mA)  
10 2  
10 3  
10 4  
0
40  
80  
Ambient temperature Ta (˚C )  
Ambient temperature Ta (˚C )  
Spectral characteristics  
Directivity characteristics  
Frequency characteristics  
0˚  
100  
10˚  
20˚  
100  
80  
60  
40  
20  
0
10 2  
10  
I
F = 100mA  
Ta = 25˚C  
Ta = 25˚C  
Ta = 25˚C  
90  
80  
LN151F  
30˚  
40˚  
70  
60  
50  
40  
1
LN151L  
50˚  
60˚  
30  
2 0  
10 –1  
70˚  
80˚  
90˚  
10 –2  
10  
800 850 900 950 1000 1050 1100  
10 2  
10 3  
10 4  
Wavelength λ (nm)  
Frequency f (kHz)  
2
Caution for Safety  
Gallium arsenide material (GaAs) is used  
in this product.  
Therefore, do not burn, destroy, cut, crush, or chemi-  
cally decompose the product, since gallium arsenide  
material in powder or vapor form is harmful to human  
health.  
Observe the relevant laws and regulations when dispos-  
ing of the products. Do not mix them with ordinary in-  
dustrial waste or household refuse when disposing of  
GaAs-containing products.  
DANGER  
Request for your special attention and precautions in using the technical information  
and semiconductors described in this material  
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the  
products or technologies described in this material and controlled under the "Foreign Exchange and Foreign  
Trade Law" is to be exported or taken out of Japan.  
(2) The technical information described in this material is limited to showing representative characteristics and  
applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting  
of relative rights, or the granting of any license.  
(3) The products described in this material are intended to be used for standard applications or general electronic  
equipment (such as office equipment, communications equipment, measuring instruments and household ap-  
pliances).  
Consult our sales staff in advance for information on the following applications:  
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion  
equipment, life support systems and safety devices) in which exceptional quality and reliability are required,  
or if the failure or malfunction of the products may directly jeopardize life or harm the human body.  
Any applications other than the standard applications intended.  
(4) The products and product specifications described in this material are subject to change without notice for  
reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the prod-  
ucts, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifi-  
cations satisfy your requirements.  
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the  
range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for  
any defect which may arise later in your equipment.  
Even when the products are used within the guaranteed values, redundant design is recommended, so that  
such equipment may not violate relevant laws or regulations because of the function of our products.  
(6) When using products for which dry packing is required, observe the conditions (including shelf life and after-  
unpacking standby time) agreed upon when specification sheets are individually exchanged.  
(7) No part of this material may be reprinted or reproduced by any means without written permission from our  
company.  
Please read the following notes before using the datasheets  
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconduc-  
tor products best suited to their applications.  
Due to modification or other reasons, any information contained in this material, such as available product  
types, technical data, and so on, is subject to change without notice.  
Customers are advised to contact our semiconductor sales office and obtain the latest information before  
starting precise technical research and/or purchasing activities.  
B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always  
the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any  
liability for any damages arising from any errors etc. that may appear in this material.  
C. These materials are solely intended for a customer's individual use.  
Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or  
distributing this material to a third party, via the Internet or in any other way, is prohibited.  
2001 MAR  

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