M75010 [ETC]
PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT; 与互连光电感烟探测器
| 型号： | M75010 |
| 厂家： | 
ETC |
| 描述： | PHOTOELECTRIC SMOKE DETECTOR WITH INTERCONNECT |
| 文件： | 总10页 (文件大小：168K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
一華半導體股份有限公司
SMOKE DETECTOR
MOSDESIGN SEMICONDUCTOR CORP.
PHOTOELECTRIC SMOKE DETECTOR
WITH INTERCONNECT
M75010
GENERAL DESCRIPTION
The M75010 is a very low-power IC providing all of the required features for a photoelectric type smoke detector.
This device can be used in conjunction with an infrared photoelectric chamber to sense scattered light from smoke particles.
A variable-gain photo amplifier can be directly interfaced to an infrared emitter / detector pair. The amplifier gain levels are
determined by two external capacitors that are then internally selected depending on the operating mode. Low gain is selected
during standby and timer modes. During a local alarm this low gain is increased ( internally ) by ~ 10% to reduce false triggering.
High gain is used during the push-button test and during standby to periodically monitor the chamber sensitivity.
FEATURES
‧Interconnect up to 50 detectors.
‧Piezoelectric horn driver.
‧All internal low-battery detection.
‧Power-on reset.
‧Built-in circuits to reduce false triggering.
‧6V to 12V operating voltage range.
‧ESD-Protection circuitry on all pins.
APPLICATIONS
‧Smoke detector.
PIN ASSIGNMENT
M75010P
C1
1
16
TEST
C2
DETECT
STROBE
TRIP
VSS
OSCR
VDD
OSCC
IRED
I/O
LED
FEEDBACK
HORN2
8
9
HORN1
1/10
2006-01-25
一華半導體股份有限公司
SMOKE DETECTOR
MOSDESIGN SEMICONDUCTOR CORP.
PHOTOELECTRIC SMOKE DETECTOR
WITH INTERCONNECT
M75010
ABSOLUTE MAXIMUM RATING
Sym.
Parameter
Rating
Unit
VDD
VIN
IIN
Supply Voltage Range
Input Voltage Range
-0.5 ~ 13
-0.3 to VDD +0.3
10
V
V
Input Current
mA
℃
℃
TA
Operating Temperature Range
Storage Temperature Range
-25 ~ 75
TS
-55 to 125
PIN AND CIRCUIT DESCRIPTION
Pin No Pin Name
Description
A capacitor connected to this pin determines the gain of the photo amplifier during the push-to-test mode
and during the chamber monitor test. A typical value for this high-gain mode is 0.047μF but should be
selected based on the photo chamber background reflections reaching the detector and the desired level of
sensitivity. Ae ≒ 1 + ( C1 / 10 ) where C1 is in pF. Ae should not exceed 10,000.
1
2
C1
C2
A capacitor connected to this pin determines the gain of the photo amplifier during standby. A typical value
for this low-gain mode is 4700 pF but should be selected based on a specific photo chamber and the
desired level of sensitivity to smoke. Ae ≒ 1 + ( C2 / 10 ) where C2 is in pF. Ae should not exceed
10,000.
This is the input to the photo amplifier and is connected to the cathode of the photo diode. The photo diode
is operated at zero bias and should have low darkleakage current and low capacitance.
3
4
5
DETECT
STROBE
VDD
This output provides a strobed , regulated voltage of VDD-5V. The minus side of all internal and external
photo amplifier circuitry is referenced to this pin.
This pin is connected to the most-positive supply potential and can range from 6V to 12V with respect to
VSS.
This output provides a pulsed base current for the external NPN transistor , which drives the IR emitter. Its
beta should be greater than 100. The IRED output is not active , to minimize noise impact , when the horn
and visible LED outputs are active.
6
IRED
A connection at this pin allows multiple smoke detectors to be interconnected. If a local smoke condition
occurs , this pin is driven high. As an input , this pin is sampled nominally every 1.35 seconds during
standby. Any local-alarm condition causes this pin to be ignored as an input.
7
I/O
An internal NMOS device acts as a charge dump to aid in applications involving a large ( distributed )
capacitance. The charge dump is activated at the end of local or test alarm. This pin also has an on-chip
pull-down resistor and must be left unconnected if not used. In application , there is a series current-
limiting resistor to other smoke alarms.
These three pins are used in conjunction with external passive components and a self-resonating
piezoelectric transducer. HORN1 is connected to the piezo metal support electrode ; the complementary
output , HORN2 , is connected to the ceramic electrode and the FEEDBACK input to the feedback
electrode.
8
9
HORN1
HORN2
A continuous modulated tone indicates either a local or remote alarm condition. A short ( 10ms ) chirp
indicates a low-battery chirp occurs almost simultaneous with the visible LED flash. If the FEEDBACK
pin is not used , it must be connected to VDD or VSS.
10 FEEDBACK
2/10
2006-01-25
一華半導體股份有限公司
SMOKE DETECTOR
MOSDESIGN SEMICONDUCTOR CORP.
PHOTOELECTRIC SMOKE DETECTOR
WITH INTERCONNECT
M75010
This open-drain NMOS output is used to directly drive a visible LED. The low-battery test does not occur
coincident with any other test or alarm signal. The LED also indicates detector status as follows (with
component values as in the typical application , all times nominal)：
Standby ─ Pulses every 43 seconds.
Local Smoke ─ Pulses every 0.67 seconds.
Remote Alarm ─ No pulses.
11
12
LED
Test Mode ─ Pulses every 0.67 seconds.
A capacitor between this pin and VDD , along with a parallel resistor , forms part of a two-terminal
oscillator and sets the internal clock low time. With component values as shown , this nominal time is 11
ms and essentially the oscillator period.
OSCC
A resistor between this pin and OSCC (pin 12 ) is part of the two-terminal oscillator and sets the internal
clock high time , which is also the IRED pulse width. With component values as shown , this nominal time is
105μs .
13
14
15
OSCR
VSS
This pin is connected to the most negative supply potential ( usually ground ).
This pin is connected to an external voltage which determines the low-supply alarm threshold. The trip
voltage is obtained through a resistor divider connected between the VDD and LED pins. The low-supply
alarm threshold voltage ( in volts ) ≒ ( 5R15/R14 ) + 5 where R6 and R7are in the same units.
TRIP
This pin has an internal pull-down device and is used to manually invoke a test mode. The Push-to-Test
Mode is initiated by a high logic level on this pin ( usually the depression of a normally open push-button
switch to VDD ). After one oscillator cycle, IRED pulse every 336 ms ( nominal ) and amplifier gain is
increased by internal selection of C1. Background reflections in the smoke chamber can be used to
simulate a smoke condition. After the third IRED pulse , a successful test ( three consecutive simulated
smoke conditions ) activates the horn drivers and the I/O pin. When the push-button is released , the input
returns to VSS due to the internal pull down. After one oscillator cycle , the amplifier gain returns to
normal and after three additional IRED pulse ( less than one second ) , the device exits this mode and returns
to standby.
16
TEST
3/10
2006-01-25
一華半導體股份有限公司
SMOKE DETECTOR
MOSDESIGN SEMICONDUCTOR CORP.
PHOTOELECTRIC SMOKE DETECTOR
M75010
WITH INTERCONNECT
LOCALALARM TIMING DIAGRAM ( NOT TO SCALE )：
tw(ired)
90%
tf(ired)
tired6
10%
10%
tired3
tired4
IRED
(PIN 6)
tst6
tst3
tst4
tw(st)
STROBE
(PIN 4)
tw(led)
tled6
LED
tled1
(PIN 11)
(NO PULSES)
(AS INPUT)
I/O
(AS OUTPUT)
(AS OUTPUT)
toff(horn)
(PIN 7)
ton(horn)
toff(horn)
tr(io)
ton (horn)
HORN
ENABLE
NO SMOKE
TEST
LOCAL SMOKE
(REMOTE SMOKE
= DON’T CARE)
REMOTE SMOKE
( NO LOCAL SMOKE )
3 STROBE WITHOUT
3 STROBE WITH SMOKE
4/10
2006-01-25
一華半導體股份有限公司
SMOKE DETECTOR
MOSDESIGN SEMICONDUCTOR CORP.
PHOTOELECTRIC SMOKE DETECTOR
WITH INTERCONNECT
M75010
STANDBY TIMING DIAGRAM ( NOT TO SCALE )：
OSCC
(PIN 12)
tOSC
INTERNAL
CLOCK
tired
IRED
(PIN 6)
tW(ired)
STROBE
(PIN4)
tw(st)
tst
tled
LED
(PIN 11)
tW(led)
SAMPLE
SMOKE
thorn
WARNING
CHIRP
HORN
ENABLE
tw(horn)
NO LOW SUPPLY
LOW SUPPLY OR
CHAMBER SENSITIVITY NORMAL
DEGRADED SENSITIVITY
WARNNING CHIRPS ARE OFFSET
5/10
2006-01-25
一華半導體股份有限公司
SMOKE DETECTOR
MOSDESIGN SEMICONDUCTOR CORP.
PHOTOELECTRIC SMOKE DETECTOR
M75010
WITH INTERCONNECT
FUNCTIONAL BLOCK DIAGRAM
I/O
7
FEEDBACK
10
9
VDD
BAND-GAP
VDD
REFERENCE
5
HORN 2
HORN 1
8
-
LOW BATTERY
LOGIC
11
+V
LED
PHOTO AMP
DETECT
C1
3
-
POWER-ON
RESET
1
2
+V
OSCR
13
C2
OSCILLATOR
& TIMING
STROBE
4
12
VDD
6
IRED
VSS
OSCC.
14
15
16
TRIP
TEST
6/10
2006-01-25
一華半導體股份有限公司
SMOKE DETECTOR
MOSDESIGN SEMICONDUCTOR CORP.
PHOTOELECTRIC SMOKE DETECTOR
WITH INTERCONNECT
M75010
DC ELECTRICAL CHARACTERISTICS
(TA=-25℃ ~ 75℃)
Characteristics
Supply Voltage
Sym. Pin VDD
Min.
6.0
—
Typ.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.5
Max.
12
Unit
V
Conditions
—
12
12
12
9
VDD
IDD
μA
12
Average Standby
Operating Supply Current
Low-Level Input Voltage
—
2.0
3.0
1.5
2.7
7.0
0.5
—
mA During Strobe ON , IRED OFF
—
mA During Strobe ON , IRED ON
—
7
10
16
15
7
V
V
V
V
V
V
V
V
—
9
VIL
—
9
—
9
9
3.2
6.3
8.5
1.6
—
—
10
16
15
12
15
12
15
16
16
7
9
High-Level Input Voltage
VIH
—
9
—
9
VIN=VDD , Strobe Active ,Pin12 @VDD
nA
12
12
12
12
12
9
100
100
-100
-100
-1.0
10
Input Leakage High
Input Leakage Low
IIH
—
nA
nA
nA
μA
μA
μA
μA
V
VIN=VDD
VIN=VST , Strobe Active ,Pin12 @VDD
—
—
IIL
VIN=VSS
—
0.25
20
VIN=VDD ( @ VDD =9V)
No Local Smoke ,VIN= VDD ( @VDD=9V)
No Local Smoke ,VIN=17V( @VDD=12V)
IO = 10mA
Input Pull-Down Current
IIN
9
80
—
7
12
6.5
6.5
6.5
140
0.6
1.0
—
—
11
8, 9
13
Low-Level Output Voltage
High-Level Output Voltage
—
VOL
V
IO = 16mA
—
V
IO = 5mA
—
—
VOH
VST
8, 9
4
6.5
5.5
V
IO = -16mA
—
—
Inactive , IO = -1μA
12 VDD-0.1
V
V
Strobe Output Voltage
Line Regulation
—
-60
—
Active , IO = 100μA to 500μA
9
VDD-5.6
—
VDD-4.4
—
ΔVST(ΔVDD)
VIRED
ΔVIRED(ΔVDD)
—
12
9
dB
V
Active , VDD=6V to 12V
Inactive , IO =1Μa , TA = +25℃
—
0.1
IRED Output Voltage
6
Active , IO = -6mA , TA = +25℃
2.25
—
3.0
-35
—
3.75
—
V
—
9
Line Regulation
High-Level Output Voltage
dB
Active , VDD=6V to 12V
—
IOH
7
-4.0
—
mA VDD= Alarm , I/O active , VO= VDD-2V
—
μA
μA
V
OFF Leakage Current High IOZ
OFF Leakage Current Low IOZ
11
11
12
12
—
—
—
1.0
VO= VDD
VO= VSS
—
—
-1.0
Low VDD Alarm Threshold
Common Mode Voltage
Smoke Comparator Ref. Volt.
6.5
7.2
—
7.8
VDD (
VIC
)
th
1, 2, 3
Int.
VDD-4
VDD-3.92
VDD-2
VDD-3.08
V
Any Alarm Condition
Any Alarm Condition
—
VREF
V
* Limits over the operating temperature range are based on characterization data.
Characteristics are production tested at +25℃.
Typical values are at +25℃and are given for circuit design information only.
7/10
2006-01-25
一華半導體股份有限公司
SMOKE DETECTOR
MOSDESIGN SEMICONDUCTOR CORP.
PHOTOELECTRIC SMOKE DETECTOR
WITH INTERCONNECT
M75010
AC ELECTRICAL CHARACTERISTICS
(TA=-25℃ ~ 75℃)
Characteristics
Oscillator Period
Sym.
TOSC
VDD
9
Min.
9.4
Typ.
10.5
—
Max.
11.5
48
Unit
Conditions
ms
s
TLED1
TLED2
TLED3
TW (LED)
TST1
9
39
No Local or Remote Smoke
Led Pulse Period
Led Pulse Width
—
—
9
None
0.45
9.5
s
Remote Smoke only
Local Smoke or Test
9
0.50
—
0.55
11.5
11.9
2.2
s
9
ms
s
—
9
9.6
No Local or Remote Smoke
After 1 or 3 Valid Samples
TST2
9
1.8
2.0
1.0
8.0
—
s
After 2 or 3 Valid Samples
and During Local Alarm
TST3
TST4
TST5
9
9
9
0.8
7.2
1.1
8.9
s
s
s
Strobe Pulse Period
Remote Alarm
Chamber Test or Low Supply Test ,
No Local Alarm
38.9
47.1
TST6
9
9
9
9
300
9.5
9.6
1.8
336
—
370
11.5
11.9
2.2
ms
ms
s
Pushbutton Test , No Alarm
Strobe Pulse Width
IRED Pulse Period
TW (ST)
TIRED1
TIRED2
—
No Local or Remote Smoke
After 1 or 3 Valid Samples
2.0
s
After 2 or 3 Valid Samples
and During Local Alarm
TIRED3
9
0.8
1.0
1.1
s
TIRED4
TIRED5
TIRED6
TW (IRED)
Tr(IRED)
9
9
9
9
7.2
38.9
300
94
8.0
—
8.9
47.1
370
116
30
s
Remote Alarm
s
Chamber Test , No Local Alarm
Pushbutton Test , No Alarm
336
—
ms
μs
μs
μs
IRED Pulse Width
IRED Rise Time
—
—
10% to 90%
—
—
IRED Fall Time
200
—
90% to 10%
Tf
(IRED)
—
I/O to Active Delay
9
9
9
0
s
s
s
Local Alarm
Td
(IO)
I/O Charge Dump Duration
Rising Edge on I/O to Alarm
0.9
1.0
—
1.1
End of Local Alarm or Test
No Local Alarm
Tdump
—
1.34
Tr
(IO)
Low Supply and Degraded
Chamber Sensitivity
—
—
Horn Warning Pulse Period
9
9
38.9
9.5
47.1
11.5
s
THORN
Low Supply and Degraded
Chamber Sensitivity
Horn Warning Pulse Width TW (HORN)
ms
—
—
Horn ON Time
Horn OFF Time
TON (HORN)
TOFF (HORN)
9
9
216
80
280
83
ms
ms
Local or Remote Alarm
Local or Remote Alarm
* Limits over the operating temperature range are based on characterization data.
Characteristics are production tested at +25℃.
Typical values are at +25℃and are given for circuit design information only.
8/10
2006-01-25
一華半導體股份有限公司
SMOKE DETECTOR
MOSDESIGN SEMICONDUCTOR CORP.
PHOTOELECTRIC SMOKE DETECTOR
WITH INTERCONNECT
M75010
ELECTRICAL CHARACTERISTICS
( 一 ) STAND-ALONE：
D1
VDD C4
PUSH
TO
TEST
R1
R3
9V
M75010P
R14
C1
TEST
C1
1
16
R2
C2
R5
TRIP
C2
DETECT
R6
VSS
R10
OSCR
R15
R9
C5
STROBE
VDD
OSCC
LED
R8
R4
IRED
I/O
R11
FEEDBACK
C6
C3
R7
8
9
HORN2
HORN1
R12
TO/FROM
OTHER
UNITS
R13
0.047μF
5.6KΩ
5KΩ
C1
R1
R2
C2 4700pF
100μF
22μF
8.2KΩ
1KΩ
C3
C4
R3
R4
560Ω
200KΩ
C5 1500pF
C6 1000pF
R5
R6
4.7Ω~22Ω
330Ω
R7
R8
7.5MΩ
100KΩ
200KΩ
2MΩ
R9
R10
R11
R12
R13
R14
R15
220Ω
100KΩ
47KΩ
1. Value for R11、R12 and C6 may differ depending on type of piezoelectric horn used.
2. C2 and R7 are used for coarse sensitivity adjustment. Typical values are shown.
3. C4 should be 22μF if B1 is a carbon battery. C4 could be reduced to 1μF when an alkaline battery is used.
9/10
2006-01-25
一華半導體股份有限公司
SMOKE DETECTOR
MOSDESIGN SEMICONDUCTOR CORP.
PHOTOELECTRIC SMOKE DETECTOR
M75010
WITH INTERCONNECT
( 二 ) NETWORK：
D1
VDD C4
R1
9V
M75010P
C1
TEST
C1
C2
1
16
R2
C2
R5
TRIP
VSS
DETECT
R6
R3
R9
C5
R8
STROBE
VDD
OSCR
OSCC
LED
R4
IRED
C3
FEEDBACK
I/O
R7
HORN1
HORN2
8
9
TO/FROM
OTHER
UNITS
R10
0.047μF
5.6KΩ
5KΩ
C1
R1
R2
R3
R4
R5
R6
R7
R8
R9
R10
C2 4700pF
100μF
22μF
8.2KΩ
1KΩ
C3
C4
560Ω
200KΩ
C5 1500pF
4.7Ω~22Ω
7.5MΩ
100KΩ
220Ω
1. C2 and R7 are used for coarse sensitivity adjustment. Typical values are shown.
2. C4 should be 22μF if B1 is a carbon battery. C4 could be reduced to 1μF when an alkaline battery is used.
3. FEEDBACK ( PIN10)、TRIP ( PIN15 ) and TEST ( PIN16 ) must connect to ground.
* All specs and applications shown above subject to change without prior notice.
(以上電路及規格僅供參考,本公司得逕行修正)
10/10
2006-01-25
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