M84B [ETC]
PIANO / MANDOLIN 1-KEY-1-NOTE; PIANO / MANDOLIN 1 - KEY- 1 -NOTE
| 型号： | M84B |
| 厂家： | 
ETC |
| 描述： | PIANO / MANDOLIN 1-KEY-1-NOTE |
| 文件： | 总3页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR20HxxCT, MBRF20HxxCT & MBRB20HxxCT Series
New Product
Vishay Semiconductors
formerly General Semiconductor
Dual Schottky Barrier Rectifier
Reverse Voltage 35 to 60V
Forward Current 20A
ITO-220AB (MBRF20HxxCT)
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
TO-220AB (MBR20HxxCT)
0.415 (10.54) MAX.
0.185 (4.70)
0.175 (4.44)
0.131 (3.39)
0.122 (3.08)
0.140 (3.56)
0.130 (3.30)
DIA.
DIA.
0.154 (3.91)
0.148 (3.74)
0.370 (9.40)
0.360 (9.14)
0.055 (1.39)
0.045 (1.14)
0.676 (17.2)
0.646 (16.4)
0.600 (15.5)
0.580 (14.5)
0.113 (2.87)
0.103 (2.62)
0.350 (8.89)
0.330 (8.38)
0.145 (3.68)
0.135 (3.43)
PIN
2
3
1
0.603 (15.32)
0.573 (14.55)
0.191 (4.85)
0.171 (4.35)
0.410 (10.41)
0.390 (9.91)
0.350 (8.89)
0.330 (8.38)
0.635 (16.13)
0.625 (15.87)
PIN
2
0.110 (2.80)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.060 (1.52)
PIN 1
1
3
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
PIN 2
0.110 (2.79)
0.100 (2.54)
PIN 3
0.560 (14.22)
0.037 (0.94)
0.027 (0.69)
PIN 1
PIN 3
PIN 2
CASE
0.530 (13.46)
0.022 (0.55)
0.014 (0.36)
0.105 (2.67)
0.095 (2.41)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.022 (0.56)
0.014 (0.36)
0.104 (2.65)
0.096 (2.45)
0.205 (5.20)
0.195 (4.95)
Mounting Pad Layout TO-263AB
0.42
(10.66)
TO-263AB (MBRB20HxxCT)
0.411 (10.45)
0.190 (4.83)
0.380 (9.65)
0.055 (1.40)
0.045 (1.14)
0.160 (4.06)
0.33
(8.38)
Dimensions in inches
and (millimeters)
0.245 (6.22)
MIN
0.63
(17.02)
K
0.055 (1.40)
0.047 (1.19)
0.360 (9.14)
0.320 (8.13)
0.624 (15.85)
0.591 (15.00)
K
1
0.08
2
(2.032)
0.12
(3.05)
0-0.01 (0-0.254)
0.24
0.110 (2.79)
0.090 (2.29)
(6.096)
0.037 (0.940)
0.027 (0.686)
0.021 (0.53)
0.014 (0.36)
PIN 1
PIN 2
K - HEATSINK
0.105 (2.67)
0.095 (2.41)
0.140 (3.56)
0.110 (2.79)
Features
0.205 (5.20)
0.195 (4.95)
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-0
• Dual rectifier construction, positive center tap
• Metal silicon junction, majority carrier conduction
• Low forward voltage drop, low power loss
and high efficiency
• Guardring for overvoltage protection
• For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
• Rated for reverse surge and ESD
Mechanical Data
Case: JEDEC TO-220AB, ITO-220AB & TO-263AB molded
plastic body
Terminals: Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity: As marked
Mounting Position: Any
Mounting Torque: 10 in-lbs maximum
Weight: 0.08 oz., 2.24 g
• 175 °C maximum operation junction temperature
Document Number 88787
4-Feb-03
www.vishay.com
1
MBR20HxxCT, MBRF20HxxCT & MBRB20HxxCT Series
Vishay Semiconductors
formerly General Semiconductor
Maximum Ratings (TC = 25 °C unless otherwise noted)
Parameter
Symbol MBR20H35CT MBR20H45CT MBR20H50CT MBR20H60CT
Unit
V
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VDC
35
35
35
45
45
45
50
50
50
60
60
60
V
V
Max.average forward rectified current
(see fig. 1)
Total device
Per leg
20
10
IF(AV)
IFRM
EAS
A
A
Peak repetitive forward current at TC = 150 °C per leg
(rated VR, 2.0KHz sq. wave)
20
80
Non-repetitive avalanche energy per leg
at 25 °C, IAS = 4 A, L = 10 mH
mJ
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC Method) per leg
IFSM
150
A
Peak repetitive reverse surge current per leg
at tp = 2.0 µs, 1 KHZ
IRRM
ERSM
VC
1.0
20
0.5
10
A
Peak non-repetitive reverse energy (8/20 µs waveform)
mJ
kV
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
25
Voltage rate of change (rated VR)
Operating junction temperature range
Storage temperature range
dv/dt
TJ
10,000
V/µs
°C
–65 to +175
TSTG
–65 to +175
°C
4500(1)
3500(2)
1500(3)
RMS Isolation voltage (MBRF type only) from terminals
to heatsink with t = 1.0 second, RH ≤ 30%
VISOL
V
Electrical Characteristics (TC = 25 °C unless otherwise noted)
MBR20H35CT, MBR20H45CT MBR20H50CT, MBR20H60CT
Parameter
Symbol
Unit
Typ
Max
Typ
Max
Maximum instantaneous
forward voltage per leg(4)
at IF = 10 A
at IF = 10 A
at IF = 20 A
at IF = 20 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ =125 °C
–
0.49
–
0.63
0.55
0.75
0.68
–
0.57
–
0.71
0.61
0.85
0.71
VF
V
0.62
0.68
Maximum instantaneous reverse current TJ = 25 °C
at rated DC blocking voltage per leg(4)
TJ =125 °C
–
4.0
100
12
–
2.0
100
12
µA
mA
IR
Thermal Characteristics (TC = 25 °C unless otherwise noted)
Parameter
Symbol
MBR
2.0
MBRF
MBRB
2.0
Unit
°C/W
Thermal resistance from junction to case per leg
RθJC
4.0
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is ≤ 4.9 mm (0.19”)
(4) Pulse test: 300µs pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR20H35CT – MBR20H60CT
MBRF20H35CT – MBRF20H60CT
TO-220AB
ITO-220AB
45
45
Anti-Static tube, 50/tube, 2K/carton
Anti-Static tube, 50/tube, 2K/carton
31
45
81
13” reel, 800/reel, 4.8K/carton
Anti-Static tube, 50/tube, 2K/carton
Anti-Static 13” reel, 800/reel, 4.8K/carton
MBRB20H35CT – MBRB20H60CT
TO-263AB
www.vishay.com
2
Document Number 88787
4-Feb-03
MBR20HxxCT, MBRF20HxxCT & MBRB20HxxCT Series
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves(TA = 25°C unless otherwise noted)
Fig. 2 – Maximum Non-Repetitive
Fig. 1 – Forward Current
Derating Curve
Peak Forward Surge Current Per Leg
25
175
150
125
100
75
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
MBR, MBRB
20
15
MBRF
10
5
50
25
0
0
25
75
100
125
150
175
50
1
10
100
Case Temperature (°C)
Number of Cycles at 60 HZ
Fig. 3 – Typical Instantaneous
Forward Characteristics Per Leg
Fig. 4 – Typical Reverse
Characteristics Per Leg
100
100
10
10
1
TJ = 150°C
TJ = 125°C
TJ = 150°C
TJ = 25°C
TJ = 125°C
0.1
1
0.1
0.01
0.001
0.0001
MBR20H35CT -- MBR20H45CT
MBR20H50CT -- MBR20H60CT
TJ = 25°C
MBR20H35CT -- MBR20H45CT
MBR20H50CT -- MBR20H60CT
0.01
0
20
40
60
80
100
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction
Capacitance Per Leg
Fig. 6 – Typical Transient
Thermal Impedance Per Leg
1000
100
10
10
TJ = 25°C
f = 1.0 MHZ
Vsig = 50mVp-p
MBR20H35CT -- MBR20H45CT
MBR20H50CT -- MBR20H60CT
1
0.1
0.1
1
10
100
0.01
0.1
1
10
Reverse Voltage (V)
t, Pulse Duration (sec.)
Document Number 88787
4-Feb-03
www.vishay.com
3
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