MAX2682EUT [ETC]
PLASTIC ENCAPSULATED DEVICES; 塑封器件
| 型号： | MAX2682EUT |
| 厂家： | 
ETC |
| 描述： | PLASTIC ENCAPSULATED DEVICES |
| 文件： | 总7页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MAX2682EUT
Rev. A
RELIABILITY REPORT
FOR
MAX2682EUT
PLASTIC ENCAPSULATED DEVICES
October 4, 2002
MAXIM INTEGRATED PRODUCTS
120 SAN GABRIEL DR.
SUNNYVALE, CA 94086
Written by
Reviewed by
Jim Pedicord
Quality Assurance
Reliability Lab Manager
Bryan J. Preeshl
Quality Assurance
Executive Director
Conclusion
The MAX2682 successfully meets the quality and reliability standards required of all Maxim products. In addition,
Maxim’s continuous reliability monitoring program ensures that all outgoing product will continue to meet Maxim’s quality
and reliability standards.
Table of Contents
I. ........Device Description
II. ........Manufacturing Information
III. .......Packaging Information
IV. .......Die Information
V. ........Quality Assurance Information
VI. .......Reliability Evaluation
......Attachments
I. Device Description
A. General
The MAX2682 miniature, low-cost, low-noise downconverter mixer is designed for low-voltage operation and is ideal
for use in portable communications equipment. Signals at the RF input port are mixed with signals at the local
oscillator (LO) port using a double-balanced mixer. This downconverter mixer operates with RF input frequencies
between 400MHz and 2500MHz, and downconvert to IF output frequencies between 10MHz and 500MHz.
The MAX2682 operates from a single +2.7V to +5.5V supply, allowing it to be powered directly from a 3-cell NiCd or
a 1-cell Lithium battery. This device offers a wide range of supply currents and input intercept (IIP3) levels to optimize
system performance. Additionally, this device features a low-power shutdown mode in which it typically draws less
than 0.1µA of supply current. Consult the Selector Guide for various combinations of IIP3 and supply current.
The MAX2682 is manufactured on a high-frequency, low-noise, advanced silicon-germanium process and is offered in
the space-saving 6-pin SOT23 package.
B. Absolute Maximum Ratings
Item
Rating
VCC to GND
-0.3V to +6.0V
RFIN Input Power (50½ Source)
LO Input Power (50½ Source)
SHDN, IFOUT, RFIN to GND
LO to GND
+10dBm
+10dBm
-0.3V to (VCC + 0.3V)
(VCC - 1V) to (VCC + 0.3V)
Continuous Power Dissipation (TA = +70°C)
SOT23-6 (derate 8.7mW/°C above +70°C)
Operating Temperature Range
Junction Temperature
696mW
-40°C to +85°C
+150°C
Storage Temperature Range
Lead Temperature (soldering, 10sec)
-65°C to +160°C
+300°
II. Manufacturing Information
A. Description/Function:
B. Process:
400MHz to 2.5GHz, Low-Noise, SiGe Downconverter Mixers
GST33
C. Number of Device Transistors:
83
D. Fabrication Location:
E. Assembly Location:
F. Date of Initial Production:
Oregon, USA
Malaysia or Thailand
October, 1998
III. Packaging Information
A. Package Type:
B. Lead Frame:
6-Pin SOT
Copper
C. Lead Finish:
Solder Plate
D. Die Attach:
Silver-filled Epoxy
Gold (1.0 mil dia.)
Epoxy with silica filler
Buildsheet # 05-7001-0322
Class UL94-V0
E. Bondwire:
F. Mold Material:
G. Assembly Diagram:
H. Flammability Rating:
I. Classification of Moisture Sensitivity per
JEDEC standard JESD22-A112:
Level 1
IV. Die Information
A. Dimensions:
36 x 33 mils
B. Passivation:
Si3N4/SiO2 (Silicon nitride/ Silicon dioxide)
C. Interconnect:
Poly / Au
D. Backside Metallization:
E. Minimum Metal Width:
F. Minimum Metal Spacing:
G. Bondpad Dimensions:
H. Isolation Dielectric:
I. Die Separation Method:
None
Metal1: 1.2; Metal2: 1.2; Metal3: 2.8; Metal4: 5.6 microns (as drawn)
Metal1: 1.3; Metal2: 1.4; Metal3: 2.6; Metal4: 2.6 microns (as drawn)
5 mil. Sq.
SiO2
Wafer Saw
V. Quality Assurance Information
A. Quality Assurance Contacts: Jim Pedicord
Bryan Preeshl
(Reliability Lab Manager)
(Executive Director of QA)
Kenneth Huening (Vice President)
B. Outgoing Inspection Level: 0.1% for all electrical parameters guaranteed by the Datasheet.
0.1% For all Visual Defects.
C. Observed Outgoing Defect Rate: < 50 ppm
D. Sampling Plan: Mil-Std-105D
VI. Reliability Evaluation
A. Accelerated Life Test
The results of the 150°C biased (static) life test are shown in Table 1. Using these results, the Failure
Rate (l ) is calculated as follows:
l =
1
=
1.83
(Chi square value for MTTF upper limit)
MTTF
192 x 9823 x 45 x 2
Temperature Acceleration factor assuming an activation energy of 0.8eV
l = 10.78 x 10-8
l = 10.78 F.I.T. (60% confidence level @ 25°C)
This low failure rate represents data collected from Maxim’s reliability qualification and monitor programs.
Maxim also performs weekly Burn-In on samples from production to assure reliability of its processes. The
reliability required for lots which receive a burn-in qualification is 59 F.I.T. at a 60% confidence level, which equates
to 3 failures in an 80 piece sample. Maxim performs failure analysis on rejects from lots exceeding this level. The
aBurn-In Schematic shows the static circuit used for this test. Maxim also performs 1000 hour life test monitors
quarterly for each process. This data is published in the Product Reliability Report (RR-1M).
B. Moisture Resistance Tests
Maxim evaluates pressure pot stress from every assembly process during qualification of each new design.
Pressure Pot testing must pass a 20% LTPD for acceptance. Additionally, industry standard 85°C/85%RH or
HAST tests are performed quarterly per device/package family.
C. E.S.D. and Latch-Up Testing
The WR22-2 die type has been found to have all pins able to withstand a transient pulse of <250V, per Mil-
Std-883 Method 3015 (reference attached ESD Test Circuit). Latch-Up testing has shown that this device
withstands a current of ±50mA.
Table 1
Reliability Evaluation Test Results
MAX2682EUT
TEST ITEM
TEST CONDITION
FAILURE
IDENTIFICATION
SAMPLE
SIZE
NUMBER OF
FAILURES
Static Life Test (Note 1)
Ta = 135°C
Biased
DC Parameters
& functionality
45
0
Time = 192 hrs.
Moisture Testing (Note 2)
Pressure Pot
Ta = 121°C
P = 15 psi.
RH= 100%
Time = 168hrs.
DC Parameters
& functionality
77
77
0
0
85/85
Ta = 85°C
RH = 85%
Biased
DC Parameters
& functionality
Time = 1000hrs.
Mechanical Stress (Note 2)
Temperature
Cycle
-65°C/150°C
1000 Cycles
Method 1010
DC Parameters
77
0
Note 1: Life Test Data may represent plastic D.I.P. qualification lots.
Note 2: Generic process/package data.
Attachment #1
TABLE II. Pin combination to be tested. 1/ 2/
Terminal A
Terminal B
(The common combination
of all like-named pins
(Each pin individually
connected to terminal A
with the other floating)
connected to terminal B)
All pins except VPS1 3/
All input and output pins
All VPS1 pins
1.
2.
All other input-output pins
1/ Table II is restated in narrative form in 3.4 below.
2/ No connects are not to be tested.
3/ Repeat pin combination I for each named Power supply and for ground
(e.g., where VPS1 is VDD, VCC, VSS, VBB, GND, +VS, -VS, VREF, etc).
3.4
a.
Pin combinations to be tested.
Each pin individually connected to terminal A with respect to the device ground pin(s) connected
to terminal B. All pins except the one being tested and the ground pin(s) shall be open.
b.
Each pin individually connected to terminal A with respect to each different set of a combination
of all named power supply pins (e.g., VSS1, or V
or V
or VCC1, or VCC2) connected to
SS2
SS3
terminal B. All pins except the one being tested and the power supply pin or set of pins shall be
open.
c.
Each input and each output individually connected to terminal A with respect to a combination of
all the other input and output pins connected to terminal B. All pins except the input or output pin
being tested and the combination of all the other input and output pins shall be open.
TERMINAL C
R2
R1
S1
TERMINAL A
REGULATED
HIGH VOLTAGE
SUPPLY
DUT
S2
SHORT
SOCKET
C1
CURRENT
PROBE
(NOTE 6)
TERMINAL B
R = 1.5kW
C = 100pf
TERMINAL D
Mil Std 883D
Method 3015.7
Notice 8
相关型号：
©2020 ICPDF网 联系我们和版权申明