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MSFC130-08 [ETC]

Thyristor/Diode Modules;
MSFC130-08
型号： MSFC130-08
厂家： ETC    ETC
描述：

Thyristor/Diode Modules
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MSFC130  
Thyristor/Diode Modules  
VRRM / VDRM  
IFAV / ITAV  
800 to 1600V  
130Amp  
Applications  
y
y
y
y
Power Converters  
Lighting Control  
DC Motor Control and Drives  
Heat and temperature control  
Circuit  
Features  
y
y
y
y
y
International standard package  
High Surge Capability  
Glass passivated chip  
Simple Mounting  
Heat transfer through aluminum oxide  
DBCceramic isolated metal baseplate  
UL E243882 approved  
y
Module Type  
TYPE  
VRRM/VDRM  
VRSM  
MSFC130-08  
MSFC130-12  
MSFC130-16  
800V  
1200V  
1600V  
900V  
1300V  
1700V  
◆Diode  
Maximum Ratings  
Symbol  
Item  
Conditions  
Values  
Units  
A
ID  
IFSM  
i2t  
Output Current(D.C.)  
Tc=85℃  
130  
Surge forward current  
t=10mS Tvj =45℃  
4700  
A
A2s  
Circuit Fusing Consideration  
Isolation Breakdown Voltage(R.M.S)  
Operating Junction Temperature  
Storage Temperature  
110000  
3000  
Visol  
Tvj  
a.c.50HZ;r.m.s.;1min  
V
-40 to +125  
-40 to +125  
3±15%  
5±15%  
165  
℃
Tstg  
Mt  
℃
Mounting Torque  
To terminals(M6)  
To heatsink(M6)  
Nm  
Nm  
g
Ms  
Weight  
Module（Approximately）  
Thermal Characteristics  
Symbol  
Rth(j-c)  
Item  
Conditions  
Junction to Case  
Values  
0.09  
Units  
℃/W  
Thermal Impedance, max.  
Rth(c-s) Thermal Impedance, max.  
Case to Heatsink  
0.05  
℃/W  
Electrical Characteristics  
Values  
Min. Typ.  
Symbol  
VFM  
Item  
Conditions  
Units  
Max.  
1.80  
Forward Voltage Drop, max.  
V
T=25℃ IF =500A  
Tvj =25℃ VRD=VRRM  
Tvj =125℃ VRD=VRRM  
Repetitive Peak Reverse Current,  
max.  
≤0.5  
≤9  
mA  
mA  
IRRM  
Document Number: MSFC130  
Dec.20, 2010  
www.smsemi.com  
1
MSFC130  
◆Thyristor  
Maximum Ratings  
Symbol  
Item  
Conditions  
Values  
Units  
ITAV  
Average On-State Current  
Sine 180o;Tc=85℃  
130  
A
TVJ =45℃ t=10ms, sine  
TVJ =125℃ t=10ms, sine  
4700  
4000  
ITSM  
Surge On-State Current  
A
TVJ =45℃ t=10ms, sine  
TVJ =125℃ t=10ms, sine  
110000  
80000  
i2t  
Circuit Fusing Consideration  
A2s  
Visol  
Tvj  
Isolation Breakdown Voltage(R.M.S) a.c.50HZ;r.m.s.;1min  
Operating Junction Temperature  
3000  
V
-40 to +130  
-40 to +125  
3±15%  
℃
Tstg  
Mt  
Storage Temperature  
℃
Mounting Torque  
To terminals(M6)  
To heatsink(M6)  
Nm  
Nm  
Ms  
5±15%  
Critical Rate of Rise of On-State  
Current  
TVJ= TVJM , 2/3VDRM ,IG =500mA  
Tr<0.5us,tp>6us  
di/dt  
200  
A/us  
Critical Rate of Rise of Off-State  
Voltage, min.  
dv/dt  
a
TJ=TVJM ,2/3VDRM linear voltage rise  
1000  
50  
V/us  
m/s2  
Maximum allowable acceleration  
Thermal Characteristics  
Symbol  
Rth(j-c)  
Item  
Conditions  
Junction to Case  
Values  
0.18  
Units  
℃/W  
Thermal Impedance, max.  
Rth(c-s)  
Thermal Impedance, max.  
Case to Heatsink  
0.10  
℃/W  
Electrical Characteristics  
Values  
Min. Typ. Max.  
Symbol  
Item  
Conditions  
Units  
VTM  
Peak On-State Voltage, max.  
T=25℃ IT =500A  
1.8  
V
Repetitive Peak Reverse Current,  
max. / Repetitive Peak Off-State  
Current, max.  
TVJ=TVJM ,VR=VRRM ,VD=  
VDRM  
IRRM/IDRM  
40  
mA  
For power-loss  
calculations only  
(TVJ =125℃)  
VTO  
On state threshold voltage  
1
V
Value of on-state  
slope resistance. max  
rT  
TVJ =TVJM  
1.6  
mΩ  
VGT  
IGT  
VGD  
IGD  
IL  
Gate Trigger Voltage, max.  
Gate Trigger Current, max.  
Non-triggering gate voltage, max.  
Non-triggering gate current, max.  
Latching current, max.  
TVJ =25℃ , VD =6V  
3
V
TVJ =25℃ , VD =6V  
150  
0.25  
10  
mA  
V
TVJ=125℃,VD =2/3VDRM  
TVJ =125℃, VD =2/3VDRM  
TVJ =25℃ , RG = 33 Ω  
TVJ =25℃ , VD =6V  
mA  
mA  
mA  
300  
150  
1000  
400  
IH  
Holding current, max.  
TVJ=25℃,  
IG=1A, diG/dt=1A/us  
tgd  
tq  
Gate controlled delay time  
1
us  
us  
Circuit commutated turn-off time  
TVJ =TVJM  
100  
Document Number: MSFC130  
Dec.20, 2010  
www.smsemi.com  
2
MSFC130  
Performance Curves  
250  
W
250  
sin.180  
A
rec.120  
DC  
DC  
200  
200  
rec.60  
150  
100  
50  
150  
rec.30  
sin.180  
rec.120  
100  
50  
rec.60  
rec.30  
PTAV  
0
ITAVM  
0
0
ITAV  
50  
100  
150  
A 200  
0
Tc  
50  
100  
℃ 130  
Fig1. Power dissipation  
Fig2.Forward Current Derating Curve  
6000  
A
0.30  
50HZ  
Zth(j-S)  
Zth(j-C)  
℃/ W  
0.15  
3000  
0
0
0.001  
t
0.01  
0.1  
1
10  
S
100  
10  
100  
ms 1000  
Fig3. Transient thermal impedance  
Fig4. Max Non-Repetitive Forward Surge  
Current  
600  
A
Typ.  
400  
max.  
200  
25℃  
IT  
0
- - -125℃  
0
VTM  
0.5  
1.0  
1.5  
V
2.0  
Fig5. Forward Characteristics  
Document Number: MSFC130  
Dec.20, 2010  
www.smsemi.com  
3
MSFC130  
100  
V
1/2·MSFC130  
20V;20Ω  
10  
1
VGT  
∧
PG(tp)  
-40℃  
25℃  
Tvj  
125℃  
VGD125  
℃
IGT  
VG  
IGD125  
℃
0.1  
0.001 IG  
0.01  
0.1  
1
10  
A 100  
Fig6. Gate trigger Characteristics  
Package Outline Information  
CASE: F2  
×
Dimensions in mm  
Document Number: MSFC130  
Dec.20, 2010  
www.smsemi.com  
4

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