MT4953 [ETC]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | MT4953 |
| 厂家： | 
ETC |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总4页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MT
Mos-tech Semiconductor Corp
MT4953
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
PRODUCT SUMMARY
● Super high dense cell design for low RDS(ON)
RDS(ON) (mΩ) Typ
46@ VGS=-10V
78 @ VGS=-4.5V
VDSS
ID
● Rugged and reliable
● Simple drive requirement
● SOP-8 package
-30V
-5.3A
NOTE：The MT4953 is available
in a lead-free package
ABSOLUTE MAXIUM RATINGS（TA=25℃ unless otherwise noted）
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
-30
V
Gate-Source Voltage
VGS
ID
±20
-5.3
V
A
Drain Current-Continuousª@Tj=125℃
- Pulse db
IDM
-24
A
Drain-source Diode Forward Currentª
Maximum Power Dissipationª
Operating Junction and Storage
Temperature Range
IS
-1.7
2.5
A
PD
W
TJ,TSTG
-55 to 150
℃
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª
Rth JA
50
℃/W
http//www.mtsemi.com
1
MT4953
ELECTRICAL CHARACTERISTICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min Typ Max Unit
OFF CHARACTERISTICS
BVDSS
IDSS
Drain-Source Breakdown Voltage
VGS=0V,ID=-250µA
-30
V
Zero Gate Voltage Drain Current
Gate-Body Leakage
VDS=-24V,VGS=0V
VGS=±20V,VDS=0V
-1
µA
IGSS
±100
nA
ON CHARACTERITICS
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250µA
VGS=-10V,ID=-5.6A
VGS=-4.5V,ID=-4.2A
VGS=-5V,ID=-5.6A
-1
-1.5
46
78
5
-2.5
55
V
mΩ
S
Drain-Source On-State Resistance
RDS(ON)
85
ɡFS
Forward Transconductance
DAYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
582
125
86
pF
pF
pF
VDS=-15V,VGS=0V
f=1.0MHZ
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISISTICS
Turn-On Delay Time
Rise Time
tD(ON)
tr
tD(OFF)
tf
9
10
ns
ns
VDD=-15V
ID=-5.3A,
VGEN=-4.5V
RL=10ohm
RGEN=10ohm
Turn-Off Delay Time
Fall Time
38
ns
23
ns
Qɡ
Total Gate Charge
11.7
2.1
2.9
nC
nC
nC
VDS=-15V,ID=-1A
VGS=-10V
Qɡs
Qɡd
Gate-Source Charge
Gate-Drain Charge
http//www.mtsemi.com
2
MT4953
ELECTRICAL CHARACTERICS (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ Max Unit
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode Forward Voltage
VSD
VGS=0V,IS=-1.7A
-0.84
-1.2
V
Notes
a. Surface Mounted on FR4 Board, t≦10sec
b. Pulse Test: Pulse Width≦300Us, Duty≦2%
c. Guaranteed by design, not subject to production testing.
- VDS, Drain-to-Source Voltage (V)
Figure 1.Output Characteristics
-VGS, Gate-to-source Voltage (V)
Figure 2.Transfer Characteristics
VGS=-10V
ID=-5.6A
- VGS, Drain-to Source Voltage
Figure3.Capacitance
Figure4. On-Resistance Variation with
Temperature
http//www.mtsemi.com
3
MT4953
1.3
1.2
1.1
1.0
0.9
0.8
0.7
1.15
1.10
1.05
1.00
0.95
0.90
0.85
VDS=VGS
ID=-250uA
ID=-250uA
0.6
--50 -25
0
25 50 75 100 125
--50 -25
0
25 50 75 100 125
Tj, .Junction Temperature (℃)
Tj,. Junction Temperature(℃)
Figure5.Gate Threshold Variation
With Temperature
Figure6.Breakdown Voltage Variation
With Temperature
10
20
10
8
6
4
2
0
Tj=25℃
VGS=-15V
1.0
0
5
10
15
20
0.4
0.6
0.7
0.9
1.1
1.3
-VSD, Body Diode Forward Voltage
Figure8.Body Diode Forward Voltage
Variation with Source Current
-IDS, Drain-Source Current (A)
Figure7.Transconductance Variation
With Drain Current
50
10
10
8
VDS=-10V
ID=-5.3A
1
6
4
0.1
2
0.03
0
0.1
1
10 30
50
0
2
4
6
8
10
12 14
Qɡ, Total Gate Charge(nC)
-VDS, Drain-Source Voltage(V)
Figure9. Gate Charge
Figure10.Maximum Safe Operating Area
http//www.mtsemi.com
4
相关型号：
©2020 ICPDF网 联系我们和版权申明