N04L163WC1C [ETC]
4Mb Ultra-Low Power Asynchronous CMOS SRAM; 4Mb的超低功耗异步SRAM CMOS
| 型号： | N04L163WC1C |
| 厂家： | 
ETC |
| 描述： | 4Mb Ultra-Low Power Asynchronous CMOS SRAM |
| 文件： | 总10页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NanoAmp Solutions, Inc.
1982 Zanker Road, San Jose, CA 95112
ph: 408-573-8878, FAX: 408-573-8877
www.nanoamp.com
N04L163WC1C
Advance Information
4Mb Ultra-Low Power Asynchronous CMOS SRAM
256K × 16 bit
Overview
Features
The N04L163WC1C is an integrated memory
device containing a 4 Mbit Static Random Access
Memory organized as 262,144 words by 16 bits.
The device is designed and fabricated using
NanoAmp’s advanced CMOS technology to
provide both high-speed performance and ultra-low
power. The device operates with a single chip
enable (CE) control and output enable (OE) to
allow for easy memory expansion. Byte controls
(UB and LB) allow the upper and lower bytes to be
accessed independently. The N04L163WC1C is
optimal for various applications where low-power is
critical such as battery backup and hand-held
devices. The device can operate over a very wide
• Single Wide Power Supply Range
2.2 to 3.6 Volts
• Very low standby current
2.0µA at 3.0V (Typical)
• Very low operating current
1.5mA at 3.0V and 1µs (Typical)
• Simple memory control
Single Chip Enable (CE)
Byte control for independent byte operation
Output Enable (OE) for memory expansion
• Low voltage data retention
Vcc = 1.5V
• Very fast output enable access time
o
o
temperature range of -40 C to +85 C and is
available in JEDEC standard packages compatible
with other standard 256Kb x 16 SRAMs.
25ns OE access time
• Automatic power down to standby mode
• TTL compatible three-state output driver
• Compact space saving BGA package avail-
able
• Ultra Low Power Sort Available
Product Family
Standby
Current
Operating
Current
Operating
Power
Speed
Part Number
Package Type
Temperature Supply (Vcc) Options
(ISB),Typical
(Icc), Typical
N04L163WC1CZ1
VFBGA Pb-Free
1.5 mA @
1MHz
-40oC to +85oC
2.2V - 3.6V
55ns
2 µA
N04L163WC1CT1 44-TSOP II Pb-Free
Pin Configurations
Pin Descriptions
1
2
3
A0
A3
4
5
A2
6
A4
1
PIN
A5
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A3
2
ONE
A6
Pin Name
A0-A17
Pin Function
A1
A4
A6
A7
A2
3
LB
OE
NC
A7
A
B
C
D
E
F
A1
4
OE
A0
5
Address Inputs
Write Enable Input
Chip Enable Input
UB
I/O8
I/O0
UB
CE
CE
6
LB
I/O0
I/O1
I/O2
I/O3
VCC
VSS
I/O4
I/O5
I/O6
I/O7
WE
A17
A16
A15
A14
A13
7
I/O15
I/O14
I/O13
I/O12
VSS
VCC
I/O11
I/O10
I/O9
I/O8
NC
WE
CE
OE
LB
UB
I/O9 I/O10 A5
VSS I/O11 A17
I/O1 I/O2
I/O3 VCC
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
Output Enable Input
Lower Byte Enable Input
Upper Byte Enable Input
Data Inputs/Outputs
VCC I/O12
A16 I/O4 VSS
A15 I/O5 I/O6
DNU
I/O14 I/O13 A14
I/O0-I/O15
I/O15
NC
A12
A9
A13
A10
I/O7
NC
NC
A8
WE
A11
G
H
A8
VCC
VSS
NC
Power
Ground
Not Connected
Do Not Use
A9
A10
A11
48 Pin VFBGA (top)
6 x 8 mm
A12
DNU
Stock No. 23373-C 1/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
1
N04L163WC1C
Advance Information
NanoAmp Solutions, Inc.
Functional Block Diagram
Word
Address
Inputs
Address
Decode
Logic
A0 - A3
Input/
Page
16K Page
x 16 word
x 16 bit
Address
Inputs
Output
Address
Decode
Logic
I/O0 - I/O7
Mux
A4 - A17
and
RAM Array
Buffers
I/O8 - I/O15
CE
WE
OE
UB
LB
Control
Logic
Functional Description
1
CE
WE
OE
UB
LB
MODE
POWER
I/O0 - I/O15
Standby2
Standby2
Write3
H
X
L
L
L
X
X
L
X
X
X3
X
H
L1
L1
L1
X
H
L1
L1
L1
High Z
High Z
Standby
Standby
Active
Data In
Data Out
High Z
H
H
L
Active
Read
Active
H
Active
1. When UB and LB are in select mode (low), I/O0 - I/O15 are affected as shown. When LB only is in the select mode only I/O0 - I/O7
are affected as shown. When UB is in the select mode only I/O8 - I/O15 are affected as shown.
2. When the device is in standby mode, control inputs (WE, OE, UB, and LB), address inputs and data input/outputs are internally
isolated from any external influence and disabled from exerting any influence externally.
3. When WE is invoked, the OE input is internally disabled and has no effect on the circuit.
1
Capacitance
Item
Symbol
CIN
Test Condition
Min
Max
10
Unit
pF
VIN = 0V, f = 1 MHz, TA = 25oC
VIN = 0V, f = 1 MHz, TA = 25oC
Input Capacitance
I/O Capacitance
CI/O
10
pF
1. These parameters are verified in device characterization and are not 100% tested
Stock No. 23373-C 1/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
2
N04L163WC1C
Advance Information
NanoAmp Solutions, Inc.
1
Absolute Maximum Ratings
Item
Symbol
VIN,OUT
VCC
Rating
–0.3 to VCC+0.3
–0.3 to 4.5
500
Unit
V
Voltage on any pin relative to VSS
Voltage on VCC Supply Relative to VSS
Power Dissipation
V
PD
mW
oC
oC
oC
TSTG
Storage Temperature
–65 to 150
TA
Operating Temperature
-40 to +85
260oC, 10sec
TSOLDER
Soldering Temperature and Time
1. Stresses greater than those listed above may cause permanent damage to the device. This is a stress rating only and functional
operation of the device at these or any other conditions above those indicated in the operating section of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Operating Characteristics (Over Specified Temperature Range)
Typ1
Item
Symbol
Test Conditions
Min.
Max Unit
VCC
VDR
Supply Voltage
2.2
1.5
1.8
3.0
3.6
V
V
Data Retention Voltage
Chip Disabled
Vcc = 2.2V to 2.7V
Vcc = 2.7V to 3.6V
VCC+0.3
VIH
VIL
Input High Voltage
Input Low Voltage
Output High Voltage
V
V
V
V
CC+0.3
2.2
-0.3
-0.3
2.0
Vcc = 2.2V to 2.7V
Vcc = 2.7V to 3.6V
IOH = -0.1mA, Vcc = 2.20V
0.6
0.8
VOH
I
OH = -1.0mA, Vcc = 2.70V
2.4
IOL = 0.1mA, Vcc = 2.20V
0.4
0.4
1
VOL
Output Low Voltage
V
I
OL = 2.1mA, Vcc = 2.70V
VIN = 0 to VCC
ILI
Input Leakage Current
Output Leakage Current
-1
-1
µA
µA
OE = VIH or Chip Disabled
VOUT = 0 to VCC
ILO
1
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
1.5
1.5
8
8
2.0
3.0
3.0
15.0
10.0
12
Read/Write Operating Supply Current
ICC1
ICC2
mA
mA
@ 1 µs Cycle Time2
-L
-L
VCC=3.6 V, VIN=VIH or VIL
Chip Enabled, IOUT = 0
Read/Write Operating Supply Current
@ fmax
VIN = VCC or 0V
Chip Disabled
ISB1
Maximum Standby Current
µA
µA
-L
-L
2.0
8
tA= 85oC, VCC = 3.6 V
9
6
Vcc = 1.5V, CE ≥ Vcc - 0.2V,
VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V
IDR
Maximum Data Retention Current
1. Typical values are measured at Vcc=Vcc Typ., TA=25°C and are not 100% tested.
2. This parameter is specified with the outputs disabled to avoid external loading effects. The user must add current required to drive
output capacitance expected in the actual system.
Stock No. 23373-C 1/05
3
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
N04L163WC1C
Advance Information
NanoAmp Solutions, Inc.
Timing Test Conditions
Item
0.1VCC to 0.9 VCC
Input Pulse Level
Input Rise and Fall Time
Input and Output Timing Reference Levels
Output Load
1V/ns
0.5 VCC
CL = 50pF
-40 to +85 oC
Operating Temperature
Timing
-55
Units
Item
Symbol
Min.
Max.
tRC
tAA
Read Cycle Time
Address Access Time
55
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
55
55
25
55
tCO
Chip Enable to Valid Output
Output Enable to Valid Output
Byte Select to Valid Output
tOE
tLB, tUB
tLZ
Chip Enable to Low-Z output
Output Enable to Low-Z Output
Byte Select to Low-Z Output
Chip Disable to High-Z Output
Output Disable to High-Z Output
Byte Select Disable to High-Z Output
Output Hold from Address Change
10
5
tOLZ
tLBZ, tUBZ
tHZ
10
0
20
20
20
tOHZ
0
tLBHZ, tUBHZ
tOH
0
10
tWC
tCW
Write Cycle Time
Chip Enable to End of Write
Address Valid to End of Write
Byte Select to End of Write
Write Pulse Width
55
40
40
40
40
0
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
tAW
tLBW, tUBW
tWP
tAS
Address Setup Time
tWR
Write Recovery Time
0
tWHZ
tDW
Write to High-Z Output
Data to Write Time Overlap
Data Hold from Write Time
End Write to Low-Z Output
20
25
0
tDH
tOW
10
ns
Note:
1. Full device AC operation assumes a 100us ramp time from 0 to Vcc(min) and 200us wait time after Vcc stablization.
2. Full device operation requires linear Vcc ramp from VDR to Vcc(min) ≥ 100us or stable at Vcc(min) ≥ 100us.
Stock No. 23373-C 1/05
4
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
N04L163WC1C
Advance Information
NanoAmp Solutions, Inc.
Timing of Read Cycle (CE = OE = V , WE = V )
IL
IH
t
RC
Address
t
AA
t
OH
Previous Data Valid
Data Valid
Data Out
Timing Waveform of Read Cycle (WE= V )
IH
t
RC
Address
t
AA
t
HZ
t
CO
CE
OE
t
LZ
t
OHZ
t
OE
t
OLZ
t
t
LB, UB
LB, UB
t
t
t
t
LBLZ, UBLZ
LBHZ, UBHZ
High-Z
Data Valid
Data Out
Stock No. 23373-C 1/05
5
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
N04L163WC1C
Advance Information
NanoAmp Solutions, Inc.
Timing Waveform of Write Cycle (WE control)
t
WC
Address
t
WR
t
AW
t
CW
CE
t
, t
LBW UBW
LB, UB
t
WP
t
AS
WE
t
t
DH
DW
High-Z
Data Valid
Data In
Data Out
t
WHZ
t
OW
High-Z
Timing Waveform of Write Cycle (CE Control)
t
WC
Address
CE
t
t
AW
WR
t
CW
t
AS
t
, t
LBW UBW
LB, UB
WE
t
WP
t
t
DH
DW
Data Valid
Data In
t
LZ
t
WHZ
High-Z
Data Out
Stock No. 23373-C 1/05
6
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
N04L163WC1C
Advance Information
NanoAmp Solutions, Inc.
Data Retention Characteristics
Parameter
Description
Condition
Min
Typ
Max
Unit
VDR
Vcc for Data Retention
1.5
V
9
6
Vcc = 1.5V, CE ≥ Vcc - 0.2V,
VIN ≥ Vcc - 0.2V or VIN ≤ 0.2V
ICCDR
Data Retention Current
µA
-L
Chip Deselect to Data
Retention Time
Operation Recovery Time
tCDR
tR
0
ns
ns
tRC
Data Retention Waveform
Data Retention Mode
Vcc
Vcc(min)
Vcc(min)
VDR ≥ 1.5V
t
t
R
CDR
CE or
LB/UB
Stock No. 23373-C 1/05
7
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
N04L163WC1C
Advance Information
NanoAmp Solutions, Inc.
44 TSOP II Package (Z44)
18.571
18.313
11.938
11.735
10.262
10.058
0.80 BSC
0.40
0.30
SEE DETAIL B
DETAIL B
1.194
0.991
0.210
0.120
o
o
0 -5
0.150
0.050
0.597
0.406
Note:
1. All dimensions in inches (Millimeters)
Stock No. 23373-C 1/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
8
N04L163WC1C
Advance Information
NanoAmp Solutions, Inc.
VFBGA Package
0.23±0.05
1.00 MAX
D
A1 BALL PAD
CORNER (3)
1. 0.30±0.05 DIA.
E
2. SEATING PLANE - Z
0.15
Z
0.05
Z
TOP VIEW
SIDE VIEW
1. DIMENSION IS MEASURED AT THE
MAXIMUM SOLDER BALL DIAMETER.
PARALLEL TO PRIMARY Z.
A1 BALL PAD
CORNER
SD
2. PRIMARY DATUM Z AND SEATING
PLANE ARE DEFINED BY THE
SPHERICAL CROWNS OF THE
SOLDER BALLS.
e
SE
3. A1 BALL PAD CORNER I.D. TO BE
MARKED BY INK.
K TYP
J TYP
e
BOTTOM VIEW
Dimensions (mm)
e = 0.75
BALL
D
E
MATRIX
TYPE
SD
SE
J
K
6±0.10
8±0.10
0.375
0.375
1.125
1.375
FULL
Stock No. 23373-C 1/05
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
9
N04L163WC1C
Advance Information
NanoAmp Solutions, Inc.
Ordering Information
N04L163WC1CX-XX I L
L = Ultra Low Power Sort
I = Industrial Temp -40 to 85oC
55 = 55ns
Performance
T1 = 44-pin TSOP II Pb-Free Package
Z1 = 48-ball VFBGA Pb-Free Package
Package Type
Revision History
Revision #
Date
Change Description
A
B
C
Oct 6. 2004
Nov 8. 2004
Jan 14. 2005
Initial Preliminary Release
General Update
General Update
© 2001 - 2002 Nanoamp Solutions, Inc. All rights reserved.
NanoAmp Solutions, Inc. ("NanoAmp") reserves the right to change or modify the information contained in this data sheet and the products described therein, without prior notice.
NanoAmp does not convey any license under its patent rights nor the rights of others. Charts, drawings and schedules contained in this data sheet are provided for illustration pur-
poses only and they vary depending upon specific applications.
NanoAmp makes no warranty or guarantee regarding suitability of these products for any particular purpose, nor does NanoAmp assume any liability arising out of the application
or use of any product or circuit described herein. NanoAmp does not authorize use of its products as critical components in any application in which the failure of the NanoAmp
product may be expected to result in significant injury or death, including life support systems and critical medical instruments.
Stock No. 23373-C 1/05
10
The specifications of this device are subject to change without notice. For latest documentation see http://www.nanoamp.com.
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